VBUS053CZ-HAF-G-08

VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V FEATURES • Ultra compact LLP75-7L package • Low package height < 0.6 mm 6 5 4 • 3-line USB ESD-protection with max. working range = 5.5 V • VBUS-protection with 28 V working range 7 • Low leakage current 21102 1 2 3 • Low load capacitance CD = 0.7 pF 20517 1 • ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge • Surge current acc. IEC 61000-4-5 IPP > 3 A • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MARKING (example only) XX YY Dot = pin 1 marking XX = date code YY = type code (see table below) 21001 ORDERING INFORMATION DEVICE NAME VBUS053CZ-HAF ORDERING CODE VBUS053CZ-HAF-G-08 TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) 3000 MINIMUM ORDER QUANTITY 15 000 PACKAGE DATA DEVICE NAME VBUS053CZ-HAF PACKAGE NAME LLP75-7L TYPE CODE UA WEIGHT 4.2 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity VBUS: Pin 6 to ground (pin 7) Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85200 Rev. 1.3, 23-May-11 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 1 acc. IEC 61000-4-5; tP = 8/20 μs; single shot acc. IEC 61000-4-5; tP = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP VESD TJ TSTG 3 156 ± 30 ± 30 - 40 to + 125 - 55 to + 150 A W kV kV °C °C TEST CONDITIONS acc. IEC 61000-4-5; tP = 8/20 μs; single shot acc. IEC 61000-4-5; tP = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses SYMBOL IPPM PPP VESD VALUE 3 36 ± 15 ± 15 UNIT A W kV kV Data line D+, D-, ID: Pin 1, 2 and 3 to ground (pin 7) This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF All inputs (pin 1, 2, and 3) to ground (pin 7) PARAMETER Protection paths Reverse working voltage Reverse current Forward voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Line capacitance Line to line capacitance Line symmetry TEST CONDITIONS/REMARKS Number of line which can be protected at IR = 0.1 μA at VR = 3.3 V at VR = 3.3 V; T = 65 °C at VR = VRWM = 5.5 V at IF = 15 mA at IR = 1 mA at IPP = 1 A; acc. IEC 61000-4-5 at IPP = 3 A; acc. IEC 61000-4-5 at IF = 3 A; acc. IEC 61000-4-5 Test pin at VR = 0 V; any other I/O pin at VR = 3.3 V; f = 1 MHz Among pins 1, 2 and 3 at VR = 0 V; f = 1 MHz Difference of the line capacitance VF VBR VC VF CD dCD 0.35 0.5 0.1 pF pF IR SYMBOL Nchannel VRWM MIN. 0.7 6.5 TYP. 10 15 3.4 0.7 MAX. 3 5.5 0.02 0.085 0.1 1.2 10 12 18 4.1 1 UNIT lines V μA μA μA V V V V V pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF VBUS (pin 6) to ground (pin 7) PARAMETER Protection paths Reverse working voltage Reverse current Forward voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Line capacitance TEST CONDITIONS/REMARKS Number of line which can be protected at IR = 100 nA at VR = VRWM = 28 V at IF = 10 mA at IR = 1 mA at IPP = 1 A; acc. IEC 61000-4-5; T = 25 °C at IPP = 3 A; acc. IEC 61000-4-5; T = 25 °C at IF = 3 A; acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VF VBR VC VF CD MIN. 0.6 32 TYP. 0.75 37 42 31 MAX. 1 28 100 0.9 40 45 52 2.2 40 UNIT lines V nA V V V V V pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified APPLICATION NOTE The VBUS053CZ-HAF is intended as an ESD-protection and transient voltage suppressor for one USB-OTG port. The LLP75-7L package contains two separate dies which are mounted on a common ground plane (pin 7). The high-speed data lines D-, D+ and ID, are connected to any of the pins no. 1 to 3. As long as the signal voltage on the data lines is between the ground- and the 5 V working range, the low capacitance PN-diodes offer a very high isolation to ground and to the other data lines. But as soon as any transient signal like an ESD-signal, exceeds this working range of 5 V in either the positive or negative direction, one of the PN-diodes gets intothe forward mode and clamps the transient either to ground or to the avalanche break through level. An extra avalanche diode (separate die) clamps the supply line voltage (VBUS at pin 6) above the 28 V working range to ground (pin 7). Due to the “two die construction” the VBUS line has a very high isolation to the data lines. In case of a destructive transient signal, i.e. coming from a charger, the data lines will not be influenced. VBUS 6 (pinning top view) 5 4 nc. nc. 6 7 GND 7 3 ID 1 2 3 5 4 1 D- 2 D+ 21103 Remark: The input