VLMRY3420
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES • SMD LED with exceptional brightness • Multicolored • Luminous intensity categorized e3 • EIA and ICE standard package • Compatible with automatic placement equipment • Compatible with IR reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020C • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free device • Preconditioning: according to JEDEC level 2a • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use
19211
DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMRY3420 is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a amber and yellow chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: bicolor • Angle of half intensity: ± 60° PARTS TABLE
PART VLMRY3420-GS08 VLMRY3420-GS18
COLOR, LUMINOUS INTENSITY Amber, IV = (355 to 900) mcd Yellow, IV = (560 to 1120) mcd Amber, IV = (355 to 900) mcd Yellow, IV = (560 to 1120) mcd
TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMRY3420
PARAMETER Reverse voltage per diode2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) 1 chip on 2 chips on TEST CONDITION IR = 10 µA Tamb ≤ 65 °C SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 5 50 0.1 130 125 - 40 to + 100 - 40 to + 100 480 650 UNIT V mA A mW °C °C °C K/W
Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMRY3420, AMBER
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance Note: 1) Tamb = 25 °C, unless otherwise specified TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V, VR = 0, f = 1 MHz PART VLMRY3420 SYMBOL IV λd λp ϕ VF IR Cj 15 MIN 355 617 624 ± 60 2.1 2.6 10 TYP. MAX 900 UNIT mcd nm nm deg V µA pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMRY3420, YELLOW
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V VR = 0, f = 1 MHz PART VLMRY3420 SYMBOL IV λd λp ϕ VF IR Cj 15 MIN 560 581 588 590 ± 60 2.1 2.6 10 TYP. MAX 1120 594 UNIT mcd nm nm deg V µA pF
CROSSING TABLE
VISHAY VLMRY3420 OSRAM LAYT67B
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, VLMRY34201)
RED T2 355 to 450 mcd Y E L L O W
1)
U1 450 to 560 mcd VLMRY3420 VLMRY3420 VLMRY3420
U2 560 to 710 mcd VLMRY3420 VLMRY3420 VLMRY3420
V1 710 to 900 mcd VLMRY3420 VLMRY3420 VLMRY3420
U2 560 to 710 mcd V1 710 to 900 mcd V2 900 to 1120 mcd
VLMRY3420 VLMRY3420 VLMRY3420
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM) GROUP MIN 1 2 3 4 5 6 581 583 585 587 589 591 YELLOW MAX 584 586 588 590 592 594
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
60 IF -Forward Current (mA) 50 40 2 chips on 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120
20087
0.12 0.10 0.08 0.06 0.04 0.02 for one chip operation only 101 102 tp/T = 0.005 0.05 0.5
1 chip on
Tam b -Ambient Temperature (°C)
0.00 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 20085 tp - Pulse Length (s)
Figure 1. Forward Current vs. Ambient Temperature
Document Number 81304 Rev. 1.2, 06-Sep-07
I F - Forward Current (A)
Figure 2. Forward Current vs. Pulse Duration
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VLMRY3420
Vishay Semiconductors
0°
10°
20° 30°
IV rel - Relative Luminous Intensity
100 90 I F - Forward Current (mA) 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F - Forward Voltage (V) amber yellow
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
20170
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Forward Voltage vs. Ambient Temperature
1.2
10 IV rel - Relative Luminous Intensity
yellow
IV rel - Relative Luminous Intensity
yellow
1.0 0.8 0.6 0.4 0.2 0.0 540
1
0.1
0.01
560 5 80 600 620 640
17018
1
10 IF - Forward Current (mA)
100
16008
λ - Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
10.00 I Vrel - Relative Luminous Intensity Amber Amber
I Vrel - Relative Luminous Intensity
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
1.00
0.10
570 580 590 600 610 620 630 640 650 660 670
20171
0.01 1.00
20172
10.00 IF - Forward Current (mA)
100.00
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
Figure 8. Relative Luminous Intensity vs. Forward Current
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
- Change of Dom. Wavelength (nm)
2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50
17016
6 Amber 4 2 0 -2 -4 -6 - 50
- 25
0 25 50 75 Tamb - Ambient Temperature (°C)
100
d
20173
- 25 0 25 50 75 100 Tamb - Ambient Temperature (°C)
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Change of Dominant Wavelength vs. Ambient Temperature
Δ VF - Change of Forward Voltage (mV)
2.5
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100
I Vrel -Relative Luminous Intensity
Amber 2.0 1.5 1.0 0.5 0.0 - 50
30 mA 50 mA yellow
10 mA
20174
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
17015
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 13. Change of Forward Voltage vs. Ambient Temperature
- Change of Dom. Wavelength (nm)
yellow
4 2 0 -2 -4 -6 - 50
VF - Change of Forward Voltage (mV)
6
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 10 mA 30 mA 50 mA Amber
d
17017
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
20175
Figure 11. Change of Dominant Wavelength vs. Ambient Temperature
Figure 14. Change of Forward Voltage vs. Ambient Temperature
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
PACKAGE DIMENSIONS
Mounting Pad Layout
4 1.2 2.6 (2.8) 0.5 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering)
19899
METHOD OF TAPING/POLARITY AND TAPE AND REEL TAPING OF VLM.3... SMD LED (VLM.3 - SERIES) Vishay’s LEDs in SMD packages are available in an 3.5 antistatic 8 mm blister tape (in accordance with 3.1 DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape.
4
2.2 2.0
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
Adhesive Tape
1.6 1.4 4.1 3.9
2.05 1.95
4.1 3.9
0.25
Blister Tape
94 8668
Figure 15. Tape Dimensions in mm for PLCC-2
Component Cavity
94 8670
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
120°
10.0 9.0
120°
10.4 8.4
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Identification Label: Vishay Type Group Tape Code Production Code Quantity
180 178
14.4 max.
94 8665
321 329
14.4 max.
18857
Figure 16. Reel Dimensions - GS08
Figure 17. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
255 °C 255°C 240 °C 217 °C max. 260 °C 245 °C
TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
250 Temperature (°C)
200
max. 30 s
150
max. 120 sec max. 100 sec
100
max. Ramp Up 3 °C/sec max. Ramp Down 6 °C/sec
2 K/s forced cooling 0 50 100 Time (s) 150
ca. 5 K/s
50
0 0
19470-2
200
250
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 18. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
Figure 19. Double Wave Soldering of Opto Devices (all Packages)
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at
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