UG4B

UG4A thru UG4D Vishay General Semiconductor Miniature Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 4.0 A 50 V to 200 V 150 A 20 ns 0.95 V 150 °C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG4A 50 35 50 UG4B 100 70 100 4.0 150 - 55 to + 150 UG4C 150 105 150 UG4D 200 140 200 UNIT V V V A A °C Document Number: 88763 Revision: 23-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UG4A thru UG4D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical reverse recovery time IF = 4.0 A TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C TEST CONDITIONS SYMBOL VF (1) IR trr trr VALUE 0.95 5.0 μA 300 20 30 ns 50 15 Qrr CJ nC 30 20 pF ns UNIT V Typical stored charge Typical junction capacitance Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) SYMBOL RθJA (1) UG4A UG4B 25 UG4C UG4D UNIT °C/W Note Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UG4D-E3/54 UG4D-E3/73 UNIT WEIGHT (g) 1.138 1.138 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 6.0 1000 Average Forward Rectified Current (A) 5.0 4.0 Peak Forward Surge Current (A) Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature TL = 75 °C 8.3 ms Single Half Sine-Wave 100 3.0 2.0 TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 0 25 50 75 100 125 150 175 10 1.0 0 1 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88763 Revision: 23-Oct-09 UG4A thru UG4D Vishay General Semiconductor 100 TJ = 100 °C 10 TJ = 25 °C 1 Pulse Width = 300 μs 1 % Duty Cycle 60 Recovered Stored Change/Reverse Recovery Time, nC/ns Instantaneous Forward Current (A) IF = 4.0 A VR = 30 V 50 dI/dt = 150 A/μs dI/dt = 100 A/μs 40 dI/dt = 20 A/μs dI/dt = 50 A/μs dI/dt = 100 A/μs dI/dt = 150 A/μs dI/dt = 50 A/μs dI/dt = 20 A/μs 30 20 0.1 10 trr Qrr 0 0 25 50 75 100 125 150 175 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Junction Temperature (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Reverse Switching Charateristics 1000 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Reverse Leakage Current (μA) 100 TJ = 100 °C 10 Junction Capacitance (pF) 10 1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 1 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88763 Revision: 23-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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