VFT2060C

VFT2060C

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VFT2060C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
VFT2060C 数据手册
New Product VFT2060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT2060C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 60 V 150 A 0.52 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VFT2060C 60 20 A 10 150 10 000 1500 - 55 to + 150 A V/μs V °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89254 Revision: 18-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VFT2060C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A Instantaneous forward voltage per diode IF = 10 A IF = 5.0 A IF = 10 A Reverse current per diode VR = 60 V TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.49 0.57 0.40 0.52 IR (2) 14 MAX. 0.65 V 0.59 850 40 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VFT2060C 6.0 °C/W 4.8 UNIT ORDERING INFORMATION (Example) PACKAGE ITO-220AB PREFERRED P/N VFT2060C-M3/4W UNIT WEIGHT (g) 1.76 PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 10 Average Forward Rectified Current (A) 20 Average Power Disspation (W) 9 8 7 6 5 4 3 2 1 0 D = 0.1 D = 0.5 D = 0.3 D = 0.2 D = 0.8 16 12 D = 1.0 8 T 4 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 D = tp/T 0 2 4 6 8 tp 10 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89254 Revision: 18-Nov-10 New Product VFT2060C Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 150 °C Junction to Case 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Transient Thermal Impedance 100 10 000 TA = 150 °C TA = 125 °C Instantaneous Reverse Current (mA) 10 Junction Capacitance (pF) 1 TA = 100 °C 1000 0.1 100 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 90 100 10 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 45° REF. 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 2 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Document Number: 89254 Revision: 18-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
VFT2060C
1. 物料型号: - VFT2060C

2. 器件简介: - VFT2060C是Vishay General Semiconductor生产的双高电压沟槽MOS势垒肖特基整流器,采用Trench MOS Schottky技术,具有超低的正向电压降(Ultra Low Vf),在5A电流下仅为0.40V。

3. 引脚分配: - PIN 1 和 PIN 2,具体极性在文档中有标记。

4. 参数特性: - 正向平均电流IF(AV)为2 x 10A,反向峰值电压VRRM为60V,正向浪涌电流IFSM为150A,正向电压VF在10A电流下为0.52V,最大结温TJ为150°C。

5. 功能详解: - 该器件适用于高频DC/DC转换器、开关电源、飞轮二极管、或门二极管和反向电池保护等应用。

6. 应用信息: - 用于高频率的DC/DC转换器、开关电源、飞轮二极管、或门二极管和反向电池保护。

7. 封装信息: - 封装型号为ITO-220AB,封装材料满足UL 94 V-0可燃性等级,器件重量为1.76克,包装代码为4W,基础数量为50/管,交付方式为管装。
VFT2060C 价格&库存

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