New Product
V30100S, VF30100S, VB30100S, VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance
3 2 V30100S
PIN 1 PIN 2 CASE
1
1 VF30100S
PIN 1 PIN 2
2
3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
PIN 3
PIN 3
TO-263AB K K
TO-262AA
TYPICAL APPLICATIONS
A NC 1 VB30100S
NC A K HEATSINK
2
3
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VI30100S
PIN 1 PIN 2 K
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 100 V 250 A 0.69 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 88941 Revision: 23-Oct-09 SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V30100S VF30100S VB30100S 100 30 250 230 1.0 10 000 1500 - 40 to + 150 VI30100S UNIT V A A mJ A V/μs V °C www.vishay.com 1
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
New Product
V30100S, VF30100S, VB30100S, VI30100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Breakdown voltage TEST CONDITIONS IR = 10 mA IF = 5 A IF = 10 A Instantaneous forward voltage IF = 30 A IF = 5 A IF = 10 A IF = 30 A VR = 70 V Reverse current VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) TA = 25 °C SYMBOL VBR TYP. 105 (minimum) 0.47 0.55 0.80 0.39 0.49 0.69 27 11 70 23 MAX. 0.91 0.78 1000 45 μA mA μA mA V UNIT V
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RθJC V30100S 2.0 VF30100S 4.0 VB30100S 2.0 VI30100S 2.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V30100S-E3/4W VF30100S-E3/4W VB30100S-E3/4W VB30100S-E3/8W VI30100S-E3/4W UNIT WEIGHT (g) 1.875 1.805 1.380 1.380 1.455 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35 Resistive or Inductive Load 30 25 VF30100S 20 15 10 5 0 0 25 50 75 100 125 150 Mounted on Specific Heatsink V(B,I)30100S 32 D = 0.5 D = 0.8 28 D = 0.3 D = 0.2 D = 0.1 D = 1.0
Average Forward Current (A)
Average Power Loss (W)
24 20 16 12
T 8 4 D = tp/T 0 0 4 8 12 16 20 24 28 32 36 tp
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve www.vishay.com 2
Fig. 2 - Forward Power Loss Characteristics Document Number: 88941 Revision: 23-Oct-09
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
New Product
V30100S, VF30100S, VB30100S, VI30100S
Vishay General Semiconductor
100
10
TA = 150 °C 10 TA = 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
1
0.1
TA = 25 °C 1
0.01
V(B,I)30100S 0.001 0.01 0.1 1 10 100
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
1000
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
100 TA = 150 °C 10 TA = 125 °C
1
0.1 TA = 25 °C
0.01
VF30100S 1 0.01 0.1 1 10 100
0.001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
10 000
Junction Capacitance (pF)
1000
100 0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Document Number: 88941 Revision: 23-Oct-09
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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New Product
V30100S, VF30100S, VB30100S, VI30100S
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45° REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF.
7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54)
0.600 (15.24) 0.580 (14.73)
PIN
0.671 (17.04) 0.651 (16.54)
7° REF. 0.350 (8.89) 0.330 (8.38)
1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45)
PIN 2
1
2
3
7° REF.
0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41)
0.191 (4.85) 0.171 (4.35)
0.110 (2.79) 0.100 (2.54)
0.057 (1.45) 0.045 (1.14)
0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95)
0.028 (0.71) 0.020 (0.51)
TO-262AA
0.411 (10.45) MAX. 0.250 (6.35) MIN.
K
0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14)
30° (TYP.) (REF.)
0.950 (24.13) 0.920 (23.37) 1
0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14)
PIN 2
0.510 (12.95) 0.470 (11.94) 3
0.350 (8.89) 0.330 (8.38)
0.401 (10.19) 0.381 (9.68)
0.110 (2.79) 0.100 (2.54)
0.560 (14.22) 0.530 (13.46)
0.104 (2.65) 0.096 (2.45)
0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95)
0.022 (0.56) 0.014 (0.35)
TO-263AB
0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) NC K A 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85) 0.591 (15.00)
0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41)
0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79)
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88941 Revision: 23-Oct-09
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Vishay
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Document Number: 91000 Revision: 11-Mar-11
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