VBUS054B-HS3-GS08

VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 6 5 4 1 19957 2 3 20397 1 Marking (example only) XX YY 21001 Dot = Pin 1 marking XX = Date code YY = Type code (see table below) Ordering Information Device name VBUS054B-HS3 Ordering code VBUS054B-HS3-GS08 Taped units per reel (8 mm tape on 7" reel) 3000 Minimum order quantity 15 000 Package Data Device name VBUS054B-HS3 Package name LLP75-6A Marking code U6 Weight 5.1 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level MSL level 1 (according J-STD-020) Soldering conditions 260 °C/10 s at terminals Absolute Maximum Ratings Rating Test conditions Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Symbol IPPM IPPM PPP PPP VESD VESD TJ TSTG Value 3 10 45 200 ± 15 ± 15 - 40 to + 125 - 55 to + 150 Unit A A W W kV kV °C °C Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VBUS054B-HS3 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VBUS054B-HS3 Parameter Protection paths Reverse stand-off voltage Reverse current Test conditions/remarks Number of line which can be protected at IR = 0.1 µA Pin 1, 3, 4 or 6 to pin 2 at VIN = VRWM = 5 V Pin 1, 3, 4 or 6 to pin 2 at IR = 1 mA Pin 5 to pin 2 at IR = 1 mA Pin 1, 3, 4 or 6 to pin 2 at IPP = 3 A; Pin 1, 3, 4 or 6 to pin 2; acc. IEC 61000-4-5 at IF = 3 A; Pin 2 to pin 1, 3, 4 or 6; acc. IEC 61000-4-5 Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 0 V and VBUS (at pin 5) = 5 V; f = 1 MHz Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 2.5 V and VBUS (at pin 5) = 5 V; f = 1 MHz Difference of the line capacitances Pin 5 to pin 2 at VR = 0 V; f = 1 MHz Symbol N lines VRWM IR VBR VBR VC VF 6.3 6.9 5 < 0.01 7.1 7.9 0.1 8 8.7 15 5 Min. Typ. Max. 4 Unit lines V µA V V V V Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage CD 0.8 1 pF Capacitance CD dCD CZD 0.5 0.8 0.05 pF pF pF Line symmetry Supply line capacitance 110 www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 % 80 % 8 µs to 100 % 100 Pin 2 to Pin 5 10 I F (mA) IPPM 60 % 20 µs to 50 % 40 % 20 % 0% 0 20548 1 Pin 2 to Pin 1, 3, 4 or 6 0.1 0.01 0.001 0.5 10 20 30 40 0.6 0.7 0.8 0.9 1 1.1 1.2 Time (µs) 20550 VF (V) Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Figure 4. Typical Forward Current IF vs. Forward Voltage VF 120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 9 Pin 1, 3, 4 or 6 to Pin 2 8 7 6 Pin 5 to Pin 2 Discharge Current IESD VR (V) 60 % 53 % 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10000 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 Time (ns) 20551 I R (µA) Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20549 f = 1 MHz; V BUS (at Pin 5) = 5 V 20 15 10 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) Pin 1, 3, 4 or 6 to Pin 2 C IN (pF) VC (V) Pin 1, 3, 4 or 6 to Pin 2 5 0 -5 - 10 Pin 5 to Pin 2 VC Pin 2 to Pin 5 Pin 2 to Pin 1, 3, 4 or 6 1 2 3 4 5 6 20552 0 1 2 3 4 V IN (V) IPP (A) Figure 3. Typical Input Capacitance CIN at Pin 1, 3, 4, or 6 vs. Input Voltage VIN Figure 6. Typical Peak Clamping Voltage VCvs. Peak Pulse Current IPP Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VBUS054B-HS3 Vishay Semiconductors 120 100 acc. IEC 61000-4-2 + 8 kV contact discharge 200 150 100 Pin 1, 3, 4 or 6 to Pin 2 VC-ESD (V) VC-ESD (V) 80 60 Pin 1, 3, 4, 6 to Pin 2 40 20 0 - 20 - 10 0 50 0 - 50 - 100 - 150 - 200 - 250 Pin 2 to Pin 1, 3, 4 or 6 0 20555 acc. IEC 61000-4-2 C-ESD contact discharge V 10 20 30 40 50 60 70 80 90 5 10 15 20 20553 t (ns) VESD (kV) Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) 20 0 - 20 - 40 - 60 - 80 - 100 - 120 - 140 - 160 - 10 0 20554 140 Pin 1, 3, 4 or 6 to Pin 2 120 100 80 60 40 20 0 - 20 - 40 - 60 - 80 10 20 30 40 50 60 70 80 90 0 20556 acc. IEC 61000-4-2 contact discharge Pin 5 to Pin 2 VC-ESD (V) VC-ESD (V) VC-ESD acc. IEC 61000-4-2 - 8 kV contact discharge Pin 2 to Pin 5 5 10 15 20 t (ns) VESD (kV) Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) Figure 10. