V10P12

New Product V10P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 5 A FEATURES TMBS K ® eSMP Series ® • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 10 A 120 V 160 A 100 mJ 0.62 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A TJ max. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS IRRM TJ, TSTG SYMBOL V10P12 V1012 120 10 160 100 0.5 - 40 to + 150 V A A mJ A °C UNIT Document Number: 89171 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P12 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A Instantaneous forward voltage IF = 10 A IF = 5 A IF = 10 A VR = 90 V Reverse current VR = 120 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL VBR TYP. 120 (minimum) 0.57 0.74 0.51 0.62 6 4.5 16 8.5 MAX. 0.82 V 0.70 400 30 μA mA μA mA UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Note (1) Units mounted on recommended PCB 1 oz. pad layout SYMBOL RJA (1) RJL V10P12 60 °C/W 4 UNIT ORDERING INFORMATION (Example) PREFERRED P/N V10P12-M3/86A V10P12-M3/87A V10P12HM3/86A V10P12HM3/87A (1) (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note (1) Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89171 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P12 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Current (A) Resistive or Inductive Load 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TL Measured at the Cathode Band Terminal Instantaneous Reverse Current (mA) 12 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics 9 8 D = 0.5 D = 0.8 D = 0.3 D = 0.2 D = 0.1 D = 1.0 10 000 7 6 5 4 3 2 1 0 0 1 2 3 Junction Capacitance (pF) Average Power Loss (W) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 T 100 D = tp/T 4 5 6 7 8 9 tp 10 11 12 10 0.1 1 10 100 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 100 Junction to Ambient Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C 10 1 TA = 100 °C TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Document Number: 89171 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P12 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89171 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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