VESD05A4A-HS4

VESD05A4A-HS4 Vishay Semiconductors 4-Line (Quad) ESD Protection Diode Array in LLP1010-6L Features • • • • • • Ultra compact LLP1010-6L package Low package height < 0.4 mm 4-line ESD protection (quad) Low leakage current < 0.1 µA Low load capacitance CD = 12 pF ESD-protection acc. IEC 61000-4-2 ± 15 kV contact discharge ± 17 kV air discharge Surge current acc. IEC 6100-4-5 IPP > 2.5 A Soldering can be checked by standard vision inspection. No X-ray necessary Pin plating NiPdAu (e4) no whisker growth Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 5 6 4 1 20896 2 3 20897 • • • • Marking (example only) XY 20932 Dot = Pin 1 marking X = Date code Y = Type code (see table below) Ordering Information Device name VESD05A4A-HS4 Ordering code VESD05A4A-HS4-GS08 Taped units per reel (8 mm tape on 7" reel) 5000 Minimum order quantity 5000 Package Data Device name Package name Type code A Weight Molding compound flammability rating UL 94 V-0 Moisture sensitivity level MSL level 1 (according J-STD-020) Soldering conditions VESD05A4A-HS4 LLP1010-6L 1.07 mg 260 °C/10 s at terminals ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: ESDprotection@vishay.com www.vishay.com 1 VESD05A4A-HS4 Vishay Semiconductors Absolute Maximum Ratings Rating Test conditions BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot Contact discharge Acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6) Air discharge Contact Acc. IEC 61000-4-2 ; 10 pulses discharge BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Air Pin 2 and 6 not connected. discharge Junction temperature Symbol IPPM IPPM PPP PPP VESD VESD VESD VESD TJ TSTG Value 2.5 2.5 30 33 ± 15 ± 17 ± 15 ± 17 - 40 to + 125 - 55 to + 150 Unit A A W W kV kV kV kV °C °C Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature BiAs-Mode (4-line Bidirectional Asymmetrical protection mode) With the VESD05A4A-HS4 up to 4 signal- or data-lines (L1 to L4) can be protected against voltage transients. With pin 2 and 6 connected to ground and pin 1, 3, 4 and 5 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A4A-HS4 clamping behaviour is Bidirectional and Asymmetrical (BiAs). L4 5 6 4 L3 1 L1 2 3 L2 20898 www.vishay.com 2 For technical support, please contact: ESDprotection@vishay.com Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VESD05A4A-HS4 BiAs mode: each input (pin 1, 3, 4 and 5) to ground (pin 2 and/or 6) Parameter Protection paths Reverse stand-off voltage Reverse current Reverse breakdown voltage Clamping voltage Forward clamping voltage Capacitance at VR = 2.5 V; f = 1 MHz CD 7.5 8.5 pF Test conditions/remarks Number of line which can be protected at IR = 0.1 µA at VR = VRWM = 5 V at IR = 1 mA at IPP = 2.5 A acc. IEC 61000-4-5 at IF = 2.5 A acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Symbol Nlines VRWM IR VBR VC VF CD 12 6 5 < 0.01 0.1 8 12 2.5 15 Min. Typ. Max. 4 Unit lines V µA V V V pF If a higher surge current or peak pulse current (IPP) is needed, some protection diodes in the VESD05A4A-HS4 can also be used in parallel in order to "multiply" the performance. If two diodes are switched in parallel you get • double surge power = double peak pulse current (2 x IPPM) • half of the line inductance = reduced clamping voltage • half of the line resistance = reduced clamping voltage • double line Capacitance (2 x CD) • double Reverse leakage current (2 x IR) 5 L1 6 4 L2 1 2 3 20900 Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: ESDprotection@vishay.com www.vishay.com 3 VESD05A4A-HS4 Vishay Semiconductors BiSy-mode (3-line Bidirectional Symmetrical protection mode) If a bipolar symmetrical protection device is needed the VESD05A4A-HS4 can also be used as a three-line protection device. Therefore three pins (example: pin 1, 3, and 5) has to be connected to the signal- or dataline (L1 to L3) and pin 3 to ground. Pin 2 and 6 must not be connected! Positive and negative voltage transients will be clamped in the same way. The clamping current from one data line through the VESD05A4A-HS4 to the ground passes one diode in forward direction and the other one in reverse direction. