BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Soft Recovery Rectifiers
Reverse Voltage 100 to 200 V Forward Current 10 A Reverse Recovery Time 20ns
ITO-220AB (BYQ28EF, UGF10 Series)
0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 1 0.160 (4.06) 0.140 (3.56) PIN 2 3 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.055 (1.39) 0.045 (1.14)
1
TO-220AB (BYQ28E, UG10 Series)
0.415 (10.54) MAX. 0.600 (15.5) 0.580 (14.5)
PIN 2 3
0.131 (3.39) DIA. 0.122 (3.08)
0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38)
0.191 (4.85) 0.171 (4.35) 0.060 (1.52)
PIN 1 PIN 3 PIN 2
0.635 (16.13) 0.625 (15.87)
0.350 (8.89) 0.330 (8.38)
0.110 (2.80) 0.100 (2.54)
1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41)
0.037 (0.94) 0.027 (0.69)
0.022 (0.55) 0.014 (0.36)
PIN 1 PIN 3
PIN 2 CASE
Dimensions in inches and (millimeters)
0.022 (0.56) 0.014 (0.36)
0.205 (5.20) 0.195 (4.95)
0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95)
TO-263AB (BYQ28EB, UGB10 Series)
0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14)
0.42 (10.66)
0.245 (6.22) MIN K
Mounting Pad Layout TO-263AB
0.63 (17.02)
0.33 (8.38)
0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00)
0.055 (1.40) 0.047 (1.19)
0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.037 (0.940) 0.027 (0.686)
PIN 1 PIN 2 K - HEATSINK
0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79)
0.08 (2.032) 0.24 (6.096)
0.105 (2.67)
0.12 (3.05)
0.095 (2.41)
0.205 (5.20) 0.195 (4.95)
Features
• Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High reverse energy capability • Excellent high temperature switching • High temperature soldering guaranteed: 250°C/10 seconds at terminals • Glass passivated chip junction • Soft recovery characteristics
Document Number 88549 27-Jun-03
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g
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BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(TC = 25°C unless otherwise noted)
UG10BCT Symbol VRRM VRWM VDC IF(AV)
UG10CCT
UG10DCT Unit V V V A
BYQ28E-100 BYQ28E-150 BYQ28E-200 100 100 100 150 150 150 10 5 55 200 200 200
Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Total device at TC = 100°C Per leg Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg Non-repetitive peak reverse current per leg at tp= 100µs Electrostatic discharge capacitor voltage, Human body model: C = 250pF, R = 1.5kΩ Operating junction and storage temperature range RMS Isolation voltage (BYQ28EF, UGF types) from terminals to heatsink with t = 1 second, RH ≤ 30%
IFSM
A
IRSM VC TJ, TSTG
0.2 8 –40 to +150 4500 (NOTE 1) 3500 (NOTE 2) 1500 (NOTE 3)
A KV °C
VISOL
V
Electrical Characteristics (T
Parameter Maximum instantaneous forward voltage at IF = 10A, at IF = 5A, at IF = 5A, Maximum reverse current per leg at working peak reverse voltage (Note 4)
C
= 25°C unless otherwise noted)
Symbol per leg (Note 4) TJ = 25°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 100°C
Value 1.25 1.10 0.895 10 200 25 20 9
Unit
VF
V µA ns ns nC
IR trr trr Qrr
Maximum reverse recovery time per leg at IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1 IRM Maximum reverse recovery time per leg at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum stored charge per leg IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1 IRM
Thermal Characteristics (T
Parameter
C
= 25°C unless otherwise noted)
UG10 BYQ28E 50 4.5
UGF10 BYQ28EF 55 6.7
UGB10 BYQ28EB 50 4.5 Unit °C/W °C/W
Symbol RθJA RθJC
Typical thermal resistance — junction to ambient per leg — junction to case
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle
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Document Number 88549 27-Jun-03
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Forward Current Derating Curve
15 Resistive or Inductive Load 100
Maximum Non-Repetitive Peak Forward Surge Current Per Leg
Peak Forward Surge Current (A)
TC = 105°C 8.3ms Single Half Sine-Wave (JEDEC Method)
Average Forward Current (A)
10
10
5
0
1 0 50 100 150 1 10 100
Case Temperature (°C)
Number of Cycles at 60 HZ
Typical Instantaneous Forward Characteristics Per Leg
Pulse Width = 300µs 1% Duty Cycle 10 TJ = 125°C 1.0 TJ = 100°C
Typical Reverse Characteristics Per Leg
IR – Instantaneous Reverse Current (µA)
1000 TJ = 125°C 100 100°C
IF – Instantaneous Forward Current (A)
100
10
0.1
TJ = 25°C
1.0 25°C 0.1 20 40 60 80 100
0.01 0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Reverse Switching Characteristics Per Leg
Stored Charge/Reverse Recovery Time (nC/ns)
50 @2A, 20A/µs 100
Typical Junction Capacitance Per Leg
TJ = 125°C f = 1.0 MHZ Vsig = 50mVp-p
30 @1A, 100A/µs 20 @5A, 50A/µs
@5A, 50A/µs
pF – Junction Capacitance trr Qrr
100 125
40
10
10
@1A, 100A/µs @2A, 20A/µs
0
25
50
75
1 0.1
1
10
100
Junction Temperature (°C) Document Number 88549 27-Jun-03
Reverse Voltage (V) www.vishay.com 3
