VESD12-02V-G-08

VESDxx-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Low leakage current 1 2 20278 • ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 19344 • e3 - Sn • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 20279 ORDERING INFORMATION DEVICE NAME VESD01-02V VESD03-02V VESD05-02V VESD08-02V VESD12-02V ORDERING CODE VESD01-02V-G-08 VESD03-02V-G-08 VESD05-02V-G-08 VESD08-02V-G-08 VESD12-02V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 3000 3000 3000 3000 3000 MINIMUM ORDER QUANTITY 3000 3000 3000 3000 3000 PACKAGE DATA DEVICE NAME VESD01-02V VESD03-02V VESD05-02V VESD08-02V VESD12-02V PACKAGE NAME SOD-523 SOD-523 SOD-523 SOD-523 SOD-523 TYPE CODE WEIGHT 1.4 mg 1.4 mg 1.4 mg 1.4 mg 1.4 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals . . . . . ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 1 A B C D E VESDxx-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 ABSOLUTE MAXIMUM RATINGS VESD01-02V PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 µs/single shot acc. IEC 61000-4-5, 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 7 63 ±8 ± 15 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD03-02V PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 µs/single shot acc. IEC 61000-4-5, 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 9 108 ±8 ± 15 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD05-02V PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 µs/single shot acc. IEC 61000-4-5, 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 6 120 ±8 ± 15 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD08-02V PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 µs/single shot acc. IEC 61000-4-5, 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 4 120 ±8 ± 15 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD12-02V PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS acc. IEC 61000-4-5, 8/20 µs/single shot acc. IEC 61000-4-5, 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 2 25 ±8 ± 15 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 2 VESDxx-02V Single ESD-Protection Diode in SOD-523 ELECTRICAL CHARACTERISTICS VESD01-02V PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IRmax. at VRWM at IR = 1 mA at IPP (see fig. 1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 1 1.5 TYP. 9 180 MAX. 1 100 UNIT lines V µA V V pF Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD03-02V PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IRmax. at VRWM at IR = 1 mA at IPP (see fig. 1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 3 4 TYP. 12 110 MAX. 1 20 UNIT lines V µA V V pF ELECTRICAL CHARACTERISTICS VESD05-02V PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IRmax. at VRWM at IR = 1 mA at IPP (see fig. 1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 5 6.5 TYP. 20 55 MAX. 1 0.1 UNIT lines V µA V V pF ELECTRICAL CHARACTERISTICS VESD08-02V PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IRmax. at VRWM at IR = 1 mA at IPP (see fig. 1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 8 9 TYP. 30 35 MAX. 1 0.1 UNIT lines V µA V V pF ELECTRICAL CHARACTERISTICS VESD12-02V PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IRmax. at VRWM at IR = 1 mA at IPP (see fig. 1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 12 14 TYP. 25 30 MAX. 1 0.1 UNIT lines V µA V V pF Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 3 VESDxx-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 PACKAGE DIMENSIONS in millimeters (inches): SOD-523 0.7 (0.028) 0.9 (0.035) 0.7 (0.028) 0.4 (0.016) 1.7 (0.067) 1.5 (0.059) 0.1 (0.004) max. 0.20 (0.008) 0.08 (0.003) foot print recommendation: 0.35 (0.014) 0.18 (0.007) 1.45 (0.057) 1.3 (0.051) 1.1 (0.043) Document no.: S8-V-3880.02-001 (4) Rev. h - Date: 13. Oct. 2010 16864 0.5 (0.020) 0.35 (0.014) Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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