VLMKE3401-GS08

VLMKE340. Vishay Semiconductors Bicolor SMD LED PLCC-4 FEATURES • SMD LED with exceptional brightness • Multicolored • Luminous intensity categorized e3 • EIA and ICE standard package • Compatible with automatic placement equipment • Suitable for IR reflow and TTW soldering • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free product - RoHS compliant lead (Pb)-free soldering • JEDEC level 2a APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use 19211 DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMKE340. is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: bicolor • Angle of half intensity: ± 60° PARTS TABLE PART VLMKE3400-GS08 VLMKE3400-GS18 VLMKE3401-GS08 VLMKE3401-GS18 COLOR, LUMINOUS INTENSITY Red/yellow, IV > 56 mcd Red/yellow, IV > 56 mcd Red/yellow, IV > 71 mcd Red/yellow, IV > 71 mcd TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Document Number 81229 Rev. 1.1, 30-Aug-07 www.vishay.com 1 VLMKE340. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) VLMKE340. PARAMETER Reverse voltage per diode2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) TEST CONDITION IR = 10 µA Tamb ≤ 80 °C tp ≤ 10 µs SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 6 30 0.1 80 125 - 40 to + 100 - 40 to + 100 560 UNIT V mA A mW °C °C °C K/W Note: 1) T amb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., RED PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz PART VLMKE3400 VLMKE3401 SYMBOL IV IV λd λp ϕ VF VR Cj 6 15 MIN 56 71 630 643 ± 60 1.9 2.6 TYP. MAX 180 140 UNIT mcd mcd nm nm deg V V pF Note: 1) Tamb = 25 °C, unless otherwise specified OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., YELLOW PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz PART VLMKE3400 VLMKE3401 SYMBOL IV IV λd λp ϕ VF VR Cj 6 15 MIN 90 112 581 588 590 ± 60 2 2.6 TYP. MAX 280 224 594 UNIT mcd mcd nm nm deg V V pF Note: 1) Tamb = 25 °C, unless otherwise specified www.vishay.com 2 Document Number 81229 Rev. 1.1, 30-Aug-07 VLMKE340. Vishay Semiconductors LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS TLMKE34..1) RED P2 56...71 mcd Q2 90...112 mcd Y E L L O W R1 112...140 mcd R2 140...180 mcd S1 180...224 mcd S2 224...280 mcd Note: 1) followed by 00 or 01 00 00 00 00 00 Q1 71...90 mcd 00 00 01 00 01 00 01 00 Q2 90...112 mcd 00 00 01 00 01 00 01 00 R1 112...140 mcd 00 00 01 00 01 00 01 00 R2 140...180 mcd 00 00 00 00 00 COLOR CLASSIFICATION DOMINANT WAVELENGTH (NM) GROUP MAX 1 2 3 4 5 6 581 583 585 587 589 591 YELLOW MAX 584 586 588 590 592 594 TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 40 35 IF - Forward Current (mA) 30 25 20 1 chip on 15 10 5 0 0 19476 1000 tP/T = 0.01 60 °C 2 chips on 80 °C IFM - Forward Current (mA) 0.02 0.05 0.1 100 0.2 0.5 1 10 0.01 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 0.1 1 10 100 16621 tP - Pulse Length (ms) Figure 1. Forward Current vs. Ambient Temperature for InGaN Figure 2. Forward Current vs. Pulse Duration Document Number 81229 Rev. 1.1, 30-Aug-07 www.vishay.com 3 VLMKE340. Vishay Semiconductors 0° 10° 20° 30° IV rel - Relative Luminous Intensity 2.0 IV rel - Relative Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 16618-1 Red 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 100 10 IV rel - Relative Luminous Intensity Yellow/Red IF - Forward Current (mA) Yellow/Red 1.0 10 0.1 1 1.0 95 10878-1 0.01 1.5 2.0 2.5 3.0 1 96 11588-1 VF - Forward Voltage (V) 10 IF - Forward Current (mA) 100 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Luminous Intensity vs. Forward Current 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 95 10880-1 IF = 20 mA Yellow I rel - Relative Intensity 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 1.2 1.1 Red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 λ - Wavelength (nm) IV rel - Relative Luminous Intensity 96 12075-1 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature Figure 8. Relative Intensity vs. Wavelength www.vishay.com 4 Document Number 81229 Rev. 1.1, 30-Aug-07 VLMKE340. Vishay Semiconductors 1.2 1.1 IF = 20 mA Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 λ - Wavelength (nm) VF rel - Relative Forward Voltage (V) 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 0 10 20 30 40 50 60 70 80 90 100 IF = 20 mA Yellow IV rel - Relative Luminous Intensity 95 10881-1 16616 Tamb - Ambient Temperature (°C) Figure 9. Relative Intensity vs. Wavelength Figure 11. Relative Forward Voltage vs. Ambient Temperature 2.10 V Frel - Relative Forward Voltage 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0 I F = 20 mA Red 10 20 30 40 50 60 70 80 90 100 16617 Tam b - Ambient Temperature (°C) Figure 10. Relative Forward Voltage vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 4 1.2 2.6 (2.8) 0.5 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering) 19899 Document Number 81229 Rev. 1.1, 30-Aug-07 4 www.vishay.com 5 VLMKE340. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM.3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 120° 10.0 9.0 Adhesive Tape 4.5 3.5 2.5 1.5 Blister Tape 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity Component Cavity 94 8670 180 178 14.4 max. 94 8665 TAPING OF VLM.3... 3.5 3.1 2.2 2.0 Figure 13. Reel dimensions - GS08 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED 10.4 8.4 120° 0.25 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 94 8668 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Figure 12. Tape dimensions in mm for PLCC-2 Identification Label: Vishay Type Group Tape Code Production Code Quantity 321 329 14.4 max. 18857 Figure 14. Reel dimensions - GS18 www.vishay.com 6 Document Number 81229 Rev. 1.1, 30-Aug-07 VLMKE340. Vishay Semiconductors SOLDERING PROFILE IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a 300 255 °C 255°C 240 °C 217 °C max. 260 °C 245 °C 250 Temperature (°C) 200 max. 30 s 150 max. 120 sec max. 100 sec 100 max. Ramp Up 3 °C/sec max. Ramp Down 6 °C/sec 50 0 0 19470-2 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed Figure 15. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 100 Time (s) 150 200 250 2 K/s forced cooling ca. 5 K/s 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C second wave ca. 2 K/s full line: typical dotted line: process limits 5s (acc. to CECC00802) 948626-1 Lead Temperature RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags. LEVEL This bag contains MOISTURE –SENSITIVE DEVICES CAUTION 2a 1. Shelf life in sealed bag 12 months at