VLMTG3100-GS18

VLMB/BG/TG31.. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free device • Preconditioning: acc. to JEDEC level 2a • ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D, Method 3015.7 APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use 19225 DESCRIPTION This device has been designed to meet the increasing demand for InGaN technology. The package of the VLMB/BG/TG31.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-2 • Product series: standard • Angle of half intensity: ± 60° PARTS TABLE PART VLMB3140-GS08 VLMB3140-GS18 VLMBG3100-GS08 VLMBG3100-GS18 VLMTG3100-GS08 VLMTG3100-GS18 COLOR, LUMINOUS INTENSITY Blue, IV > 45 mcd Blue, IV > 45 mcd Blue green, IV > 140 mcd Blue green, IV > 140 mcd True green, IV > 180 mcd True green, IV > 180 mcd TECHNOLOGY InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 1 VLMB/BG/TG31.. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100 PARAMETER Reverse voltage2) DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) Tamb ≤ 80 °C tp ≤ 10 µs TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 5 20 0.2 84 110 - 40 to + 100 - 40 to + 100 350 UNIT V mA A mW °C °C °C K/W Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving LED in reverse direction is suitable for short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) Tamb = 25 °C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin ≤ 1.6 TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA SYMBOL IV λd λp ϕ VF VR TCV TCI 5 -4 - 0.4 MIN 45 462 TYP 100 470 464 ± 60 3 4.2 476 MAX UNIT mcd nm nm deg V V mV/K %/K OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN PARAMETER Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) T amb = 25 °C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin ≤ 1.6 2) TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA SYMBOL IV λd λp ϕ VF VR TCV TCI MIN 140 496 TYP 220 505 502 ± 60 3 MAX 514 UNIT mcd nm nm deg Dominant wavelength 4.2 V V mV/K %/K 5 -4 - 0.2 www.vishay.com 2 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMTG3100, TRUE GREEN PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) Tamb = 25 °C, unless otherwise specified 2) In one Packing Unit I Vmax/IVmin ≤ 1.6 TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA SYMBOL IV λd λp ϕ VF VR TCV TCI 5 - 3.5 - 0.3 MIN 180 515 TYP 300 528 522 ± 60 3 4.2 541 MAX UNIT mcd nm nm deg V V mV/K %/K LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD P Q R S T U 1 2 1 2 1 2 1 2 1 2 1 2 LIGHT INTENSITY (MCD) OPTIONAL MIN 45 56 71 90 112 140 180 224 280 355 450 560 MAX 56 71 90 112 140 180 224 280 355 450 560 710 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. CROSSING TABLE VISHAY VLMB3140 VLMBG3100 VLMTG3100 OSRAM LBT673 LVT673 LTT673 COLOR CLASSIFICATION BLUE GROUP MIN. 2 3 4 5 6 458 462 466 470 474 MAX. 464 468 472 476 480 496 500 504 508 502 506 510 514 515 521 527 533 523 529 535 541 BLUE GREEN DOM. WAVELENGTH (NM) MIN. MAX. MIN. MAX. TRUE GREEN Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 3 VLMB/BG/TG31.. Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 25 IV rel - Relative Luminous Intensity 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 16069 blue IF - Forward Current (mA) 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 110 Tamb - Ambient Temperature (°C) 420 440 460 480 500 520 540 560 16806 λ - Wavelength (nm) Figure 1. Forward Current vs. Ambient Temperature for InGaN Figure 4. Relative Intensity vs. Wavelength 100 90 IF - Forward Current (mA) 80 70 60 50 40 30 20 10 0 2.0 19918 2.5 3.0 3.5 4.0 4.5 5.0 16070 1.2 1.1 blue green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 420 440 460 480 500 520 540 560 580 600 λ - Wavelength (nm) VF - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage I Vrel - Relative Luminous Intensity 1 10 I F - Forward Current (mA) 100 IV rel - Relative Luminous Intensity Figure 5. Relative Intensity vs. Wavelength 10 I Vrel - Relative Luminous Intensity 1 0.1 0.01 16194 1.2 1.1 true green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 λ - Wavelength (nm) 16068 Figure 3. Specific Luminous Flux vs. Forward Current Figure 6. Relative Intensity vs. Wavelength www.vishay.com 4 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors 476 Dominant Wavelengthı λ (nm) blue Dominant Wavelength λ (nm) ı 474 538 536 true green 534 532 530 528 526 524 0 16814 472 470 468 10 20 30 40 50 16812 0 10 20 30 40 50 IF - Forward Current (mA) I F - Forward Current (mA) Figure 7. Dominant Wavelength vs. Forward Current Figure 9. Dominant Wavelength vs. Forward Current 0° 10° 20° 30° 515 Dominant Wavelengthı λ (nm) blue green 513 511 509 507 505 503 501 0 16813 IV rel - Relative Luminous Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 10 20 30 40 50 95 10319 I F - Forward Current (mA) Figure 8. Dominant Wavelength vs. Forward Current Figure 10. Relative Luminous Intensity PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 1.75 ± 0.10 technical drawings according to DIN specifications 0.9 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) ? 2.4 3 + 0.15 Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05 95 11314-1 Document Number 81242 Rev. 1.1, 31-Aug-07 4 www.vishay.com 5 VLMB/BG/TG31.. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 120° 10.0 9.0 4.5 3.5 Adhesive Tape 2.5 1.5 13.00 12.75 63.5 60.5 Identification Blister Tape Label: Vishay Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Component Cavity 94 8670 Figure 12. Reel Dimensions - GS08 TAPING OF VLM.3.. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED 3.5 3.1 2.2 2.0 120° 10.4 8.4 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 Identification Label: Vishay Type Group Tape Code Production Code Quantity 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 321 329 14.4 max. 18857 Figure 11. Tape Dimensions in mm for PLCC-2 Figure 13. Reel Dimensions - GS18 www.vishay.com 6 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors SOLDERING PROFILE IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a BARCODE PRODUCT LABEL EXAMPLE: 300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 max. 100 s 255 °C 240 °C 217 °C max. 260 °C 245 °C 106 A H VISHAY 37 BC 50 0 0 19885 D E F G 19919 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C 5s (acc. to CECC00802) 948626-1 Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: R2 = code for luminous intensity group 3 = code for color group D) Date code year/week E) Day code (e. g. 3: Wednesday) F) Batch no. G) Total quantity H) Company code DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. 2 K/s forced cooling 100 Time (s) 150 ca. 5 K/s Aluminum bag 200 250 Label Figure 15. Double Wave Soldering of Opto Devices (all Packages) Reel 15973 FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 7 VLMB/BG/TG31.. Vishay Semiconductors RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/ nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 level 2a label is included on all dry bags. LEVEL This bag contains MOISTURE –SENSITIVE DEVICES ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. CAUTION 2a 1. Shelf life in sealed bag 12 months at