UFB200CB40P
Vishay High Power Products
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
FEATURES
• Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial SMPS applications
SOT-227
• Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink
Anode 1 2 3
Anode 4
• Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
DESCRIPTION
Base common cathode
PRODUCT SUMMARY
VR IF(AV) at TC = 146 °C per module (1) trr Note (1) All 4 anode terminals connected 400 V 200 A 89 ns
The UFB200CB40P not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module Operating junction and storage temperatures SYMBOL VR IF
(1)
TEST CONDITIONS
MAX. 400
UNITS V A W °C
TC = 140 °C TC = 25 °C TC = 140 °C
142 1300 368 - 55 to 175
IFSM (2) PD TJ, TStg
Notes (1) Both anode terminals connected; Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6 (2) 10 ms sine or 6 ms rectangular pulse
Document Number: 94276 Revision: 16-Jul-09
For technical questions, contact: indmodules@vishay.com
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UFB200CB40P
Vishay High Power Products
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 100 A Forward voltage VFM IF = 100 A, TJ = 125 °C IF = 200 A IF = 200 A, TJ = 125 °C Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 175 °C, VR = VR rated VR = 400 V TEST CONDITIONS MIN. 400 TYP. 1.11 0.99 1.3 1.22 100 MAX. 1.34 1.1 1.6 1.4 50 4 µA mA pF V UNITS
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 400 A/µs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 5 0 A dIF/dt = 200 A/µs VR = 100 V MIN. TYP. 39 89 184 9 20 400 1840 MAX. 136 235 12 25 815 2940 A ns UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink, per module Weight Mounting torque SYMBOL RthJC RthCS Flat, greased surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.19 0.095 g Nm °C/W UNITS
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For technical questions, contact: indmodules@vishay.com
Document Number: 94276 Revision: 16-Jul-09
UFB200CB40P
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
IF - Instantaneous Forward Current (A)
1000 1000
Vishay High Power Products
IR - Reverse Current (µA)
100 10 1 0.1 0.01 0.001
TJ = 175 °C TJ = 125 °C
100
10
TJ = 175 °C TJ = 125 °C TJ = 25 °C
TJ = 25 °C
1 0 0.5 1.0 1.5 2.0 2.5
0
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
CT - Junction Capacitance (pF)
TJ = 25 °C
100
10 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Single pulse (thermal resistance) 0.01 0.0001 0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94276 Revision: 16-Jul-09
For technical questions, contact: indmodules@vishay.com
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UFB200CB40P
Vishay High Power Products
180
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
250 230 210 VR = 100 V IF = 50 A TJ = 125 °C
Allowable Case Temperature (°C)
160 140 120 100 80 60 40 20 0 0 40 80 120 160 200 240 280 320 360 400 See note (1) Square wave (D = 0.50) 80 % rated VR applied DC
190
trr (ns)
170 150 130 110 90 70 50 100 1000 TJ = 25 °C
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg)
350
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4000 3500 3000 VR = 100 V IF = 50 A TJ = 125 °C
Average Power Loss (W)
300 250 200 RMS limit 150 100 DC 50 0 0 20 40 60 80 100 120 140 160 180 200 220 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
Qrr (nC)
2500 2000 1500 1000 500 0 100 TJ = 25 °C
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
dIF/dt (A/µs)
Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt
50 VR = 100 V IF = 50 A 40 TJ = 125 °C
IRR (A)
30
20
TJ = 25 °C
10
0 100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94276 Revision: 16-Jul-09
UFB200CB40P
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
VR = 200 V
Vishay High Power Products
0.01 Ω L = 70 µH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Document Number: 94276 Revision: 16-Jul-09
For technical questions, contact: indmodules@vishay.com
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UFB200CB40P
Vishay High Power Products
ORDERING INFORMATION TABLE
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
Device code
UF
1
B
2
200
3
C
4
B
5
40
6
P
7
1 2 3 4 5 6 7
-
Ultrafast rectifier Ultrafast Pt diffused Current rating (200 = 200 A) Circuit configuration (2 common cathode diodes) Package indicator (SOT-227 standard not insulated) Voltage rating (40 = 400 V) P = Lead (Pb)-free
Quantity per tube is 10 pcs, M4 screw and washer included
LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037
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For technical questions, contact: indmodules@vishay.com
Document Number: 94276 Revision: 16-Jul-09
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Document Number: 91000 Revision: 11-Mar-11
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