V40100PGW

New Product V40100PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TO-3PW PIN 1 PIN 3 PIN 2 CASE TMBS® TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 70 mH VF at IF = 20 A TJ max. 2 x 20 A 100 V 250 A 250 mJ 0.67 V 150 °C MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 70 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM EAS IRRM dV/dt TJ, TSTG SYMBOL VRRM V40100PGW 100 40 A 20 250 250 1.0 10 000 - 40 to + 150 A mJ A V/μs °C UNIT V Document Number: 89180 Revision: 09-Feb-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product V40100PGW Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 70 V Reverse current per diode VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) TA = 25 °C SYMBOL VBR TYP. 100 (minimum) 0.49 0.58 0.76 0.42 0.54 0.67 16 8.3 69 21 MAX. 0.85 V 0.73 1000 47 μA mA μA mA UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL V40100PGW 2.0 °C/W 1.4 UNIT ORDERING INFORMATION (Example) PACKAGE TO-3PW PREFERRED P/N V40100PGW-M3/4W UNIT WEIGHT (g) 4.5 PACKAGE CODE 4W BASE QUANTITY 30/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 18 D = 0.8 16 D = 0.3 D = 0.2 12 D = 0.1 10 8 6 4 2 D = tp/T 0 4 8 12 16 tp 20 24 T D = 1.0 D = 0.5 Average Forward Current (A) Average Power Loss (W) 0 25 50 75 100 125 150 175 40 14 30 20 10 0 0 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89180 Revision: 09-Feb-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com New Product V40100PGW Vishay General Semiconductor 100 10 000 TA = 150 °C TA = 125 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Junction Capacitance (pF) 1000 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 10 100 TA = 150 °C TA = 125 °C 10 1 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3PW 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.170 (4.32) 0.840 (21.34) 0.820 (20.83) 0.160 (4.06) 0.140 (3.56) Ø 0.146 (3.71) Ø 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.565 (14.35) 0.545 (13.84) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 3° Ref. 3° Ref. 0.098 (2.50) 0.083 (2.12) 0.175 (4.45) 0.165 (4.19) 30° Ref. 10° Typ. Both Sides 0.079 (2.01) 0.065 (1.65) 0.050 (1.27) 3° Ref. 0.077 (1.96) 0.063 (1.60) 0.467 (11.86) 0.453 (11.51) 0.551 (14.00) 0.537 (13.64) R0.155 (R3.94) R0.145 (R3.68) 5° Ref. Both Sides 0.225 (5.72) 0.205 (5.21) 0.030 (0.75) 0.020 (0.50) Document Number: 89180 Revision: 09-Feb-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1