VLMSY3420
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES • SMD LED with exceptional brightness • Multicolored • Luminous intensity categorized e3 • EIA and ICE standard package • Compatible with automatic placement equipment • Compatible with IR reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020C • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free device • Preconditioning: according to JEDEC level 2a • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Automotive qualified AEC-Q101 APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use
19211
DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMSY3420 is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: bicolor • Angle of half intensity: ± 60° PARTS TABLE
PART VLMSY3420-GS08 VLMSY3420-GS18
COLOR, LUMINOUS INTENSITY Red, IV = (224 to 900) mcd Yellow, IV = (280 to 1120) mcd Red, IV = (224 to 900) mcd Yellow, IV = (280 to 1120) mcd
TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs
Document Number 81305 Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
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VLMSY3420
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS 1) VLMSY3420
PARAMETER Reverse voltage per diode 2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) 1 chip on 2 chips on TEST CONDITION IR = 10 µA Tamb ≤ 65 °C SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 5 50 0.1 130 125 - 40 to + 100 - 40 to + 100 480 650 UNIT V mA A mW °C °C °C K/W
Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, SUPERRED
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance Note: 1) Tamb = 25 °C, unless otherwise specified TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V, VR = 0 V, f = 1 MHz PART VLMSY3420 SYMBOL IV λd λp ϕ VF IR Cj 15 MIN. 224 630 643 ± 60 2.1 2.6 10 TYP. MAX. 900 UNIT mcd nm nm deg V µA pF
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, YELLOW
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance Note: 1) Tamb = 25 °C, unless otherwise specified TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V, VR = 0 V, f = 1 MHz PART VLMSY3420 SYMBOL IV λd λp ϕ VF IR Cj 15 MIN. 280 581 588 590 ± 60 2.1 2.6 10 TYP. MAX. 1120 594 UNIT mcd nm nm deg V µA pF
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Document Number 81305 Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS 1) VLMSY3420
RED S2 224 to 280 mcd T1 280 to 355 mcd Y E L L O W T2 355 to 450 mcd U1 450 to 560 mcd U2 560 to 710 mcd V1 710 to 900 mcd V2 900 to 1120 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 T1 280 to 355 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 T2 355 to 450 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 U1 450 to 560 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 U2 560 to 710 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 V1 710 to 900 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420
Note: 1) Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (nm) GROUP MIN. 1 2 3 4 5 6 581 583 585 587 589 591 YELLOW MAX. 584 586 588 590 592 594
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
60 IF -Forward Current (mA) 50 40 2 chips on 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120
20087
0.12 0.10 0.08 0.06 0.04 0.02 for one chip operation only 101 102 tp/T = 0.005 0.05 0.5
1 chip on
Tam b -Ambient Temperature (°C)
0.00 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 20085 tp - Pulse Length (s)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Document Number 81305 Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
I F - Forward Current (A)
Figure 2. Forward Current vs. Pulse Duration
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VLMSY3420
Vishay Semiconductors
0°
10°
20° 30°
IV rel - Relative Luminous Intensity
100
ϕ - Angular Displacement
90 IF - Forward Current (mA) 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 VF - Forward Voltage (V) superred yellow
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0
95 10319
20090
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Forward Voltage vs. Ambient Temperature
1.2 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity yellow 1.0 0.8 0.6 0.4 0.2 0.0 540
16008
10 yellow
1
0.1
0.01 560 580 600 620 640
17018
1
10 IF - Forward Current (mA)
100
λ - Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
10 IV rel - Relative Luminous Intensity
super red
IV rel - Relative Luminous Intensity
1.0 0.8 0.6 0.4 0.2
super red
1
0
0.0 600
17045_1
0.01
620 640 660 680 700
17042
1
10 IF - Forward Current (mA)
100
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
Figure 8. Relative Luminous Intensity vs. Forward Current
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For technical support, please contact: LED@vishay.com
Document Number 81305 Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
Δ λ d - Change of Dom. W avelength (nm)
2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50
17016
3 2 1 0 -1 -2 -3 -4 -5 - 50 - 25 0 25 50 75 100 superred
- 25
0 25 50 75 Tamb - Ambient Temperature (°C)
100
20088
Tamb - Ambient Temperature (°C)
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Change of Dominant Wavelength vs. Ambient Temperature
Δ VF - Change of Forward Voltage (mV)
2.5
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100
I Vrel - Relative Luminous Intensity
superred 2.0 1.5 1.0 0.5 0.0 - 50
30 mA 50 mA yellow
10 mA
20089
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
17015
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 13. Change of Forward Voltage vs. Ambient Temperature
Δλd - Change of Dom. Wavelength (nm)
yellow 4 2 0 -2 -4 -6 - 50
VF - Change of Forward Voltage (mV)
6
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 10 mA 50 mA 30 mA super red
17017
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
17039_1
Tamb - Ambient Temperature (°C)
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Figure 14. Change of Forward Voltage vs. Ambient Temperature
Document Number 81305 Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
www.vishay.com 5
VLMSY3420
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
4 1.2 2.6 (2.8) 0.5 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering)
19899
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM.3-SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. TAPING OF VLM.3...
4
3.5 3.1
2.2 2.0
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
Adhesive tape
Blister tape
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
Figure 15. Tape Dimensions in mm for PLCC-2
Component cavity
94 8670
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Document Number 81305 Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MILLIMETERS FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
10.0 9.0
REEL PACKAGE DIMENSION IN MILLIMETERS FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
10.4 8.4
120°
120°
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Identification Label: Vishay Type Group Tape Code Production Code Quantity
180 178
14.4 max.
94 8665
321 329
14.4 max.
18857
Figure 16. Reel Dimensions - GS08
Figure 17. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
TTW Soldering (acc. to CECC00802) 300
5s lead temperature second full line: typical wave dotted line: process limits
300
255 °C 255°C 240 °C 217 °C max. 260 °C 245 °C
250
Temperature (°C)
250
Temperature (°C)
235 to 260 °C first wave
200
max. 30 s
200
ca. 200 K/s
150
max. 120 sec max. 100 sec
150
100 to 130 °C ca. 2 K/s
100
max. Ramp Up 3 °C/sec max. Ramp Down 6 °C/sec
100
2 K/s
50
50
forced cooling
ca. 5 K/s
0 0
19470-2
0
50 100 150 Time (s)
max. 2 cycles allowed
200
250
300
948626-1
0
50
100
150
200
250
Time (s)
Figure 18. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
Figure 19. Double Wave Soldering of Opto Devices (all Packages)
Document Number 81305 Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
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VLMSY3420
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at
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