pins no. 1, 2 and 3 are symmetrical. Each of the data signals D-, D+ and ID can be connected to pin 1, 2 or 3. www.vishay.com 2 For technical questions, contact: ESDprotection@vishay.com Document Number: 85200 Rev. 1.3, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF USB-OTG BUS-Port ESD-Protection Vishay Semiconductors for VBUS = 28 V TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % Rise time = 0.7 ns to 1 ns 0.8 f = 1 MHz, one I/O pin at 3.3 V 0.7 0.6 80 % 60 % 53 % Discharge Current IESD 100 % 0.5 CD (pF) 0.4 0.3 0.2 0.1 0 0 1 2 3 4 Pin 1, 2 or 3 to pin 7 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 Time (ns) 22080 VR (V) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 4 - Typical Capacitance CD vs. Reverse Voltage VR 100 100 % 80 % 60 % 20 µs to 50 % 40 % 20 % 0% 0 20548 8 µs to 100 % 10 Pin 6 to pin 7 IF (mA) 1 Pin 1, 2 or 3 to pin 7 0.1 IPPM 0.01 10 20 30 40 0.001 0.5 22409 0.6 0.7 0.8 0.9 1.0 1.1 Time (µs) VF (V) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 5 - Typical Forward Current IF vs. Forward Voltage VF 35 f = 1 MHz 30 25 Pin 6 to pin 7 40 35 30 Pin 6 to pin 7 CD (pF) 20 15 10 5 0 0 5 10 15 20 25 VR (V) 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 10 000 Pin 1, 2 or 3 to pin 7 22408 VR (V) 22410 IR (µA) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 6 - Typical Reverse Voltage VR vs.Reverse Current IR Document Number: 85200 Rev. 1.3, 23-May-11 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V 18 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 50 40 30 20 10 0 - 10 - 20 - 30 Pin 7 to pin 1, 2 or 3 - 40 - 50 0 1 2 3 4 - 60 - 10 0 22413 16 14 12 Pin 1, 2 or 3 to pin 7 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) VC (V) Pin 6 to pin 7 10 8 6 4 2 0 VF 10 20 30 40 50 60 70 80 90 22083 IPP (A) t (ns) Fig. 7 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Fig. 10 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 50 45 40 35 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 140 120 100 acc. IEC 61000-4-2 + 8 kV contact discharge Pin 6 to pin 7 VC (V) 30 25 20 15 10 5 0 0 1 2 3 4 5 Pin 7 to pin 6 VC VC-ESD (V) 80 60 40 20 0 - 20 - 40 - 10 0 22414 Pin 1, 2 or 3 to pin 7 10 20 30 40 50 60 70 80 90 22411 IPP (A) t (ns) Fig. 8 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Fig. 11 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 100 80 60 40 acc. IEC 61000-4-2 + 8 kV contact discharge 20 0 Pin 6 to pin 7 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) VC-ESD (V) - 20 - 40 - 60 - 80 - 100 Pin 1, 2 or 3 to pin 7 40 20 0 - 20 - 10 0 22412 - 120 10 20 30 40 50 60 70 80 90 - 140 - 10 0 22415 10 20 30 40 50 60 70 80 90 t (ns) t (ns) Fig. 9 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) Fig. 12 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical questions, contact: ESDprotection@vishay.com Document Number: 85200 Rev. 1.3, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF USB-OTG BUS-Port ESD-Protection Vishay Semiconductors for VBUS = 28 V 60 50 40 30 Pin 1, 2 or 3 to pin 7 acc. IEC 61000-4-2 contact discharge 80 60 40 acc. IEC 61000-4-2 contact discharge VC-ESD (V) VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 0 5 10 15 20 t = 30 ns VC-ESD Pin 6 to pin 7 20 0 - 20 - 40 0 5 10 15 20 25 30 VC-ESD t = 30 ns 22416 VESD (kV) 22417 VESD (kV) Fig. 13 - Typical Clamping Voltage at after 30 ns of ESD Contact Discharge (acc. IEC 61000-4-2) Fig. 14 - Typical Clamping Voltage at after 30 ns of ESD Contact Discharge (acc. IEC 61000-4-2) PACKAGE DIMENSIONS in millimeters (inches): LLP75-7L 0.3 (0.012) 1.05 (0.041) 0.95 (0.037) Heat sink 0.2 (0.008) 0.3 (0.012) 0.2 (0.008) 0.3 (0.012) 0.55 (0.022) 0.45 (0.018) 1 (0.039) 0.5 (0.020) 0.6 (0.024) 0.25 (0.010) 0.15 (0.006) 0.3 (0.012) 0.15 (0.006) Solder resist mask Solder pad 0.5 (0.020) 0.6 (0.024) 1.65 (0.065) Pin 1 marking 1.55 (0.061) 1.65 (0.065) Foot print recommendation: 0.5 (0.020) 0.3 (0.012) 0.15 (0.006) 0.5 (0.020) 0.25 (0.010) 1 (0.039) Document no.:S8-V-3906.02-014 (4) Created - Date: 04. April 2006 20500 0.5 (0.020) 1 (0.039) 1.55 (0.061) 0.54 (0.021) 0.05 (0.002) 0 (0.000) 0.2 (0.008) Document Number: 85200 Rev. 1.3, 23-May-11 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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