UG30CPT

UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 1 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 30 A TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 50 V to 200 V 300 A 25 ns 0.85 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 120 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG30APT 50 35 50 UG30BPT 100 70 100 30 300 - 65 to + 150 UG30CPT 150 105 150 UG30DPT 200 140 200 UNIT V V V A A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Document Number: 88762 Revision: 05-Jun-08 15 A 30 A 10 A TEST CONDITIONS SYMBOL VF TJ = 100 °C TA = 25 °C TA = 100 °C IR UG30APT UG30BPT UG30CPT UG30DPT UNIT V 1.0 1.15 0.85 15 800 µA For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 UG30APT thru UG30DPT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum reverse recovery time Maximum reverse recovery time Maximum recovered stored charge Typical junction capacitance TEST CONDITIONS IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C SYMBOL trr UG30APT UG30BPT 25 35 50 22 50 70 UG30CPT UG30DPT UNIT ns trr ns Qrr nC CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode Note: (1) Thermal resistance from junction to case per diode mounted on heatsink (1) SYMBOL RθJC UG30APT UG30BPT UG30CPT UG30DPT UNIT °C/W 2.0 ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N UG30DPT-E3/45 UNIT WEIGHT (g) 6.15 PACKAGE CODE 30 BASE QUANTITY 30/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 36 1000 Average Forward Rectified Current (A) 30 24 18 Peak Forward Surge Current (A) Resistive or Inductive Load TC = 120 °C 8.3 ms Single Half Sine-Wave 100 12 6 0 0 25 50 75 100 125 150 175 10 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88762 Revision: 05-Jun-08 UG30APT thru UG30DPT Vishay General Semiconductor 100 60 Instantaneous Forward Current (A) Recovered Store Change/Reverse Recovery Time (nC/ns) IF = 15 A VR = 30 V 50 dI/dt = 150 A/µs dI/dt = 20 A/µs dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs 10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 40 1 30 20 0.1 10 0.01 0.4 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Instantaneous Forward Voltage (V) Junction Temperature (°C) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Reverse Switching Characteristics Per Diode 1000 100 Instantaneous Reverse Leakage Current (µA) 100 10 TJ = 25 °C Junction Capacitance (pF) TJ = 100 °C 10 1 0.1 TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10° TYP. Both Sides 0.078 (1.98) REF. 10 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1° REF. Both Sides 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 2 CASE Document Number: 88762 Revision: 05-Jun-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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