UFH60GA60P

UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial SMPS applications SOT-227 • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY VR IF(AV) per module at TC = 126 °C trr 600 V 60 A 39 ns The UFH60GA60P insulated modules integrate two state of the art Vishay hyperfast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness, and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be a predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, and dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 85 °C TC = 25 °C TC = 85 °C Any terminal to case, t = 1 min TEST CONDITIONS MAX. 600 56 200 230 2500 - 55 to 175 UNITS V A W V °C Document Number: 94663 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 30 A Forward voltage VFM IF = 60 A IF = 30 A IF = 60 A Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 175 °C, VR = VR rated VR = 600 V TJ = 125 °C TEST CONDITIONS MIN. 600 TYP. 2.08 2.36 1.79 2.1 0.03 0.1 33 MAX. 3.8 4.78 1.92 2.42 75 1.0 μA mA pF V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V TEST CONDITIONS MIN. TYP. 39 66 3 7 58 235 MAX. 80 110 7 11 280 605 UNITS ns Peak recovery current A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink per module Weight Mounting torque SYMBOL TEST CONDITIONS MIN. RthJC RthCS Flat, greased surface 0.05 30 1.3 0.39 g N·m TYP. MAX. 0.78 °C/W UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94663 Revision: 22-Jul-10 UFH60GA60P Tandem Insulated SOT-227 Vishay Semiconductors Power Module Hyperfast Rectifier, 60 A IF - Instantaneous Forward Current (A) 1000 1000 TJ = 175 °C IR - Reverse Current (µA) 100 10 TJ = 125 °C 1 0.1 0.01 0.001 100 TJ = 25 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 200 300 400 500 600 94663_01 VF - Forward Voltage Drop (V) 94663_02 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 10 10 94663_03 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 Single pulse (thermal resistance) 0.01 0.0001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 0.01 0.1 1 10 94663_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94663 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 UFH60GA60P Vishay Semiconductors 180 160 140 120 100 80 60 40 20 0 0 94663_05 Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A 90 80 70 60 TJ = 125 °C IF = 30 A VR = 200 V Allowable Case Temperature (°C) trr (ns) DC 50 40 30 TJ = 25 °C Square wave (D = 0.50) Rated VR applied See note (1) 20 40 60 80 100 20 10 0 100 94663_07 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 90 80 Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 500 450 400 RMS limit 350 TJ = 125 °C IF = 30 A VR = 200 V Average Power Loss (W) 70 60 50 40 30 20 10 0 0 10 20 30 40 50 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Qrr (nC) 300 250 200 150 100 50 0 100 1000 TJ = 25 °C 94663_06 IF(AV) - Average Forward Current (A) 94663_08 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Fig. 6 - Forward Power Loss Characteristics (Per Leg) 20 IF = 30 A VR = 200 V 15 TJ = 125 °C Irr (A) 10 TJ = 25 °C 5 0 100 94663_09 1000 dIF/dt (A/µs) Fig. 9 - Typical Stored Current vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94663 Revision: 22-Jul-10 www.vishay.com 4 UFH60GA60P Tandem Insulated SOT-227 Vishay Semiconductors Power Module Hyperfast Rectifier, 60 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Document Number: 94663 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A ORDERING INFORMATION TABLE Device code UF 1 1 2 3 4 5 6 7 - H 2 60 3 G 4 A 5 60 6 P 7 Ultrafast rectifier Hyperfast rectifier Current rating (60 = 60 A) Circuit configuration (2 separate diodes, tandem configuration) Package indicator (SOT-227 standard isolated base) Voltage rating (60 = 600 V) P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94663 Revision: 22-Jul-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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