UFL60FA60P

UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage SOT-227 • Optimized for power conversion: welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VR IF(AV) per module at TC = 114 °C trr 600 V 60 A 120 ns DESCRIPTION The UFL60FA60P insulated modules integrate two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness, and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be a predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, and dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 85 °C TC = 25 °C TC = 85 °C Any terminal to case, t = 1 min TEST CONDITIONS MAX. 600 48 300 120 2500 - 55 to 175 UNITS V A W V °C Document Number: 94567 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 30 A Forward voltage VFM IF = 60 A IF = 30 A IF = 60 A Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 175 °C, VR = VR rated VR = 600 V TJ = 125 °C TEST CONDITIONS MIN. 600 TYP. 1.1 1.27 1.0 1.17 0.1 0.2 50 MAX. 1.3 1.4 1.23 1.35 100 1.0 μA mA pF V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V TEST CONDITIONS MIN. TYP. 120 206 11 20 600 2060 MAX. 157 252 15 25 1178 3150 UNITS ns Peak recovery current A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink Weight Mounting torque SYMBOL TEST CONDITIONS MIN. RthJC RthCS Flat, greased surface 0.05 30 1.3 0.75 g N·m TYP. MAX. 1.5 °C/W UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94567 Revision: 22-Jul-10 UFL60FA60P Insulated Ultrafast Rectifier Module, 60 A 1000 1000 100 175°C Vishay Semiconductors Reverse Current - IR (μA) 10 1 0.1 0.01 0.001 100 200 125°C 25°C Instantaneous Forward Current - I F (A) 100 300 400 500 600 Reverse Voltage - VR (V) Tj = 175°C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 125°C Junction Capacitance - C T (pF) 2.5 3.0 10 100 Tj = 25°C 1 0.0 0.5 1.0 1.5 2.0 10 10 100 1000 Forward Voltage Drop - VF (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) 10 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) D = 0.75 D = 0.5 1 D = 0.33 D = 0.25 D = 0.2 Single Pulse (Thermal Resistance) 0.1 1E-03 1E-02 1E-01 1E+00 1E+01 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94567 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A 250 Vr = 200V 200 Allowable Case Temperature (°C) 200 If = 30A, 125°C 150 100 trr (ns) DC 150 If = 30A, 25°C 50 Square wave (D=0.50) 80% rated Vr applied 100 see note 1 0 0 10 20 30 40 50 60 70 80 50 100 1000 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) dIF /dt (A/μs ) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3000 Vr = 200V 55 50 2500 If = 30A, 125°C DC RMS Limit D = 0.2 D = 0.25 D = 0.33 D = 0.5 D = 0.75 Average Power Loss ( W ) 45 40 35 2000 Qrr (nC) 30 25 20 15 10 5 0 1500 1000 If = 30A, 25°C 500 0 5 10 15 20 25 30 35 40 45 0 1 00 10 0 0 Average Forward Current - IF(AV) (A) dIF /dt (A/μs ) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94567 Revision: 22-Jul-10 UFL60FA60P Insulated Ultrafast Rectifier Module, 60 A 35 Vr = 200V 30 If = 30A, 125°C 25 Vishay Semiconductors Irr (A) 20 If = 30A, 25°C 15 10 5 100 1000 dIF /dt (A/μs) Fig. 9 - Typical Stored Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Document Number: 94567 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code UF 1 1 2 3 4 5 6 7 - L 2 60 3 F 4 A 5 60 6 P 7 Ultrafast rectifier Ultrafast Pt low VF Current rating (60 = 60 A) Circuit configuration (2 separate diodes, parallel pin-out) Package indicator (SOT-227 standard isolated base) Voltage rating (60 = 600 V) P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94567 Revision: 22-Jul-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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