VLMPG32..
Vishay Semiconductors
Power SMD LED PLCC-4
FEATURES • Available in 8 mm tape • High brightness SMD LED • Luminous intensity and color categorized e3 per packing unit • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Suitable for all soldering methods according to CECC 00802 and J-STD-020C • Preconditioning: acc. to JEDEC level 2a • Qualified according to JEDEC moisture sensitivity level 2a • Automotive qualified: AEC-Q101 • Lead (Pb)-free device • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Compatible with IR reflow solder processes according to CECC 00802 and J-STD-020C APPLICATIONS • Interior and exterior lighting • Indicator and backlighting purposes for audio, video, LCDs, switches, symbols, illuminated advertising etc. • Illumination purpose, alternative to incandescent lamps • General use
19210
DESCRIPTION The VLMPG32.. is an advanced development in terms of heat dissipation. The leadframe profile of this PLCC-4 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay’s high intensity SMD LED in PLCC-2 package. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: power • Angle of half intensity: ± 60°
PARTS TABLE
PART VLMPG32P1Q1-GS08 COLOR, LUMINOUS INTENSITY Pure green, IV = (45 to 90) mcd TECHNOLOGY AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS 1) VLMPG32..
PARAMETER Reverse voltage Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ambient mounted on PC board FR4 Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application Document Number 81868 Rev. 1.0, 05-May-08 www.vishay.com 1
2)
TEST CONDITION
SYMBOL VR IF Ptot Tj Tamb Tstg RthJA
VALUE 12 70 180 125 - 40 to + 100 - 40 to + 100 290
UNIT V mA mW °C °C °C K/W
VLMPG32..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMPG32.., PURE GREEN
PARAMETER Luminous intensity
2)
TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V
PART
INCLUDED VLMPG32P1
SYMBOL IV IV IV λd Δλ ϕ VF IR
MIN. 45 56 71 555.5
TYP.
MAX. 56 71 90 564.5
UNIT mcd mcd mcd nm nm deg
VLMPG32P1Q1 VLMPG32P2 VLMPG32Q1
Dominant wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
3)
18 ± 60 2.1 0.01 2.6 10
V µA
Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltages are tested at a current pulse duration of 1 ms and a tolerance of ± 0.1 V
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD P1 P2 Q1 LIGHT INTENSITY (mcd) MIN. 45 56 71 MAX. 56 71 90
COLOR CLASSIFICATION
PURE GREEN GROUP X Y Z DOM. WAVELENGTH (nm) MIN. 555.5 558.5 561.5 MAX. 558.5 561.5 564.5
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
CROSSING TABLE
VISHAY VLMPG32P1Q1 OSRAM LPE675-P1Q1
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
80 100 90
IF - Forward Current (mA)
70
IF - Forward Current (mA)
80 70 60 50 40 30 20 10 0
60 50 40 30 20 10 0 0 25 50 75 100 125
1.5
1.7
1.9
2.1
2.3
2.5
21347
Tamb - Ambient Temperature (°C)
21348
VF - Forward Voltage (V)
Figure 1. Max. Permissible Forward Current vs. Ambient Temperature
Figure 2. Forward Current vs. Forward Voltage
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Document Number 81868 Rev. 1.0, 05-May-08
VLMPG32..
Vishay Semiconductors
ΔVF - Change of Forward Voltage (mV)
1.2 1.0 0.5 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 0 10 20 30 40 50 60 70 80 90 100 110
Irel - Relative Intensity
0.8 0.6 0.4 0.2 0.0 450 475 500 525 550 575 600 625 650
21172
λ - Wavelength ( nm )
21174
IF - Forward Current (mA)
Figure 3. Relative Intensity vs. Wavelength
Figure 6. Change of Forward Voltage vs. Forward Current
Δλd - Change of Dom. Wavelength (nm)
0°
10°
20° 30°
IV rel - Relative Luminous Intensity
3 2 1 0 -1 -2 -3 0 10 20 30 40 50 60 70 80 90 100 110
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0
95 10319
ϕ - Angular Displacement
21175
IF - Forward Current (mA)
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Figure 7. Change of Dominant Wavelength vs. Forward Current
2.0
3.0
IV rel - Relative Luminous Intensity
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 90 100 110
IV rel - Relative Luminous Intensity
2.5 2.0 1.5 1.0 0.5 0 - 50 - 25 0 25 50 75 100 125
21173
IF - Forward Current (mA)
21176
Tamb - Ambient Temperature (°C)
Figure 5. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Lum. Intensity vs. Ambient Temperature
Document Number 81868 Rev. 1.0, 05-May-08
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VLMPG32..
Vishay Semiconductors
Δλd - Change of Dom. Wavelength (nm)
10 8 6 4 2 0 -2 -4 -6 -8 - 10 - 50 - 25 0 25 50 75 100 125
ΔVF - Change of Forward Voltage (mV)
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 250 - 50 - 25 0 25 50 75 100 125
21177
Tamb - Ambient Temperature (°C)
21178
Tamb - Ambient Temperature (°C)
Figure 9. Change of Dominant Wavelength vs. Ambient Temperature
Figure 10. Change of Forward Voltage vs. Ambient Temperature
REEL DIMENSIONS in millimeters
GS08 = 2000 pcs
20983
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Document Number 81868 Rev. 1.0, 05-May-08
VLMPG32..
Vishay Semiconductors
TAPING DIMENSIONS in millimeters
21241
Document Number 81868 Rev. 1.0, 05-May-08
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VLMPG32..
Vishay Semiconductors
PACKAGE/SOLDERING PADS DIMENSIONS in millimeters
21240
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Document Number 81868 Rev. 1.0, 05-May-08
VLMPG32..
Vishay Semiconductors
SOLDERING PROFILE
IR Reflow Soldering Profile for Lead (Pb)-free Soldering
Preconditioning acc. to JEDEC Level 2a
BAR CODE PRODUCT LABEL EXAMPLE:
300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0
19885
106
255 °C 240 °C 217 °C max. 260 °C 245 °C
E
F
max. 100 s
37
max. ramp up 3 °C/s
max. ramp down 6 °C/s
21026
B
50 100 150 Time (s) 200 250 300 max. 2 cycles allowed
CA
G
D
Figure 11. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B)
TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 235 °C to 260 °C first wave ca. 200 K/s 100 °C to 130 °C 5s
(acc. to CECC00802)
948626-1
lead temperature second wave ca. 2 K/s full line: typical dotted line: process limits
A) Type of component B) PTC = manufacturing plant C) SEL - selection code (bin): e.g.: K2 = code for luminous intensity group 4 = code for color group D) Batch/date code E) Total quantity F) Company code G) Code for lead (Pb)-free classification (e3)
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
200
250
Figure 12. Double Wave Soldering of Opto Devices (all Packages)
Document Number 81868 Rev. 1.0, 05-May-08
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VLMPG32..
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at
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