VESD03A1C-02Z-GS08

VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 46 pF (VR = 2.5 V; f = 1 MHz) • Leakage current < 0.5 µA (VR = 3.3 V) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 2 20278 20516 2 Marking (example only) XY Ordering Information Device name VESD03A1C-02Z 20279 Bar = Cathode marking X = Date code Y = Type code (see table below) Ordering code VESD03A1C-02Z-GS08 Taped units per reel (8 mm tape on 7" reel) 8000 Minimum order quantity 8000 Package Data Device name VESD03A1C-02Z Package name SOD923 Type code C Weight 0.45 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Test condition acc. IEC 61000-4-5, tP = 8/20 µs/single shot acc. IEC 61000-4-5, tP = 8/20 µs/single shot contact discharge acc. IEC 61000-4-2; 10 pulses air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Symbol IPPM PPP VESD VESD TJ TSTG Value 9.5 95 ± 30 ± 30 - 40 to + 125 - 55 to + 150 Unit A W kV kV °C °C * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81690 Rev. 1.3, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VESD03A1C-02Z Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode) With the VESD03A1C-02Z one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD03A1C-02Z clamping behaviour is Bidirectional and Asymmetrical (BiAs). L1 2 1 20280 Electrical Characteristics Ratings at 25 °C, ambient temperature, unless otherwise specified VESD03A1C-02Z BiAs mode (between pin 1 and pin 2) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Reverse clamping voltage at IPP = IPPM = 9.5 A at IPP = 0.2 A Forward clamping voltage at IPP = 1 A at IPP = IPPM = 9.5 A at VR = 0 V; f = 1 MHz Capacitance at VR = 2.5 V; f = 1 MHz CD 46 pF VC VF VF VF CD 8.5 0.9 1.1 2.5 78 85 10 1.2 V V V V pF Test conditions/remarks number of lines which can be protected at IR = 0.5 µA at VR = 3.3 V at IR = 1 mA at IPP = 1 A Symbol Nlines VRWM IR VBR VC 5 3.3 0.06 6 6.4 1 6.6 7.5 Min. Typ. Max. 1 Unit lines V µA V V www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 81690 Rev. 1.3, 22-Sep-08 VESD03A1C-02Z Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 60 % 53 % 100 Discharge Current IESD 10 IF (mA) 1 0.1 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 0.01 0.001 0.5 20697 0.6 0.7 0.8 0.9 Time (ns) VF (V) Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 4. Typical Forward Current IF vs. Forward Voltage VF 7 100 % 80 % 60 % 8 µs to 100 % 6 5 20 µs to 50 % 40 % V R ( V) 40 4 3 2 IPPM 20 % 1 0% 0 20548 10 20 30 0 0.01 20698 0.1 1 10 100 1000 10000 Time (µs) IR (µA) Figure 2. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 10 90 f = 1 MHz 80 70 60 8 6 positive surge VC (V) CD (pF) 50 40 30 4 Measured acc. IEC 61000-4-5 2 (8/20 µs - wave form) 0 VC 20 10 0 0 20969 -2 negative surge -4 0.5 1 1.5 2 2.5 3 3.5 20699 0 1 2 3 4 5 6 7 8 9 10 11 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR IPP (A) Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Document Number 81690 Rev. 1.3, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VESD03A1C-02Z Vishay Semiconductors 60 50 40 30 acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 10 0 10 20 30 40 50 60 70 80 90 20700 t (ns) Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 30 20 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) 10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 20701 t (ns) Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 200 150 acc. IEC 61000-4-2 contact discharge 100 positive discharge VC-ESD (V) 50 0 - 50 - 100 negative discharge - 150 - 200 0 5 10 15 20 25 30 35 VC-ESD 20702 VESD (kV) Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: ESD-Protection@vishay.com Document Number 81690 Rev. 1.3, 22-Sep-08 VESD03A1C-02Z Vishay Semiconductors Package Dimensions in millimeters (inches): SOD923 0.13 [0.005] 0.07 [0.003] 5 degree ref max. 0.05 [0.002] 0.3 [0.012] 0.25 [0.010] 0.15 [0.006] [0.026] 0.75 [0.030] 0.65 0.55 [0.022] 0.85 [0.033] foot print recommendation: 1.1 [0.043] 0.9 [0.035] 0.35 [0.014] 0.9 [0.035] Document no.: S8-V-3880.05-001 (4) Rev. 1 - Date: 05.July.2006 20096 Document Number 81690 Rev. 1.3, 22-Sep-08 max. 0.41 [0.016] www.vishay.com 5 0.39 [0.015] For technical support, please contact: ESD-Protection@vishay.com 0.37 [0.015] VESD03A1C-02Z Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: ESD-Protection@vishay.com Document Number 81690 Rev. 1.3, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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