VESD05C-FC1

VISHAY VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for excellent clamping (protection) performance with low leakage current characteristic. 1 2 19120 Features • ESD protection to IEC 61000-4-2 30 kV (air) • ESD protection to IEC 61000-4-2 8 kV (contact) • ESD protection to IEC 61000-4-5 (lightning): 8/20 µs, IPPM = 10 mA • 120 W peak pulse power dissipation per line (8/20 µs) • Suitable for high frequency applications (low capacitance, low parasitic inductance) • Low clamping voltage • Minimum PCB space needed (0.5 mm2), < 0.55 mm height, only 0.47 mg/pcs • No need for underfill material and/or additional solder • Can be assembled using standard SMT pick & place equipment, reflow processes per J-STD-020 and assembly methods • Green product Applications Cellular phones Personal digital assistants (PDA), notebook computers MP3 players GPS Digital cameras Bluetooth Audio amplifiers DVD Power management systems Read write heads for hard drives Modules for watches CPU Digital TV’s and sattelites receivers SMART cards Mechanical Data Case: Flip Chip 1005 Standard EIA chip size: 0402 8 mm tape and reel per EIA-481-1-A/IEC60286 Top contacts: 4 solder bumps 100 µm in height (nominal) Bumps of SnAgCu (lead-free)1) 1) also available with PbSn bumps Document Number 85859 Rev. 1.1, 14-Jul-04 www.vishay.com 1 VESD05C-FC1 Vishay Semiconductors VISHAY Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak pulse power dissipation1) Peak pulse current ESD Air discharge per IEC 61000-4-2 ESD Contact discharge per IEC 61000-4-2 Soldering temperature Soldering time 1) Test condition 8/20 µs pulse 8/20 µs pulse Symbol PPPM IPPM VESD VESD Tsd t Value 120 10 >30 >8 260 10 Unit W A kV kV °C s Non-repetitive current pulse Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operating temperature Storage temperature Test condition Symbol TJ TSTG Value - 55 to + 150 - 55 to + 150 Unit °C °C Electrical Characteristics Reverse Stand-off Voltage Min. Breakdown Voltage VBR VRWM V 5 @ 1 mA V 6 V 9 Max. Clamping Voltage @ IPPM = 1 A @ 8/20 µs VC V 12 @ IPPM = 10 A @ 8/20 µs @ VRWM µA 20 Max. Leakage Current Capacitance @ VR = 0 V, f = 1 MHZ CD pF 75 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 120 IPP - Peak Pulse Current ( % ) 80 CD - Diode Capacitance ( pF ) 8 µs to 100 % 100 80 60 40 20 0 20 µs to 50 % 70 60 50 40 30 20 10 0 0 1 2 f = 1 MHz 0 5 10 15 20 25 30 35 40 19122 3 4 5 6 19121 Time (µs ) VR - Reverse V oltage (V) Figure 1. Pulse Waveform 8/20 µs acc. IEC 61000 - 4 - 5 Figure 2. Typ. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 85859 Rev. 1.1, 14-Jul-04 VISHAY VESD05C-FC1 Vishay Semiconductors 8 V R - Reverse Voltage ( V ) 7 6 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10000 I R - Reverse Current ( µA ) 19123 Figure 3. Reverse Voltage vs. Reverse Current 14 V C - Clamping Voltage ( V ) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 19124 IPP - Peak Pulse Current ( A ) Figure 4. Clamping Voltage vs. Peak Pulse Current Document Number 85859 Rev. 1.1, 14-Jul-04 www.vishay.com 3 VESD05C-FC1 Vishay Semiconductors Package Dimensions in mm (Inches) VISHAY 0.32 (0.013) 0.12 (0.005) 0.96 (0.038) 0.39 (0.015) 0.57 (0.022) 0.485 (0.019) 0.445 (0.017) 0.43 (0.017) 0.37 (0.014) 19119 ISO Method E 0.22 (0.009) 0.08 (0.003) Mounting Pad Layout 0.30 (0.012) ≥ 0.20 (0.008) £ ≥ 0.52 (0.020) 0.30 (0.012) 0.37 (0.014) ≥ 0.20 (0.008) Solder land Solder resist opening Copper area ≤ 0.09 (0.004) www.vishay.com 4 0.42 (0.016) 0.75 (0.030) Document Number 85859 Rev. 1.1, 14-Jul-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to VESD05C-FC1 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85859 Rev. 1.1, 14-Jul-04 www.vishay.com 5