VBT1045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
FEATURES
TMBS®
TO-263AB
K
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
• Compliant to RoHS Directive 2011/65/EU
1 VBT1045BP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTCS
IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test SYMBOL VRRM IF(DC) (1) IFSM TOP TJ (2) VBT1045BP 45 10 100 - 40 to + 150 200 UNIT V A A °C °C
Revision: 23-Feb-12
Document Number: 89452 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS IF = 5 A I F = 10 A IF = 5 A I F = 10 A TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL TYP. 0.50 0.57 0.41 0.52 5 MAX. 0.68 0.64 500 15 μA mA V UNIT
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
Reverse current
VR = 45 V
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RJC VBT1045BP 3.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-263AB TO-263AB PREFERRED P/N VBT1045BP-E3/4W VBT1045BP-E3/8W UNIT WEIGHT (g) 1.37 1.37 PACKAGE CODE 4W 8W BASE QUANTITY 50/tube 800/reel DELIVERY MODE Tube Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12 10
100
Instantaneous Forward Current (A)
DC Forward Current (A)
TA = 150 °C 10 TA = 125 °C TA = 100 °C 1
8 6 4 2 0
0 25 50 75 100 125 150 175 200 DC Forward Current at Thermal Equilibrium
TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-12
Document Number: 89452 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
10 Junction to Case
Instantaneous Reverse Current (mA)
100
10
TA = 150 °C TA = 125 °C
1
TA = 100 °C
0.1
0.01 TA = 25 °C 20 40 60 80 100
0.001
1 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics
10 000
t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
1000
100 0.1 1 10 100
Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85) 0.591 (15.00)
0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41)
0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79)
Revision: 23-Feb-12
Document Number: 89452 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000