VEMD2500X01

VEMD2500X01, VEMD2520X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VEMD2520X01 VEMD2500X01 • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering 16758-11 DESCRIPTION VEMD2500X01 and VEMD2520X01 are high speed and high sensitive PIN photodiodes in a clear epoxy, miniature surface mount package (SMD) with dome lens. The photo sensitive area of the chip is 0.23 mm2. • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT VEMD2500X01 VEMD2520X01 Ira (μA) 12 12  (deg) ± 15 ± 15 0.1 (nm) 350 to 1120 350 to 1120 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VEMD2500X01 VEMD2520X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow solder profile fig. 7 Acc. J-STD-051 Tamb 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 250 UNIT V mW °C °C °C °C K/W Document Number: 83294 Rev. 1.1, 22-Mar-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2500X01, VEMD2520X01 Vishay Semiconductors Silicon PIN Photodiode BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time VR = 10 V, RL = 1 k,  = 820 nm VR = 10 V, RL = 1 k,  = 820 nm TEST CONDITION IF = 50 mA IR = 100 μA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD Vo TKVo Ik TKIk Ira  p 0.1 tr tf 8.5 32 1 4 1.3 350 - 2.6 11 0.1 12 ± 15 900 350 to 1120 100 100 17 10 MIN. TYP. 1 MAX. UNIT V V nA pF pF mV mV/K μA %/K μA deg nm nm ns ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ira, rel - Relative Reverse Light Current 1000 1.4 Iro - Reverse Dark Current (nA) 1.2 100 VR = 5 V λ = 950 nm 1.0 10 VR = 10 V 1 20 40 60 80 100 0.8 0.6 0 20 40 60 80 100 94 8427 Tamb - Ambient Temperature (°C) 94 8416 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 83294 Rev. 1.1, 22-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2500X01, VEMD2520X01 Silicon PIN Photodiode Vishay Semiconductors 0° 10° 20° 30° 100 Ira - Reverse Light Current (µA) Srel - Relative Sensitivity 10 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 1.0 VCE = 5 V λ = 950 nm 0.1 0.01 16055 0.1 1 10 94 8248 0.6 0.4 0.2 0 Ee - Irradiance (mW/cm²) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 8 CD - Diode Capacitance (pF) 6 E=0 f = 1 MHz 4 2 0 0.1 94 8430 1 10 100 VR- Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage S (λ)rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 400 500 600 700 800 900 1000 1100 21553 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Document Number: 83294 Rev. 1.1, 22-Mar-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ϕ - Angular Displacement VEMD2500X01, VEMD2520X01 Vishay Semiconductors REFLOW SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C Silicon PIN Photodiode DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 19841 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D PACKAGE DIMENSIONS in millimeters: VEMD2500X01 0.4 Ø 1.8 ± 0.1 0.05 ± 0.1 Z 0.19 2.77 ± 0.2 1.6 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 2.3 ± 0.2 exposed copper 0.3 2.3 ± 0.2 0.5 Cathode Pin ID Anode 0.4 1.7 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 2; 18.03.10 21517 0.254 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 83294 Rev. 1.1, 22-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2500X01, VEMD2520X01 Silicon PIN Photodiode Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2520X01 0.4 Ø 1.8 2.77 ± 0.2 X 1.6 0.05 2.2 0.19 2.2 4.2 ± 0.2 exposed copper 0.3 X 20:1 2.3 ± 0.2 0.5 2.3 ± 0.2 0.4 0.6 Cathode Pin ID Anode technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 4; 18.03.10 21488 0.254 Document Number: 83294 Rev. 1.1, 22-Mar-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2500X01, VEMD2520X01 Vishay Semiconductors Silicon PIN Photodiode TAPING AND REEL DIMENSIONS in millimeters: VEMD2500X01 Reel Unreel direction X Ø 62 ± 0.5 2. 0.5 5± Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 Technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 4 ± 0.1 12 ± 0.3 Terminal position in tape Devicce VEMT2000 VEMT2500 VEMD2000 VEMD2500 Cathode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Anode Collector Emitter Ø 1.55 ± 0.05 I X 2:1 4 ± 0.1 2 ± 0.05 Lead I Lead II 3.05 ± 0.1 II Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 www.vishay.com 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 83294 Rev. 1.1, 22-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2500X01, VEMD2520X01 Silicon PIN Photodiode Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2520X01 Reel Unreel direction X 2. Ø 62 ± 0.5 5± 0.5 Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) Terminal position in tape Ø 1.55 ± 0.05 Devicce VEMT2020 VEMT2520 VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMY2850G Anode Cathode Cathode Anode Collector Emitter 4 ± 0.1 2 ± 0.05 Lead I Lead II I X 2:1 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 www.vishay.com 7 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09 21571 Document Number: 83294 Rev. 1.1, 22-Mar-11 For technical questions, contact: detectortechsupport@vishay.com This datasheet is subject to change without notice. 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