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the VESD05A4A-HS4 voltage clamping behaviour is also Bidirectional and Symmetrical (BiSy). L1 5 6 4 L3 1 L2 2 3 20901 Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VESD05A4A-HS4 BiSy mode: each input (pin 1, 3, 4 or 5) to any other input pin connected to ground; pin 2 and 6 not connected Parameter Protection paths Reverse stand-off voltage Reverse current Reverse breakdown voltage Clamping voltage Capacitance at VR = 2.5 V; f = 1 MHz CD 5 7 pF Test conditions/remarks Number of line which can be protected at IR = 0.1 µA at VR = VRWM = 5.5 V at IR = 1 mA at IPP = 2.5 A acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Symbol Nlines VRWM IR VBR VC CD 6.5 11.5 6 5.5 < 0.01 0.1 8.7 13 8 Min. Typ. Max. 3 Unit lines V µA V V pF www.vishay.com 4 For technical support, please contact: ESDprotection@vishay.com Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C, unless otherwise specified) 100 100 % 80 % 60 % 20 µs to 50 % 40 % 20 % 0% 0 20548 8 µs to 100 % 10 IF (mA) 1 IPPM 0.1 0.01 10 20 30 40 0.001 0.5 20889 0.6 0.7 0.8 0.9 1 Time (µs) VF (V) Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Figure 4. Typical Forward Current IF vs. Forward Voltage VF 120 % Rise time = 0.7 ns to 1 ns 8 7 6 Discharge Current IESD 100 % 80 % 5 VR (V) 60 % 53 % 4 3 2 1 0 0.01 0.1 1 10 100 1000 10000 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 20890 Time (ns) IR (µA) Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 14 f = 1 MHz 12 BiAs-mode 10 15 10 positive surge 5 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) negative surge - 10 - 15 0 1 2 3 4 5 6 20891 CD (pF) VC (V) 8 6 4 2 0 BiSy-mode VC 0 -5 BiSy-mode 0 1 2 3 20888 VR (V) IPP (A) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: ESDprotection@vishay.com www.vishay.com 5 VESD05A4A-HS4 Vishay Semiconductors 12 10 8 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) VC positive surge 150 acc. IEC 61000-4-2 contact discharge 100 positive discharge 50 VC-ESD (V) 6 VC (V) 4 2 0 -2 -4 0 0 - 50 negative discharge - 100 VC-ESD BiAs-mode negative surge - 150 1 2 3 20895 0 5000 10000 15000 20000 20892 IPP (A) VESD (kV) Figure 7. Typical Peak Clamping VoltageVC vs. Peak Pulse Current IPP Figure 10. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) 70 60 50 40 acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 30 20 10 0 - 10 - 20 - 30 - 10 0 10 20 30 40 50 60 70 80 90 20893 t (ns) Figure 8. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 30 20 10 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) 0 - 10 - 20 - 30 - 40 - 50 - 60 - 10 0 10 20 30 40 50 60 70 80 90 20894 t (ns) Figure 9. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 6 For technical support, please contact: ESDprotection@vishay.com Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP1010-6L 0.22 (0.009) exp. DAP 0.35 (0.014) bsc 0.2 (0.008) 0.25 (0.010) 0.15 (0.006) 0.1 (0.004) 0.5 (0.020) exp. DAP 0.7 (0.028) ref. 0.4 (0.016) 0.33 (0.013) 0.03 (0.001) Pin 1 marking 1.05 (0.041) 0.95 (0.037) 1.05 (0.041) 0.95 (0.037) Foot print recommendation: 0.3 (0.012) 0.175 (0.007) 0.05 (0.002) 0 (0.000) 0.35 (0.014) 0.35 (0.014) 0.5 (0.020) 0.125 (0.005) ref. Solder resist mask Solder pad Soldermask opening ± 0.03 measured middle of the package Document no.:S8-V-3906.04-004 (4) Created - Date: 17.July.2007 Rev. 4 - Date: 09. Sep. 2008 20899 0.7 (0.028) 0.22 (0.009) Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: ESDprotection@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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