VEMT2000X01, VEMT2020X01
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times
21568
VEMT2020X01
VEMT2000X01
• Angle of half sensitivity: = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters.
APPLICATIONS
• Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors
PRODUCT SUMMARY
COMPONENT VEMT2000X01 VEMT2020X01 Note • Test condition see table “Basic Characteristics” Ica (mA) 6 6 (deg) ± 15 ± 15 0.5 (nm) 790 to 970 790 to 970
ORDERING INFORMATION
ORDERING CODE VEMT2000X01 VEMT2020X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Collector emitter voltage Emitter collector voltage Collector current Power power dissipation Junction temperature Operating temperature range Tamb 75 °C TEST CONDITION SYMBOL VCEO VECO IC PV Tj Tamb VALUE 20 7 50 100 100 - 40 to + 100 UNIT V V mA mW °C °C
Document Number: 81595 Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
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VEMT2000X01, VEMT2020X01
Vishay Semiconductors
Silicon NPN Phototransistor
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow profile fig. 8 Acc. J-STD-051 TEST CONDITION SYMBOL Tstg Tsd RthJA VALUE - 40 to + 100 260 250 UNIT °C °C K/W
120
PV - Power Dissipation (mW)
100 80 60
RthJA = 250 K/W
40 20 0 0 10 20 30 40 50 60 70 80 90 100
21619
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica IC = 0.05 mA Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TEST CONDITION IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL VCEO ICEO CCEO Ica p 0.5 VCEsat TkIca 1.1 3 MIN. 20 1 25 6 ± 15 860 790 to 970 0.4 9 100 TYP. MAX. UNIT V nA pF mA deg nm nm V %/K
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81595 Rev. 1.2, 21-Feb-11
VEMT2000X01, VEMT2020X01
Silicon NPN Phototransistor
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1
S(λ)rel - Relative Spectral Sensitivity
60 70 80 90 100
21574
ICE0 - Collector Dark Current (nA)
IF = 0 1000 VCE = 70 V VCE = 25 V 100 VCE = 5 V
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 600 650 700 750 800 850 900 950 1000 1050 1100
10
1 0
20594
10
20
30
40
50
Tamb - Ambient Temperature (°C)
λ - Wavelength (nm)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20° 30°
100
Ica - Collector Light Current (mA)
10
Srel - Relative Sensitivity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
1 VCE = 5 V, λ = 950 nm
0.1
0.01 0.01
21573
0.1
1
10
94 8248
0.6
0.4
0.2
0
Ee - Irradiance (mW/cm²)
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
2.0
Ica rel - Relative Collector Current
90
1.8 1.6 1.4 1.2 1.0 0.8 0.6 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm
tr/tf - Rise/Fall Time (µs)
80 70 60 50 40 30 20 10 0 0 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) tr tf RL = 100 Ω
0
94 8239
20
40
60
80
100
20599
Tamb - Ambient Temperature (°C)
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 7 - Relative Collector Current vs. Ambient Temperature
Document Number: 81595 Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
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ϕ - Angular Displacement
VEMT2000X01, VEMT2020X01
Vishay Semiconductors
REFLOW SOLDER PROFILE
300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C
Silicon NPN Phototransistor
DRYPACK
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
max. 30 s
Temperature (°C)
200 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.
19841
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS VEMT2000X01 in millimeters
0.4 Ø 1.8
± 0.1
± 0.1
2.77
± 0.2
1.6
0.05
2.2
2.2
5.8
± 0.2
0.3
0.1 9
Exposed copper
2.3
± 0.2
Z 20:1
1.1 ± 0.1
0.5
± 0.2
0.4
2.3
Collector
PIN ID
Emitter
1.7 0.75
Solder pad proposal acc. IPC 7351
Technical drawings according to DIN specifications
Not indicated to Ø 2.3 6.7
± 0.1
lerances ±0.1
Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08
21570
0.254
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81595 Rev. 1.2, 21-Feb-11
VEMT2000X01, VEMT2020X01
Silicon NPN Phototransistor
Vishay Semiconductors
PACKAGE DIMENSIONS VEMT2020X01 in millimeters
0.4
Ø 1.8
2.77 ± 0.2
1.6
2.2 4.2 ± 0.2
0 .1 9
0.05
2.2
Exposed copper
2.3 ± 0.2
0.5
2.3 ± 0.2
0.4
0.3
0.6
Collector
Pin ID
Emitter Technical drawings according to DIN specifications
0.75
Solder pad proposal acc. IPC 7351
Not indicated tolerances ± 0.1 2.45 5.15
Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09
21569
0.254
Document Number: 81595 Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 5
VEMT2000X01, VEMT2020X01
Vishay Semiconductors
Silicon NPN Phototransistor
TAPE AND REEL DIMENSIONS VEMT2000X01 in millimeters
Reel Unreel direction X
Ø 62 ± 0.5
2. 0.5 5±
Tape position coming out from reel 6000 pcs/reel
Ø 330 ± 1
Ø
13
±
0.5
Label posted here 12.4 ± 1.5
Technical drawings according to DIN specifications
Leader and trailer tape: Empty (160 mm min.) Parts mounted
Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 4 ± 0.1
Terminal position in tape Devicce
VEMT2000 VEMT2500 VEMD2000 VEMD2500 Cathode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Anode Collector Emitter
Ø 1.55 ± 0.05 I X 2:1
4 ± 0.1 2 ± 0.05
Lead I
Lead II
3.05 ± 0.1 II
Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10
21572
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81595 Rev. 1.2, 21-Feb-11
12 ± 0.3
VEMT2000X01, VEMT2020X01
Silicon NPN Phototransistor
Vishay Semiconductors
TAPE AND REEL DIMENSIONS VEMT2020X01 in millimeters
Reel Unreel direction X
2.
Ø 62 ± 0.5
5± 0.5
Tape position coming out from reel 6000 pcs/reel
Ø 330 ± 1
Ø
13
±
0.5
Label posted here 12.4 ± 1.5
technical drawings according to DIN specifications
Leader and trailer tape: Empty (160 mm min.) Parts mounted
Direction of pulling out Empty (400 mm min.) Terminal position in tape Ø 1.55 ± 0.05 Devicce
VEMT2020 VEMT2520 VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMY2850G Anode Cathode Cathode Anode Collector Emitter
4 ± 0.1 2 ± 0.05
Lead I
Lead II
I
X 2:1
1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3
3.05 ± 0.1 II 4 ± 0.1
Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09
21571
Document Number: 81595 Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 7
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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