VCUT05D1-SD0

VCUT05D1-SD0 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package FEATURES • Ultra compact CLP0603 package • Low package height < 0.3 mm 0.27 • 1-line ESD-protection • Working range ± 5.5 V • Low leakage current < 0.1 μA • Low load capacitance CD = 10 pF • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Lead plating: Au (e4) • Lead material: TiNiAg • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 22543 22544 0.3 0.6 MARKING (example only) 1 XY 22454 1 = Year code Open circle = Month code and pin 1 XY = Type code Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 ORDERING INFORMATION DEVICE NAME VCUT05D1-SD0 ORDERING CODE VCUT05D1-SD0-G4-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 15 000 MINIMUM ORDER QUANTITY 15 000 PACKAGE DATA DEVICE NAME VCUT05D1-SD0 PACKAGE NAME CLP0603 TYPE MOLDING COMPOUND WEIGHT FLAMMABILITY RATING CODE D1 0.12 mg UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals Reflow soldering according JEDEC STD-020 ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 μs/single shot Pin 1 to pin 2 acc. IEC 61000-4-5; tp = 8/20 μs; single shot Contact discharge acc. IEC61000-4-2; 10 pulses Air discharge acc. IEC61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 6 78 ± 30 ± 30 - 55 to + 145 - 55 to + 150 UNIT A W kV °C °C Rev. 1.0, 01-Sep-11 Document Number: 83443 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT05D1-SD0 www.vishay.com CUT THE SPIKES WITH VCUT05D1-SD0 The VCUT05D1-SD0 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT05D1-SD0 offers a high isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package size of the tiny CLP0603 package the line inductance is very low, so that fast transients like and ESD-strike can be clamped with minimal over- or undershoots. Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand-off voltage Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance at I = 0.1 μA at V = 5.5 V at I = 1 mA at IPP = 1 A at IPP = IPPM = 6 A at V = 0 V; f = 1 MHz at V = 2.5 V; f = 1 MHz TEST CONDITIONS/REMARKS Number of lines which can be protected SYMBOL Nchannel VRWM VR IR VBR VC VC CD CD MIN. 5.5 6.5 TYP. 7.5 8 8.8 11 10 8.5 MAX. 1 5.5 8.5 0.1 9 10 13 13 UNIT lines V V μA V V V pF pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % Rise time = 0.7 ns to 1 ns 12 f = 1 MHz 10 8 Discharge Current IESD 100 % 80 % CD (pF) 60 % 53 % 6 4 2 0 0 1 2 3 4 5 6 7 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 Time (ns) 22546 VR (V) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR 9 100 % 80 % 60 % 20 µs to 50 % 40 % 3 20 % 0% 0 20548 8 µs to 100 % 8 7 6 VR (V) 40 22547 IPPM 5 4 2 1 10 20 30 0 10-2 10-1 1 101 102 103 104 Time (µs) IR (µA) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Rev. 1.0, 01-Sep-11 Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR Document Number: 83443 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT05D1-SD0 www.vishay.com Vishay Semiconductors 30 Acc. IEC 61000-4-2 contact discharge 20 10 12 10 8 VC-ESD (V) VC in (V) 6 0 - 10 - 20 VC 4 2 0 0 VC-ESD 30 ns Measured acc. to IEC 61000-4-5 (8 μs/12 μs - wave form) 1 2 3 4 5 6 7 - 30 0 22571 5 10 15 20 25 30 22548 IPP in (A) VESD (kV) Fig. 5 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Fig. 8 - Typical Clamping Performance at 8 kV Contact Discharge acc. IEC 61000-4-2 10 5 0 -5 - 10 - 15 - 20 - 25 - 30 - 35 - 40 - 45 - 10 0 22569 Acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) 10 20 30 40 50 60 70 80 90 t (ns) Fig. 6 - Typical Clamping Performance at 8 kV Contact Discharge acc. IEC 61000-4-2 40 35 30 25 Acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 20 15 10 5 0 -5 - 10 - 10 0 10 20 30 40 50 60 70 80 90 22570 t (ns) Fig. 7 - Typical Clamping Performance at 8 kV Contact Discharge acc. IEC 61000-4-2 Rev. 1.0, 01-Sep-11 Document Number: 83443 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT05D1-SD0 www.vishay.com PACKAGE DIMENSIONS in millimeters (mils): CLP0603-2L L e1 Package = Chip Dimensions in mm Vishay Semiconductors b D e A E Millimeters min. A A1 b D E e e1 L 0.12 0.22 0.27 0.57 0.25 0.30 0.60 0.40 0.25 0.15 0.18 4.72 0.24 nom. 0.27 max. 0.30 0.02 0.28 0.33 0.63 8.66 10.62 22.44 min. 9.44 mils nom. 10.63 max. 11.81 0.79 9.84 11.81 23.62 15.75 9.84 5.91 7.09 11.02 12.99 24.80 foot print recommendation: solder 0.75 resist mask 0.02 0.02 0.3 22590 2 terminal silicon package (Si0603) Document no.: S8-V-3906.04-023 (4) Created - Date: 22. Nov. 2010 Rev.2 - Date: 03. Aug. 2011 solder pad 0.28 0.28 Rev. 1.0, 01-Sep-11 Document Number: 83443 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 A1 VCUT05D1-SD0 www.vishay.com CARRIER TAPE in millimeters: CLP0603 Vishay Semiconductors 2 ± 0.05 Ø 1.55 ± 0.05 A-A 1.75 ± 0.1 Section 0.2 ± 0.02 A 4 ± 0.1 3.5 ± 0.05 Ø 0.2 ± 0.05 8 - 0.1 + 0.3 0.67±0.03 max . 2° A B B-B B Section 5° 0.33 ± 0.03 0.37± 0.03 Cummulative tolerances of 10 sprocket holes is +/-0.2 mm 22591 Carrier tape Si0603 Document no. S8-V-3906.04-0025 (4) Created - Date: 22. Nov. 2010 Rev. 1.0, 01-Sep-11 Document Number: 83443 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1