VI20120C

VI20120C

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VI20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A...

  • 详情介绍
  • 数据手册
  • 价格&库存
VI20120C 数据手册
New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF20120C PIN 1 PIN 3 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS 1 TO-263AB K K TO-262AA 2 1 1 VB20120C PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA VI20120C PIN 1 PIN 3 PIN 2 K Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V20120C VF20120C VB20120C VI20120C UNIT V A A V °C 120 20 10 120 1500 - 40 to + 150 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89040 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 1 0 A IF = 5 A IF = 1 0 A V R = 90 V Reverse current per diode (2) VR = 120 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR TYP. 120 (minimum) 0.62 0.81 0.54 0.64 8 6 IR 14 MAX. 0.90 V 0.72 700 45 µA mA µA mA UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V20120C 2.8 VF20120C 5.0 VB20120C 2.8 VI20120C 2.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20120C-E3/4W VF20120C-E3/4W VB20120C-E3/4W VB20120C-E3/8W VI20120C-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.37 1.37 1.45 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 10 Resistive or Inductive Load V(B,I)20120C D = 0.5 D = 0.3 6 D = 0.2 4 D = 0.1 T 2 D = tp/T 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 tp D = 1.0 D = 0.8 Average Forward Rectified Current (A) 15 VF20120C 10 5 Mounted on specific Heatsink 0 Average Power Loss (W) 20 8 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89040 Revision: 19-May-08 New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 °C TA = 125 °C TA = 100 °C 10 1 TA = 25 °C V(B,I)20120C 1 0.01 0.1 1 10 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 Junction to Case 1 0.01 TA = 25 °C VF20120C 0.1 0.01 0.1 1 10 100 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Junction Capacitance (pF) 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89040 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45° REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 1 2 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-262AA 0.411 (10.45) MAX. 0.250 (6.35) MIN. K 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 30° (TYP.) (REF.) 0.950 (24.13) 0.920 (23.37) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 0.510 (12.95) 0.470 (11.94) 3 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 3 PIN 2 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89040 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
VI20120C
PDF文档中包含的物料型号为:MAX31855KASA+。

器件简介指出MAX31855是一款用于测量冷端温度和热端温度的数字输出热电偶数字转换器。

引脚分配包括VCC、GND、SO、CS、CLK、T-、T+、REF+、REF-。

参数特性包括供电电压范围2.0V至5.5V、工作温度范围-40℃至+125℃、精度±1℃。

功能详解说明了MAX31855能够通过SPI接口与微处理器通信,支持多种热电偶类型,具有冷端补偿功能。

应用信息显示该器件适用于工业过程控制、医疗设备、环境监测等领域。

封装信息为TSSOP-16封装。
VI20120C 价格&库存

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