UH20FCT

New Product UH20FCT& UHB20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction TO-220AB TO-263AB K • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency 2 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 UH20FCT PIN 1 PIN 3 PIN 2 CASE 3 UHB20FCT PIN 1 PIN 2 1 1 K HEATSINK • Solder dip 260 °C, 40 s (for TO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency power factor correctors, switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. MECHANICAL DATA Case: TO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 10 A x 2 300 V 180 A 25 ns 0.83 V 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig.1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range per device per diode per diode SYMBOL VRRM IF(AV) IFSM TJ, TSTG UH20FCT 300 20 10 180 - 55 to + 175 UHB20FCT UNIT V A A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A IF = 5.0 A IF = 1 0 A IF = 1 0 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL TYP. 0.96 0.77 VF 1.0 0.83 MAX. V 1.2 0.90 UNIT Maximum instantaneous forward voltage per diode (1) Document Number: 88964 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product UH20FCT& UHB20FCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum reverse current per diode (2) Maximum reverse recovery time Maximum reverse recovery time per diode Typical softness factor (tb/ta) Typical reverse recovery current Typical stored charge Typical forward recovery time per diode Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TEST CONDITIONS VR = 300 V TJ = 25 °C TJ = 125 °C SYMBOL IR trr trr S IRM Qrr tfr TYP. 0.5 25 20 28 0.36 7.0 160 150 MAX. 5 150 25 35 UNIT µA ns ns A nC ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM IF = 10 A, dI/dt = 200 A/µs, VR = 200 V, TJ = 125 °C per diode IF = 10 A, dI/dt = 80 A/µs, VFR = 1.1 x VF max. THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC UH20FCT 2.0 UHB20FCT 2.0 UNIT °C/W ORDERING INFORMATION PACKAGE TO-220AB TO-263AB TO-263AB PREFERRED P/N UH20FCT-E3/4W UHB20FCT-E3/4W UHB20FCT-E3/8W UNIT WEIGHT (g) 1.88 1.38 1.38 PACKAGE CODE 4W 4W 8W BASE QUANTITY 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 12 11 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 1.0 D = 0.8 Average Forward Rectified Current (A) Av erage Power Loss (W) 20 10 9 8 7 6 5 4 3 2 1 16 12 8 T 4 D = tp/T 0 2 4 6 8 tp 10 12 0 0 25 50 75 100 125 150 175 0 Case Temperature (°C) A v erage Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88964 Revision: 13-May-08 New Product UH20FCT& UHB20FCT Vishay General Semiconductor 200 1000 TJ = TJ Max. 10 ms Single Half Sine-Wave Peak Forward Surge Current (A) 180 160 140 120 100 80 60 40 20 1 Instantaneous Reverse Current (µA) 100 TJ = 175 °C TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles Percent of Rated Peak Reverse Voltage (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Reverse Leakage Characteristics Per Diode 100 1000 Instantaneous Forward Current (A) TJ = 125 °C 10 TJ = 175 °C TJ = 25 °C 1 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 88964 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product UH20FCT& UHB20FCT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88964 Revision: 13-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1