VFT1060C

New Product VFT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1060C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 60 V 100 A 0.50 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VFT1060C 60 10 A 5 100 10 000 1500 - 55 to + 150 A V/μs V °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89253 Revision: 18-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VFT1060C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A Instantaneous forward voltage per diode IF = 5.0 A IF = 2.5 A IF = 5.0 A Reverse current per diode VR = 60 V TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.49 0.58 0.39 0.50 IR (2) 6.6 MAX. 0.70 V 0.60 700 25 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VFT1060C 6.5 °C/W 5.0 UNIT ORDERING INFORMATION (Example) PACKAGE ITO-220AB PREFERRED P/N VFT1060C-M3/4W UNIT WEIGHT (g) 1.75 PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 4.0 Average Forward Rectified Current (A) 10 Average Power Disspation (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 D = 0.1 D = 0.5 D = 0.3 D = 0.2 D = 0.8 8 6 D = 1.0 T 4 2 Mounted on Specific Heatsink D = tp/T tp 0 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89253 Revision: 18-Nov-10 New Product VFT1060C Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 Junction to Case 0.01 TA = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Transient Thermal Impedance 100 10 000 Instantaneous Reverse Current (mA) 10 TA = 125 °C 1 TA = 100 °C Junction Capacitance (pF) TA = 150 °C 1000 0.1 100 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 90 100 10 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 45° REF. 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 2 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Document Number: 89253 Revision: 18-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1