VBT3045CBP-E3

VBT3045CBP-E3

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VBT3045CBP-E3 - Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection - Vishay S...

  • 详情介绍
  • 数据手册
  • 价格&库存
VBT3045CBP-E3 数据手册
New Product VBT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT3045CBP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.39 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test SYMBOL VRRM IF(AV) (1) IFSM TOP, TSTG TJ (2) VBT3045CBP 45 30 A 15 200 - 40 to + 150 ≤ 200 A °C °C UNIT V Document Number: 89373 Revision: 27-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VBT3045CBP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode I F = 15 A IF = 5 A IF = 7.5 A I F = 15 A Reverse current per diode V R = 45 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.42 0.44 0.49 0.30 0.33 0.39 17 MAX. 0.57 V 0.48 2000 50 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VBT3045CBP 1.6 °C/W 0.85 UNIT ORDERING INFORMATION (Example) PACKAGE TO-263AB TO-263AB PREFERRED P/N VBT3045CBP-E3/4W VBT3045CBP-E3/8W UNIT WEIGHT (g) 1.38 1.38 PACKAGE CODE 4W 8W BASE QUANTITY 50/tube 800/reel DELIVERY MODE Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 9 8 D = 0.5 D = 0.3 D = 0.2 D = 1.0 D = 0.1 T D = 0.8 Average Forward Rectified Current (A) 30 Average Power Loss (W) 7 6 5 4 3 2 1 0 25 20 15 10 5 0 100 D = tp/T 0 2 4 6 8 10 12 14 tp 16 18 110 120 130 140 150 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89373 Revision: 27-Oct-10 New Product VBT3045CBP Vishay General Semiconductor 100 100 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C TA = 100 °C Junction Capacitance (pF) 1 TA = 25 °C 1000 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 Junction to Case 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) Document Number: 89373 Revision: 27-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
VBT3045CBP-E3
1. 物料型号: - 型号:VBT3045CBP - 制造商:Vishay General Semiconductor

2. 器件简介: - 该器件是一款沟槽MOS肖特基整流行波二极管,用于光伏太阳能电池旁路保护。具有超低的正向电压降(Ultra Low $V_{F}=0.30 ~V$ at $I_{F}=5.0 ~A$)。

3. 引脚分配: - 封装类型:TO-263AB - 极性:如标记所示 - 安装扭矩:最大10英寸磅

4. 参数特性: - 最大重复峰值反向电压(VRRM):45V - 最大平均正向整流电流(I(AV)):每设备30A,每个二极管15A - 峰值正向浪涌电流(IFSM):200A - 工作结温和存储温度范围(TOP, TSTG):-40至+150°C - 直流正向电流下结温(T(2)):≤200°C

5. 功能详解: - 采用沟槽MOS肖特基技术,具有低正向电压降和低功耗 - 高效率运行 - 符合MSL等级1,根据J-STD-020,LF最大峰值245°C - 不建议用于PCB底部波峰焊接 - 符合RoHS指令2002/95/EC,并符合WEEE 2002/96/EC

6. 应用信息: - 用于太阳能电池接线盒中,作为旁路二极管进行保护,使用直流正向电流,不反向偏置。

7. 封装信息: - 外壳:TO-263AB - 模塑料符合UL 94 V-0可燃性等级 - 基础部件编号-E3 - 符合RoHS,商业等级 - 端子:亚光锡镀层引线,符合J-STD-002和JESD 22-B102可焊性 - E3后缀符合JESD 201 1A级须根测试 - 包装:TO-263AB,VBT3045CBP-E3/4W(单位重量1.38,包装代码4W,50/管),VBT3045CBP-E3/8W(单位重量1.38,包装代码8W,800/卷)。
VBT3045CBP-E3 价格&库存

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