UGB10DCT

BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Soft Recovery Rectifier Reverse Voltage 100 to 200V Forward Current 10A Reverse Recovery Time 20ns ITO-220AB (BYQ28EF, UGF10 Series) 0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 1 0.160 (4.06) 0.140 (3.56) PIN 2 3 0.603 (15.32) 0.573 (14.55) 1 TO-220AB (BYQ28E, UG10 Series) 0.415 (10.54) MAX. 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) PIN 2 3 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.060 (1.52) PIN 1 PIN 3 PIN 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 3 PIN 2 CASE 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-263AB (BYQ28EB, UGB10 Series) 0.411 (10.45) 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.380 (9.65) 0.245 (6.22) MIN K 0.33 (8.38) Mounting Pad Layout TO-263AB 0.42 (10.66) Dimensions in inches and (millimeters) 0.360 (9.14) 0.320 (8.13) 0.624 (15.85) 1 K 2 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.63 (17.02) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.037 (0.940) 0.08 (2.032) 0.24 (6.096) 0.027 (0.686) 0.12 (3.05) PIN 1 PIN 2 K - HEATSINK 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High reverse energy capability • Excellent high temperature switching • High temperature soldering guaranteed: 250°C/10 seconds at terminals • Glass passivated chip junction • Soft recovery characteristics Document Number 88549 03-Jul-02 Mechanical Data Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g www.vishay.com 1 BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25°C unless otherwise noted) UG10BCT Symbol VRRM VRWM VDC IF(AV) UG10CCT UG10DCT Unit V V V A BYQ28E-100 BYQ28E-150 BYQ28E-200 100 100 100 150 150 150 10 5 55 0.2 8 –40 to +150 0.2 4500 (NOTE 1) 3500 (NOTE 2) 1500 (NOTE 3) 200 200 200 Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Total device at TC = 100°C Per leg Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg Repetitive peak reverse current per leg at tp = 100µs Electrostatic discharge capacitor voltage, Human body model: C = 250pF, R = 1.5kΩ Operating junction and storage temperature range Non-repetitive peak reverse current per leg at tp= 100µs RMS Isolation voltage (BYQ28EF, UGF types) from terminals to heatsink with t = 1 second, RH ≤ 30% IFSM IRRM VC TJ, TSTG IRSM A A KV °C A VISOL V Electrical Characteristics (T Parameter Maximum instantaneous forward voltage at IF = 10A, at IF = 5A, at IF = 5A, Maximum reverse current per leg at working peak reverse voltage (Note 4) C = 25°C unless otherwise noted) Symbol per leg (Note 4) TJ = 25°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 100°C Value 1.25 1.10 0.895 10 200 25 20 9 Unit VF V µA ns ns nC IR trr trr Qrr Maximum reverse recovery time per leg at IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1 IRM Maximum reverse recovery time per leg at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum stored charge per leg IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1 IRM Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) UG10 BYQ28E 50 4.5 UGF10 BYQ28EF 55 6.7 UGB10 BYQ28EB 50 4.5 Unit °C/W °C/W Symbol RΘJA RΘJC Typical thermal resistance — junction to ambient — junction to case Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle www.vishay.com 2 Document Number 88549 03-Jul-02 BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Forward Current Derating Curve 15 Resistive or Inductive Load 100 Maximum Non-Repetitive Peak Forward Surge Current Per Leg Peak Forward Surge Current (A) TC = 105°C 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 10 10 5 0 1 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 HZ Typical Instantaneous Forward Characteristics Per Leg Pulse Width = 300µs 1% Duty Cycle 10 TJ = 125°C 1.0 TJ = 100°C Typical Reverse Characteristics Per Leg IR – Instantaneous Reverse Current (mA) 1000 TJ = 125°C 100 100°C IF – Instantaneous Forward Current (A) 100 10 0.1 TJ = 25°C 1.0 25°C 0.1 20 40 60 80 100 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Reverse Switching Characteristics Per Leg Stored Charge/Reverse Recovery Time (nC/ns) 50 @2A, 20A/µs 100 Typical Junction Capacitance Per Leg TJ = 125°C f = 1.0 MHZ Vsig = 50mVp-p 30 @1A, 100A/µs 20 @5A, 50A/µs @5A, 50A/µs pF – Junction Capacitance trr Qrr 100 125 40 10 10 @1A, 100A/µs @2A, 20A/µs 0 25 50 75 1 0.1 1 10 100 Junction Temperature (°C) Document Number 88549 03-Jul-02 Reverse Voltage (V) www.vishay.com 3