New Product
VF20M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.55 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
1 VF20M120C
PIN 1 PIN 3 PIN 2
2
3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VF20M120C 120 20 A 10 120 10 000 1500 - 40 to + 150 A V/μs V °C UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rating of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range
Revision: 11-Jan-12
Document Number: 89469 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VF20M120C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode IF = 10 A IF = 5 A IF = 10 A VR = 90 V Reverse current per diode VR = 120 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 20 ms TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL TYP. 0.65 0.82 0.55 0.64 3 1.5 4 MAX. 0.91 0.72 700 25 μA mA μA mA V UNIT
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC VF20M120C 5.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE ITO-220AB PREFERRED P/N VF20M120C-M3/4W UNIT WEIGHT (g) 1.75 PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
25 Resistive or Inductive Load 20
9.0 8.0 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 1.0 D = 0.8
Average Power Loss (W)
7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0
15
10
T
5 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175
D = tp/T
0 1 2 3 4 5 6 7 8 9
tp
10 11 12
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Jan-12
Document Number: 89469 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VF20M120C
www.vishay.com
100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000
Vishay General Semiconductor
Instantaneous Forward Current (A)
10
TA = 150 °C TA = 125 °C TA = 100 °C
1
Junction Capacitance (pF)
100
TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10 0.1 1 10 100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100 10 1 0.1 0.01 TA = 25 °C 0.001 0.0001 20 40 60 80 100 TA = 150 °C TA = 125 °C TA = 100 °C
10 Junction to Case
1
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF.
7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54)
45° REF.
0.600 (15.24) 0.580 (14.73)
PIN
0.671 (17.04) 0.651 (16.54)
7° REF. 0.350 (8.89) 0.330 (8.38)
1
2
3
7° REF.
0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41)
0.191 (4.85) 0.171 (4.35)
0.110 (2.79) 0.100 (2.54)
0.057 (1.45) 0.045 (1.14)
0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95)
0.028 (0.71) 0.020 (0.51)
Revision: 11-Jan-12
Document Number: 89469 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000