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UFB200CB40P

UFB200CB40P

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    UFB200CB40P - Not Insulated SOT-227 Power Module - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
UFB200CB40P 数据手册
UFB200CB40P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial SMPS applications SOT-227 • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink Anode 1 2 3 Anode 4 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION Base common cathode PRODUCT SUMMARY VR IF(AV) at TC = 146 °C per module (1) trr Note (1) All 4 anode terminals connected 400 V 200 A 89 ns The UFB200CB40P not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module Operating junction and storage temperatures SYMBOL VR IF (1) TEST CONDITIONS MAX. 400 UNITS V A W °C TC = 140 °C TC = 25 °C TC = 140 °C 142 1300 368 - 55 to 175 IFSM (2) PD TJ, TStg Notes (1) Both anode terminals connected; Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6 (2) 10 ms sine or 6 ms rectangular pulse Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 UFB200CB40P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 100 A Forward voltage VFM IF = 100 A, TJ = 125 °C IF = 200 A IF = 200 A, TJ = 125 °C Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 175 °C, VR = VR rated VR = 400 V TEST CONDITIONS MIN. 400 TYP. 1.11 0.99 1.3 1.22 100 MAX. 1.34 1.1 1.6 1.4 50 4 µA mA pF V UNITS DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 400 A/µs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 5 0 A dIF/dt = 200 A/µs VR = 100 V MIN. TYP. 39 89 184 9 20 400 1840 MAX. 136 235 12 25 815 2940 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink, per module Weight Mounting torque SYMBOL RthJC RthCS Flat, greased surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.19 0.095 g Nm °C/W UNITS www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94276 Revision: 16-Jul-09 UFB200CB40P Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A IF - Instantaneous Forward Current (A) 1000 1000 Vishay High Power Products IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 TJ = 175 °C TJ = 125 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 300 350 400 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 UFB200CB40P Vishay High Power Products 180 Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A 250 230 210 VR = 100 V IF = 50 A TJ = 125 °C Allowable Case Temperature (°C) 160 140 120 100 80 60 40 20 0 0 40 80 120 160 200 240 280 320 360 400 See note (1) Square wave (D = 0.50) 80 % rated VR applied DC 190 trr (ns) 170 150 130 110 90 70 50 100 1000 TJ = 25 °C IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 350 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 4000 3500 3000 VR = 100 V IF = 50 A TJ = 125 °C Average Power Loss (W) 300 250 200 RMS limit 150 100 DC 50 0 0 20 40 60 80 100 120 140 160 180 200 220 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Qrr (nC) 2500 2000 1500 1000 500 0 100 TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt 50 VR = 100 V IF = 50 A 40 TJ = 125 °C IRR (A) 30 20 TJ = 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94276 Revision: 16-Jul-09 UFB200CB40P Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A VR = 200 V Vishay High Power Products 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 UFB200CB40P Vishay High Power Products ORDERING INFORMATION TABLE Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A Device code UF 1 B 2 200 3 C 4 B 5 40 6 P 7 1 2 3 4 5 6 7 - Ultrafast rectifier Ultrafast Pt diffused Current rating (200 = 200 A) Circuit configuration (2 common cathode diodes) Package indicator (SOT-227 standard not insulated) Voltage rating (40 = 400 V) P = Lead (Pb)-free Quantity per tube is 10 pcs, M4 screw and washer included LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94276 Revision: 16-Jul-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
UFB200CB40P
物料型号:ATMEGA128L8-AU

器件简介:ATMEGA128L8-AU 是一款低功耗、高性能的8位AVR 微控制器,采用Atmel 高度集成的增强RISC 架构。

引脚分配:该芯片共有100个引脚,包括电源引脚、地引脚、复位引脚、I/O引脚等。

参数特性:工作电压为1.8V至5.5V,最大工作频率为16MHz,内置128KB的系统内可编程Flash。

功能详解:ATMEGA128L8-AU 具有多个通信接口,包括SPI、UART、TWI等,支持多种外设操作和数据处理功能。

应用信息:适用于需要高性能处理和丰富外设接口的应用场合,如工业控制、医疗设备和智能家居等。
UFB200CB40P 价格&库存

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