V12P10HM3-86A

V12P10HM3-86A

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    V12P10HM3-86A - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay Si...

  • 详情介绍
  • 数据手册
  • 价格&库存
V12P10HM3-86A 数据手册
New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS® K eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition J-STD-020, PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. 30 A 100 V 200 A 100 mJ 0.58 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS IRRM TJ, TSTG SYMBOL V12P10 V1210 100 12 200 100 1.0 - 40 to + 150 V A A mJ A °C UNIT Document Number: 88981 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V12P10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A Instantaneous forward voltage I F = 12 A IF = 5 A I F = 12 A V R = 70 V Reverse current VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL VBR TYP. 100 (minimum) 0.50 0.65 0.43 0.58 7.0 4.4 21.3 11.8 MAX. 0.70 0.64 250 20 μA mA μA mA V UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance Note (1) Units mounted on recommended PCB 1 oz. pad layout SYMBOL RJA RJL (1) V12P10 60 UNIT °C/W 3 ORDERING INFORMATION (Example) PREFERRED P/N V12P10-M3/86A V12P10-M3/87A V12P10HM3/86A V12P10HM3/87A (1) (1) (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88981 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V12P10 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 14 100 Resistive or Inductive Load Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) 12 10 8 6 4 2 0 100 TL measured at the Cathode Band Terminal TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 110 120 130 140 150 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10 D = 0.3 9 D = 0.2 D = 0.5 D = 0.8 10 000 Average Power Loss (W) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 D = tp/T tp T D = 0.1 D = 1.0 Junction Capacitance (pF) 1000 100 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Ambient 10 TA = 125 °C 1 TA = 25 °C 10 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Document Number: 88981 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V12P10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88981 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
V12P10HM3-86A
1. 物料型号: - V12P10

2. 器件简介: - 该PDF文档描述了Vishay General Semiconductor生产的高电流密度表面贴装沟槽MOS势垒肖特基整流器,属于TMBS® eSMP®系列。该器件专为汽车应用设计,具有超低的正向电压降,当电流为5A时,正向电压仅为0.43V。

3. 引脚分配: - 封装形式为TO-277A (SMPC)。

4. 参数特性: - 最大重复峰值反向电压(VRRM):100V - 最大平均正向整流电流(IF(AV)):30A - 峰值正向浪涌电流(IFSM):200A - 在2.0A电流下的非重复性雪崩能量(EAS):100mJ - 在12A电流下的正向电压(VF at IF):0.58V - 最大工作结温和储存温度范围(TJ, TSTG):-40至+150°C

5. 功能详解: - 该器件适用于低电压高频逆变器、自由轮流通道、DC/DC转换器和极性保护应用。特点包括非常低的轮廓高度(典型高度1.1mm)、适合自动放置、沟槽MOS肖特基技术、低正向电压降、低功耗、高效率操作、满足MSL水平1(根据J-STD-020,LF最大峰值260°C)、AEC-Q101认证、符合RoHS指令2002/95/EC和WEEE 2002/96/EC、根据IEC 61249-2-21定义的无卤素等。

6. 应用信息: - 用于低电压高频逆变器、自由轮流通道、DC/DC转换器和极性保护应用。

7. 封装信息: - 封装类型为TO-277A (SMPC),塑封材料满足UL 94 V-0可燃性等级。M3后缀满足JESD 201 class 1A须根测试,HM3后缀满足JESD 201 class 2须根测试。
V12P10HM3-86A 价格&库存

很抱歉,暂时无法提供与“V12P10HM3-86A”相匹配的价格&库存,您可以联系我们找货

免费人工找货