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Application Note: With the VBUS054B-HS3 a double, high speed USB-port or up to 4 other high speed signal or data lines can be protected against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed data lines, D1+, D2+, D1- and D2-, are connected to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the VBUS-level, the low capacitance PN-diodes offer a very high isolation to VBUS, ground and to the other data lines. But as soon as any transient signal exceeds this working range, one of the PN-diodes starts working in the forward mode and clamps the transient to ground or to the avalanche breakthrough voltage level of the Z-diode between pin 5 and pin 2. t w i n U S B P o r t VBUS D1+ D16 5 4 R E C E I V E R IC 1 2 3 D2+ D2GND 20399 www.vishay.com 4 For technical support, please contact: ESD-Protection@vishay.com Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Background knowledge: A zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients down to low and uncritical voltage values. The breakthrough voltage can easily be adjusted by the chiptechnology to any desired value within a wide range. Up to about 6 V the "zener-effect" (tunnel-effect) is responsible for the breakthrough characteristic. Above 6 V the so-called "avalanche-effect" is responsible. This is a more abrupt breakthrough phenomenon. Because of the typical "Z-shape" of the current-voltage-curve of such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short current in the pulse to ground without being destroyed. This requirement can be adjusted by the size of the silicon chip (crystal). The bigger the active area the higher the current that the diode can short to ground. But the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance. The dilemma is that a lot of applications require an effective protection against more then 8 kV ESD while the capacitance must be lower then 5 pF! This is well out of the normal range of a Z-diode. However, a Protection diode with a low capacitance PN-diode (switching diode or junction diode) in series with a Z-diode, can fulfil both requirements simultaneously: low capacitance AND high ESD- and/or surge immunity become possible! A small signal (Vpp < 100 mV) just sees the low capacitance of the PN-diode, while the big capacitance of the Z-diode in series remains "invisible". D ZD C TOT C D = 0.4 pF CZ D = 110 pF 20400 I/O Such a constellation with a Z-diode and a small PN-diode (with low capacitance) in series (anti-serial) is a real unidirectional protection device. The clamping current can only flow in one direction (forward) in the PN-diode. The reverse path is blocked. D ZD Gnd 20401 Another PN-diode "opens" the back path so that the protection device becomes bidirectional! Because the clamping voltage levels in forward and reverse directions are different, such a protection device has a Bidirectional and Asymmetrical clamping behaviour (BiAs) just like a single Z-diode. I/O D1 ZD D2 Gnd 20404 Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 VBUS054B-HS3 Vishay Semiconductors One mode of use is,… in the very first moment before any pulses have arrived, all three diodes are completely discharged (so the diode capacitances are empty of charge) the first signal pulse with an amplitude > 0.5 V will drive the upper PN-diode (D1) in a forward direction and "sees" the empty capacitance of the Z-diode (ZD). Depending on the duration of this pulse and the pause to the next one the Z-diodes capacitance can be charged up so that the next pulse "sees" a lower capacitance. After some pulses the big Z-diode could be completely charged up so that the following pulses just see the small capacitance of both PN-diodes. For some application this can work perfectly..... For others applications the capacitance must be the same all the time from the first till the last pulse. For these applications the appropriate mode of use is to connect the Z-diode to the supply voltage. In this mode the Z-diode is charged up immediately by the supply voltage and both PN-diodes are always used in reverse. This keeps their capacitance at a minimum. D1 ZD I/O D2 Gnd 20405 VBUS D1 ZD I/O D2 Gnd 20406 www.vishay.com 6 For technical support, please contact: ESD-Protection@vishay.com Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP75-6A 18058 Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 7 VBUS054B-HS3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical support, please contact: ESD-Protection@vishay.com Document Number 81586 Rev. 1.4, 07-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1