V40100PG_08

V40100PG_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    V40100PG_08 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF =...

  • 详情介绍
  • 数据手册
  • 价格&库存
V40100PG_08 数据手册
New Product V40100PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 250 A 0.67 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs Maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dV/dt TJ, TSTG V40100PG 100 40 20 250 1.0 10 000 - 40 to + 150 UNIT V A A A V/µs °C Document Number: 88972 Revision: 26-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V40100PG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 1 0 A IF = 2 0 A IF = 5 A IF = 1 0 A IF = 2 0 A V R = 70 V Reverse current at rated VR per diode (2) SYMBOL VBR TYP. 100 0.490 0.572 0.731 MAX. 0.81 UNIT V TJ = 25 °C TJ = 25 °C Instantaneous forward voltage per diode (1) VF TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C V 0.42 0.50 0.67 8.4 7.4 0.73 300 15 500 35 µA mA µA mA IR VR = 100 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms 40.5 18.2 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V40100PG 2.0 UNIT °C/W ORDERING INFORMATION PREFERRED P/N V40100PG-E3/45 UNIT WEIGHT (g) 6.109 PREFERRED PACKAGE CODE 45 BASE QUANTITY 30/Tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 16 D = 0.8 14 D = 0.5 D = 0.3 12 10 D = 0.1 8 6 4 2 0 0 25 50 75 100 125 150 175 0 0 5 10 15 20 25 D = tp/T tp T D = 0.2 D = 1.0 Average Forward Current (A) 30 20 10 Case Temperature (°C) Average Power Loss (W) 40 Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88972 Revision: 26-May-08 New Product V40100PG Vishay General Semiconductor 300 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Peak Forward Surge Current (A) 200 150 Junction Capacitance (pF) 250 1000 100 50 0 1 10 100 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 6. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TJ = 150 °C 10 TJ = 125 °C Junction to Case 1 TJ = 25 °C 0.1 1 0.01 0 0.2 0.4 0.6 0.8 1.0 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 100 Instantaneous Reverse Current (mA) TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number: 88972 Revision: 26-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V40100PG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10° TYP. Both Sides 0.078 (1.98) REF. 10 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1° REF. Both Sides 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 2 CASE www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88972 Revision: 26-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
V40100PG_08
1. 物料型号: - 型号:V40100PG

2. 器件简介: - V40100PG是一款由Vishay General Semiconductor生产的双高电压沟槽MOS隔离肖特基整流器,具有超低的正向电压降(Ultra Low $V_{F}=0.420 ~V$ at $I_{F}=5 ~A$)。

3. 引脚分配: - 封装类型:TO-247AD (TO-3P),环氧树脂符合UL 94V-0可燃性等级,终端为无铅锡层覆盖的引线,符合J-STD-002和JESD22-B102标准。

4. 参数特性: - 最大重复峰值反向电压(VRRM):100V - 最大平均正向整流电流(F(AV)):2x20A(每个二极管20A) - 峰值正向浪涌电流(IFSM):250A - 正向电压在20A时(VF atlp=20A):0.67V - 最大工作温度(T max.):150°C

5. 功能详解: - 该器件采用沟槽MOS肖特基技术,具有低正向电压降和低功耗,高效率操作,低热阻,符合RoHS标准,可承受260°C的焊接浸渍40秒。

6. 应用信息: - 适用于高频逆变器、开关电源、飞轮二极管、OR-ing二极管、DC-DC转换器和反向电池保护等应用。

7. 封装信息: - 优选型号:V40100PG-E3/45,重量6.109g,基础包装代码为45,30/Tube的包装方式。
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