VESD05A8B-HNH
Vishay Semiconductors
8-Line ESD-Protection Diode Array in LLP1713-9L
Features
Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 0.5 µA Low load capacitance CD = 20 pF ESD-immunity acc. IEC 61000-4-2 ± 17 kV contact discharge ± 17 kV air discharge • Working voltage range VRWM = 5 V • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • • • • • •
1 9 2 3 4
8 7 6 5
20521
20522
Marking (example only)
YXX
Ordering Information
Device name VESD05A8B-HNH
20719
Dot = Pin 1 marking Y = Type code (see table below) XX = Date code
Ordering code VESD05A8B-HNH-GS08
Taped units per reel (8 mm tape on 7" reel) 3000
Minimum order quantity 15 000
Package Data
Device name Package name Marking Weight code E 3.7 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions
VESD05A8B-HNH LLP1713-9L
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
** Please see document “Vishay Material Category Policy” www.vishay.com/doc?99902
Document Number 81741 Rev. 1.2, 11-Jun-10
For technical support, please contact: ESDProtection@vishay.com
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VESD05A8B-HNH
Vishay Semiconductors Absolute Maximum Ratings
Rating Test conditions BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1 - pin 8) to any other input pin. Pin 9 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9); acc. IEC 61000-4-5; tp = 8/20 µs; single shot BiSy-mode: each input (pin 1 - pin 8) to any other input pin. Pin 9 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot Acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9) ESD-immunity Contact discharge Air discharge Symbol IPPM IPPM PPP PPP VESD VESD VESD VESD TJ TSTG Value 4 3 52 45 ± 17 ± 17 ± 10 ± 10 - 40 to + 125 - 55 to + 150 Unit A A W W kV kV kV kV °C °C
Peak pulse current
Peak pulse power
Contact Acc. IEC 61000-4-2 ; 10 pulses discharge BiSy-mode: each input (pin 1 - pin 8) to any other input pin. Air Pin 9 not connected discharge Junction temperature
Operating temperature Storage temperature
BiAs-Mode (8-line Bidirectional Asymmetrical protection mode)
With the VESD05A8B-HNH up to 8 signal- or data-lines (L1 - L8) can be protected against voltage transients. With pin 9 connected to ground and pin 1 up to pin 8 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A8B-HNH clamping behaviour is Bidirectional and Asymmetrical (BiAs).
L1 L2 L3 L4
1 9 2 3 4 7 6 5 8
L8 L7 L6 L5
20524
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For technical support, please contact: ESDProtection@vishay.com
Document Number 81741 Rev. 1.2, 11-Jun-10
VESD05A8B-HNH
Vishay Semiconductors Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A8B-HNH
BiAs mode: each input (pin 1 - pin 8) to ground (pin 9) Parameter Protection paths Reverse current Max. reverse current Min. reverse breakdown voltage Max. clamping voltage Max. forward clamping voltage Line capacitance at VR = 2.5 V; f = 1 MHz CD 12 14 pF Test conditions/remarks Number of line which can be protected at IR = 0.5 µA at VR = VRWM = 5 V at IR = 1 mA at IPP = 4 A acc. IEC 61000-4-5 at IF = 4 A acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Symbol N lines VRWM IR VBR VC VF CD 20 6 5 0.5 8 13 4.5 23 Min. Typ. Max. 8 Unit lines V µA V V V pF
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the VESD05A8B-HNH can also be used in parallel in order to "multiply" the performance. If two diodes are switched in parallel you get double surge power = double peak pulse current (2 x IPPM) half of the line inductance = reduced clamping voltage half of the line resistance = reduced clamping voltage double line Capacitance (2 x CD) double Reverse leakage current (2 x IR)
L1
1 9 2 3
8 7 6 5
L4
L2
4
L3
20525
Document Number 81741 Rev. 1.2, 11-Jun-10
For technical support, please contact: ESDProtection@vishay.com
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VESD05A8B-HNH
Vishay Semiconductors BiSy-mode (7-line Bidirectional Symmetrical protection mode)
If a bipolar symmetrical protection device is needed the VESD05A8B-HNH can also be used as a seven-line protection device. Therefore seven pins (example: pin 1, 2, 3, 4, 6, 7 and 8) has to be connected to the signalor data-line (L1 - L7) and pin 5 to ground. Pin 9 must not be connected! Positive and negative voltage transients will be clamped in the same way. The clamping current from one data line through the VESD05A8B-HNH to the ground passes one diode in forward direction and the other one in reverse direction. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the VESD05A8B-HNH voltage clamping behaviour is also Bidirectional and Symmetrical (BiSy).
