VESD05A5A-HS3_08

VESD05A5A-HS3_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VESD05A5A-HS3_08 - Line ESD-Protection Diode Array in LLP75 - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
VESD05A5A-HS3_08 数据手册
VESD05A5A-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75 Features Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 13 pF ESD-immunity acc. IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge • Working voltage range VRWM = 5 V • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • • • • • 6 5 4 1 19957 2 3 19956 1 Marking (example only) XX YY 21001 Dot = Pin 1 marking XX = Date code YY = Type code (see table below) Ordering Information Device name VESD05A5A-HS3 Ordering code VESD05A5A-HS3-GS08 Taped units per reel (8 mm tape on 7" reel) 3000 Minimum order quantity 15000 Package Data Device name VESD05A5A-HS3 Package name LLP75-6A Type code AE Weight 5 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions MSL level 1 (according J-STD-020) 260 °C/10 s at terminals * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81250 Rev. 1.3, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VESD05A5A-HS3 Vishay Semiconductors Absolute Maximum Ratings Rating Test condition BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1 - pin 6) to any other input pin. Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1 - pin 6) to any other input pin. Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2) ESD immunity contact discharge air discharge Symbol IPPM IPPM PPP PPP VESD VESD VESD VESD TJ TSTG Value 2.5 2.5 33 43 ± 15 ± 15 ± 10 ± 10 - 40 to + 125 - 55 to + 150 Unit A A W W kV kV kV kV °C °C Peak pulse current Peak pulse power contact acc. IEC 61000-4-2 ; 10 pulses discharge BiSy-mode: each input (pin 1 - pin 6) to any other input pin. air Pin 2 not connected. discharge Junction temperature Operating temperature Storage temperature Application Note: a) With the VESD05A5A-HS3 5 different signal or data lines can be clamped to ground. Due to the different clamping levels in forward and reverse direction the VESD05A5A-HS3 clamping behavior is Bidirectional and Asymmetrical (BiAs). L1 L2 L3 6 5 4 1 2 3 L4 L5 19958 b) If symmetrical clamping behaviour is required the VESD05A5A-HS3 can also be used as a Bidirectional Symmetrical protection device protecting up to 4 lines. In this case pin no. 2 must not be connected. L1 L2 L3 6 5 4 1 2 3 L4 19959 www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 81250 Rev. 1.3, 22-Sep-08 VESD05A5A-HS3 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VESD05A5A-HS3 BiAs mode (between pin 1, 3, 4, 5 or 6 and pin 2) Parameter Protection paths Reverse stand off voltage Max. reverse current Reverse break down voltage Reverse clamping voltage at IPP = IPPM = 2.5 A at IPP = 1 A Forward clamping voltage at IPP = IPPM = 2.5 A at VR = 0 V; f = 1 MHz Line capacitance at VR = 2.5 V; f = 1 MHz CD 8 pF VF CD 3.2 13 4 15 V pF VC VF 12 2 13 2.5 V V Test conditions/remarks number of lines which can be protected at IR = 0.1 µA at VR = 5 V at IR = 1 mA at IPP = 1 A Symbol Nlines VRWM IR VBR VC 6 5 < 0.01 6.7 9 0.1 7.5 10 Min. Typ. Max. 5 Unit lines V µA V V Typical Characteristics Tamb = 25 °C, unless otherwise specified 120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 60 % 20 µs to 50 % 40 % 20 % 0% 0 20548 8 µs to 100 % Discharge Current IESD 100 % 80 % 53 % 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 IPPM 60 % 10 20 30 40 Time (ns) Time (µs) Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 2. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Document Number 81250 Rev. 1.3, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VESD05A5A-HS3 Vishay Semiconductors 16 f = 1 MHz 14 12 14 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 12 10 8 reverse CD (pF) 10 VC (V) 6 4 2 0 VC 8 6 4 2 0 0 1 2 3 4 5 -2 -4 -6 0 19951 forward 0.5 1 1.5 2 2.5 3 3.5 4 19948 VR (V) IPP (A) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Figure 6. Typical Clamping Voltage vs. Peak Pulse Current IPP 100 100 80 60 acc. IEC 61000-4-2 + 8 kV contact discharge 10 IF (mA) 1 VC-ESD (V) 0.6 0.7 0.8 0.9 1 1.1 40 20 0.1 0.01 0 - 20 - 10 0 10 20 30 40 50 60 70 80 90 19994 0.001 0.5 19949 VF (V) t (ns) Figure 4. Typical Forward Current IF vs. Forward Voltage VF Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 8 7 6 40 20 0 VR (V) 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10 000 VC-ESD (V) - 20 - 40 - 60 - 80 acc. IEC 61000-4-2 - 8 kV contact discharge - 100 - 10 0 10 20 30 40 50 60 70 80 90 19995 19950 IR (µA) t (ns) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: ESD-Protection@vishay.com Document Number 81250 Rev. 1.3, 22-Sep-08 VESD05A5A-HS3 Vishay Semiconductors 200 150 100 acc. IEC 61000-4-2 contact discharge VC-ESD (V) 50 VC-ESD 0 - 50 - 100 - 150 - 200 0 5 10 15 20 19954 VESD (kV) Figure 9. Typical max. Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Package Dimensions in millimeters (inches): LLP75-6A 18058 Document Number 81250 Rev. 1.3, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 VESD05A5A-HS3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: ESD-Protection@vishay.com Document Number 81250 Rev. 1.3, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
VESD05A5A-HS3_08
物料型号: - 型号名称:VESD05A5A-HS3 - 订购代码:VESD05A5A-HS3-GS08

器件简介: - VESD05A5A-HS3是Vishay Semiconductors生产的一款5线ESD保护二极管阵列,封装为LLP75。

引脚分配: - 该器件有6个引脚,其中pin 1到pin 6为输入,pin 2为接地。

参数特性: - 超紧凑的LLP75-6A封装 - 5线ESD保护 - 低漏电流:$I_{R}<0.1 \mu A$ - 低负载电容:$C_{D}=13 pF$ - 符合IEC 61000-4-2的ESD免疫 - 工作电压范围:$V_{RWM }=5 ~V$ - 无铅组件,符合WEEE 2002/96/EC

功能详解: - 该器件能够承受±15kV的接触放电和空气放电,用于保护敏感电路免受静电放电的损害。

应用信息: - 适用于需要ESD保护的场合,如便携式电子设备、通信设备等。

封装信息: - 封装类型:LLP75-6A - 重量:AE 5 mg - 阻燃等级:UL 94 V-0 - 湿度敏感等级:MSL 1级(依据J-STD-020) - 焊接条件:260°C/10秒在端子处
VESD05A5A-HS3_08 价格&库存

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