V40120C

V40120C, VB40120C & VI40120C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.423 V at IF = 5 A TO-220AB K TO-262AA FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation 2 V40120C PIN 1 PIN 3 PIN 2 CASE 3 1 VI40120C PIN 1 PIN 3 PIN 2 K 2 3 • Low thermal resistance • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) • Solder Dip 260 °C, 40 seconds (for TO-220 & TO-262 package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS 1 TO-263AB K 2 1 VB40120C PIN 1 PIN 2 K HEATSINK For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, TO-262AA & TO263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A Tj max. 2 x 20 A 120 V 250 A 0.630 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per device per diode per diode SYMBOL VRRM IF(AV) IFSM IRRM dv/dt TJ, TSTG V40120C VB40120C 120 40 20 250 1.0 10000 - 20 to + 150 VI40120C UNIT V A A A V/µs °C Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number 88937 22-Aug-06 www.vishay.com 1 V40120C, VB40120C & VI40120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS at IR = 1.0 mA Tj = 25 °C at IF = 5 A IF = 1 0 A IF = 2 0 A at IF = 5 A IF = 1 0 A IF = 2 0 A at VR = 90 V Reverse current at rated VR per diode (1) at VR = 120 V Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Tj = 25 °C VF Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C 0.423 0.518 0.630 11 10 IR 31 22 0.68 500 40 µA mA µA mA SYMBOL V(BR) TYP. 120 (minimum) 0.494 0.584 0.768 MAX. 0.84 V UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V40120C VB40120C 2.0 VI40120C UNIT °C/W ORDERING INFORMATION PACKAGE TO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V40120C-E3/45 VB40120C-E3/4W VB40120C-E3/8W VI40120C-E3/4W UNIT WEIGHT (g) 2.248 1.39 1.39 1.458 PACKAGE CODE 45 4W 8W 4W BASE QUANTITY 50/Tube 50/Tube 800/Reel 50/Tube DELIVERY MODE Tube Tube Tape & Reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 50 Resistive or Inductive Load 18 16 D = 0.5 D = 0.3 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 0 0 4 8 12 16 20 24 D = 0.2 D = 0.1 D = 1.0 D = 0.8 V(B,I)40120C 30 20 Average Power Loss (W) 40 T 10 D = tp/T tp Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number 88937 22-Aug-06 V40120C, VB40120C & VI40120C Vishay General Semiconductor 300 10000 Tj = Tj max. 8.3 ms Single Half Sine-Wave Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Peak Forward Surge Current (A) 200 Junction Capacitance (pF) 250 150 100 1000 50 0 0 10 100 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 Figure 6. Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Tj = 150 °C Junction to Case 1 10 Tj = 125 °C Tj = 25 °C 0.1 1 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 1000 Instantaneous Reverse Current (mA) 100 10 Tj = 150 °C Tj = 125 °C 1 0.1 Tj = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number 88937 22-Aug-06 www.vishay.com 3 V40120C, VB40120C & VI40120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) T O-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 3 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.603 (15.32) 0.573 (14.55) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) TO-262AA 0.411 (10.45) Max. 30° (Typ) (REF) 0.250 (6.35) Min. 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 3 0.510 (12.95) 0.470 (11.94) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 3 PIN 2 HEATSINK 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.41 (10.45) 1 0.380 (9.65) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 MIN. (10.66) 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.33 (8.38) MIN. 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) www.vishay.com 4 Document Number 88937 22-Aug-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1