L1 L2 L3 L4
1 9 2 3 4
8 7 6 5
L7 L6 L5
20526_1
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A8B-HNH
BiSy mode: each input (pin 1 - pin 8) to any other input pin connected to ground; pin 9 not connected Parameter Protection paths Reverse current Max. reverse current Min. reverse breakdown voltage Max. clamping voltage Line capacitance at VR = 2.5 V; f = 1 MHz CD 8 10 pF Test conditions/remarks Number of line which can be protected at IR = 0.5 µA at VR = VRWM = 5.5 V at IR = 1 mA at IPP = 3 A acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Symbol Nlines VRWM IR VBR VC CD 10 6.5 5.5 0.5 8.7 15 13 Min. Typ. Max. 7 Unit lines V µA V V pF
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For technical support, please contact: ESDProtection@vishay.com
Document Number 81741 Rev. 1.2, 11-Jun-10
VESD05A8B-HNH
Vishay Semiconductors Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100 100 % 80 % 60 % 20 µs to 50 % 40 % 20 % 0% 0
20548
8 µs to 100 % 10
Pin 9 to Pin 1, 2, 3, 4, 5, 6, 7 or 8
IF (mA)
1
IPPM
0.1
0.01
10
20
30
40
0.001 0.5
20780
0.6
0.7
0.8
0.9
1
Time (µs)
VF (V)
Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
120 % Rise time = 0.7 ns to 1 ns
8 Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9 7 6
Discharge Current IESD
100 % 80 %
5
VR (V)
60 %
53 %
4 3 2 1 0 0.01
40 %
27 %
20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100
20557
0.1
1
10
100
1000 10000
Time (ns)
20781
IR (µA)
Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR
Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF)
25 f = 1 MHz 20 BiAs-mode Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9
14 12 10 8 positive surge
CD (pF)
VC (V)
15
6 4 2
10 0 -2 -4 0 1 2 3 4 5 6
20779
Measured acc. IEC 61000-4-5 (8/20 µs - wave form)
VC
Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9 5 BiSy-mode between two Pins (1 - 8) Pin 9 not connetced
negative surge 0 1 2 3 4 5
0
20778
VR (V)
IPP (A)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP
Document Number 81741 Rev. 1.2, 11-Jun-10
For technical support, please contact: ESDProtection@vishay.com
www.vishay.com 5
VESD05A8B-HNH
Vishay Semiconductors Package Dimensions in millimeters (inches): LLP1713-9L
1.05 (0.041)
0.4 (0.016) bsc
0.23 (0.009) 0.17 (0.007)
0.2 (0.008) x 45°
0.35 (0.014)
0.45 (0.018)
exp. DAP
1.2 (0.047) ref. 1.4 (0.055) 1.3 (0.051)
0.05 (0.002)
0.152 (0.006) ref.
0.24 (0.009)
0.3 (0.012)
0.6 (0.024)
1.75 (0.069) 1.65 (0.065)
Pin 1 marking
Foot print recommendation: 3 x 0.4 = 1.2 (0.047) 0.4 (0.016)
0.15 (0.006)
0.2 (0.008)
0.5 (0.020)
0 (0.000)
0.4 (0.016)
0.4 (0.016)
Solder resist mask
1 (0.039)
Document no.:S8-V-3906.04-001 (4) Created - Date: 28. August 2006 Rev. 1 - Date: 27. May 2008
20386
0.42 (0.017)
Solder pad
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For technical support, please contact: ESDProtection@vishay.com
Document Number 81741 Rev. 1.2, 11-Jun-10
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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