VEMT2500X01_11

VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW VEMT2520X01 VEMT2500X01 • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 15° 16758-10 • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DESCRIPTION VEMT2500X01 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting. The device is sensitive to visible and near infrared radiation. APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT VEMT2500X01 VEMT2520X01 Note • Test condition see table “Basic Characteristics” Ica (mA) 6 6  (deg) ± 15 ± 15 0.1 (nm) 470 to 1090 470 to 1090 ORDERING INFORMATION ORDERING CODE VEMT2500X01 VEMT2520X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter voltage Emitter collector voltage Collector current Power power dissipation Junction temperature Operating temperature range Tamb  75 °C TEST CONDITION SYMBOL VCEO VECO IC PV Tj Tamb VALUE 20 7 50 100 100 - 40 to + 100 UNIT V V mA mW °C °C Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow profile fig. 8 Acc. J-STD-051 TEST CONDITION SYMBOL Tstg Tsd RthJA VALUE - 40 to + 100 260 250 UNIT °C °C K/W 120 PV - Power Dissipation (mW) 100 80 60 RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21619 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica IC = 0.05 mA Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V TEST CONDITION IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V SYMBOL VCEO ICEO CCEO ICA  p 0.1 VCEsat TkIca 1.1 3 MIN. 20 1 25 6 ± 15 850 470 to 1090 0.4 9 100 TYP. MAX. UNIT V nA pF mA deg nm nm V %/K www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IF = 0 1000 VCE = 70 V VCE = 25 V 100 VCE = 5 V 1.2 S (λ)rel - Relative Spectral Sensitivity ICE0 - Collector Dark Current (nA) 1.0 0.8 0.6 0.4 0.2 0 10 1 0 20594 10 20 30 40 50 60 70 80 90 100 21555 400 500 600 700 800 900 1000 1100 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 100 Ica - Collector Light Current (mA) 10 Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 1 VCE = 5 V, λ = 950 nm 0.1 0.01 0.01 21573 0.1 1 10 94 8248 0.6 0.4 0.2 0 Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 2.0 Ica rel - Relative Collector Current 90 1.8 1.6 1.4 1.2 1.0 0.8 0.6 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm tr/tf - Rise/Fall Time (µs) 80 70 60 50 40 30 20 10 0 0 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) tr tf RL = 100 Ω 0 94 8239 20 40 60 80 100 20599 Tamb - Ambient Temperature (°C) Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 7 - Relative Collector Current vs. Ambient Temperature Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 ϕ - Angular Displacement VEMT2500X01, VEMT2520X01 Vishay Semiconductors REFLOW SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C Silicon NPN Phototransistor DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE max. 30 s Temperature (°C) 200 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 19841 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS VEMT2500X01 in millimeters 0.4 Ø 1.8 ± 0.1 ± 0.1 2.77 ± 0.2 1.6 0.05 2.2 2.2 5.8 ± 0.2 0.3 0.1 9 Exposed copper 2.3 ± 0.2 Z 20:1 1.1 ± 0.1 0.5 ± 0.2 0.4 2.3 Collector PIN ID Emitter 1.7 0.75 Solder pad proposal acc. IPC 7351 Technical drawings according to DIN specifications Not indicated to Ø 2.3 6.7 ± 0.1 lerances ±0.1 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 0.254 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS VEMT2520X01 in millimeters 0.4 Ø 1.8 2.77 ± 0.2 1.6 2.2 4.2 ± 0.2 0 .1 9 0.05 2.2 Exposed copper 2.3 ± 0.2 0.5 2.3 ± 0.2 0.4 0.3 0.6 Collector Pin ID Emitter Technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 0.254 Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor TAPE AND REEL DIMENSIONS VEMT2500X01 in millimeters Reel Unreel direction X Ø 62 ± 0.5 2. 0.5 5± Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 Technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 4 ± 0.1 12 ± 0.3 Terminal position in tape Devicce VEMT2000 VEMT2500 VEMD2000 VEMD2500 Cathode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Anode Collector Emitter Ø 1.55 ± 0.05 I X 2:1 4 ± 0.1 2 ± 0.05 Lead I Lead II 3.05 ± 0.1 II Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 www.vishay.com 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2520X01 in millimeters Reel Unreel direction X 2. Ø 62 ± 0.5 5± 0.5 Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) Terminal position in tape Ø 1.55 ± 0.05 Devicce VEMT2020 VEMT2520 VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMY2850G Anode Cathode Cathode Anode Collector Emitter 4 ± 0.1 2 ± 0.05 Lead I Lead II I X 2:1 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09 21571 Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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