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UFL200FA60P

UFL200FA60P

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    UFL200FA60P - Insulated Ultrafast Rectifier Module, 200 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
UFL200FA60P 数据手册
UFL200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage SOT-227 • Optimized for power conversion: Welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC DESCRIPTION PRODUCT SUMMARY trr IF(AV) at TC = 105 °C VR 102 ns 200 A 600 V The UFL200FA60P insulated modules integrate two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module Isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 85 °C TC = 25 °C TC = 85 °C Any terminal to case, t = 1 min TEST CONDITIONS MAX. 600 144 1000 360 2500 - 55 to 175 UNITS V A W V °C Document Number: 94551 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UFL200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 100 A Forward voltage VFM IF = 200 A IF = 100 A, TJ = 125 °C IF = 200 A Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 175 °C, VR = VR rated VR = 600 V TEST CONDITIONS MIN. 600 TYP. 1.28 1.48 1.13 1.37 5 0.2 80 MAX. 1.44 1.66 1.24 1.55 100 1 μA mA pF V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A VR = 200 V dIF/dt = 200 A/μs TEST CONDITIONS MIN. TYP. 102 210 9 21 443 2086 MAX. 141 293 12 25 744 3355 UNITS ns Peak recovery current A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink Weight Mounting torque SYMBOL TEST CONDITIONS MIN. RthJC RthCS Flat, greased surface 0.05 30 1.3 0.25 g Nm K/W TYP. MAX. 0.5 UNITS °C/W www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94551 Revision: 21-Jul-10 UFL200FA60P Insulated Ultrafast Rectifier Module, 200 A 1000 175°C 100 10 1 0.1 0.01 0.001 100 200 300 400 500 600 125°C Vishay Semiconductors 1000 Reverse Current - I R (μA) 25°C (A) 100 Tj = 175°C Instantaneous Forward Current - I F Reverse Voltage - VR (V) Fig. 1 - Typical Values of Reverse Current vs. Reverse Voltage 10000 10 Tj = 125°C Junction Capacitance - C T (pF) T J = 25˚C 1000 Tj = 25°C 100 1 0.0 0.5 1.0 1.5 2.0 Forward Voltage Drop - VF (V) 2.5 10 10 100 Reverse Voltage - VR (V) 1000 Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage 1 (°C/W) Thermal Impedance Z thJC PDM 0.1 t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94551 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 UFL200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A 250 Vr = 200V 200 Allowable Case Temperature (°C) 200 If = 50A, 125°C 150 trr ( ns ) 100 DC 150 50 Square wave (D=0.50) 80% rated Vr applied If = 50A, 25°C 100 see note (1) 0 0 50 100 150 200 250 50 100 1000 Average Forward Current - I F(AV) (A) di F /dt (A/μs ) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 3500 Vr = 200V 180 3000 Average Power Loss ( W ) 150 2500 120 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 If = 50A, 125°C 90 Qrr ( nC ) RMS Limit 2000 1500 60 DC 30 1000 If = 50A, 25°C 0 0 25 50 75 100 125 150 500 Average Forward Current - IF(AV) (A) 0 100 1000 Fig. 5 - Forward Power Loss Characteristics (Per Leg) di F /dt (A/μs ) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94551 Revision: 21-Jul-10 UFL200FA60P Insulated Ultrafast Rectifier Module, 200 A 50 Vr = 200V 40 Vishay Semiconductors If = 50A, 125°C 30 Irr ( A ) 20 If = 50A, 25°C 10 0 100 1000 di F /dt (A/μs ) Fig. 9 - Typical Stored Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Document Number: 94551 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 UFL200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code UF 1 1 2 3 4 5 6 7 - L 2 200 3 F 4 A 5 60 6 P 7 Ultrafast rectifier Ultrafast Pt low VF Current rating (200 = 200 A) Circuit configuration (2 separate diodes, parallel pin-out) Package indicator (SOT-227 standard isolated base) Voltage rating (60 = 600 V) P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94551 Revision: 21-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
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