VLMV3100
Vishay Semiconductors
Bicolor SMD LED PLCC-3
FEATURES • • • • • •
19140_1
• • • • • • • • • DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMV3100 is the PLCC-3. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a red and green chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-3 • Product series: bicolor • Angle of half intensity: ± 60°
SMD LED with exceptional brightness Multicolored e3 Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with IR reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020-C Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 2.0 Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Lead (Pb)-free device Preconditioning: acc. to JEDEC level 2a ESD-withstand voltage: up to 2 kV according to JESD22-A114-B
APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use
PARTS TABLE
PART VLMV3100-GS08 VLMV3100-GS18 Document Number 81347 Rev. 1.1, 13-Sep-07 COLOR, LUMINOUS INTENSITY Green/red, IV > 2.8 mcd Green/red, IV > 2.8 mcd TECHNOLOGY GaP on GaP/GaAsP on GaP GaP on GaP/GaAsP on GaP www.vishay.com 1
VLMV3100
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMV3100
PARAMETER Reverse voltage per diode2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) TEST CONDITION IR = 10 μA Tamb ≤ 60 °C tp ≤ 10 µs SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 6 30 0.5 100 100 - 40 to + 100 - 40 to + 100 400 UNIT V mA A mW °C °C °C K/W
Note: 1) Tamb = 25 °C unless otherwise specified 2) Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMV3100, RED
PARAMETER Luminous intensity Peak wavelength Angle of half intensity Forward voltage per diode Reverse current per diode Junction capacitance per diode Note: 1) Tamb = 25 °C unless otherwise specified 2) in one packing unit I Vmax/IVmin ≤ 0.5
2)
TEST CONDITION IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA VR = 6 V VR = 0, f = 1 MHz
SYMBOL IV λd λp ϕ VF IR Cj
MIN 2.8 612
TYP. 6
MAX 625
UNIT mcd nm nm deg
Dominant wavelength
635 ± 60 2.4 15 3 10
V µA pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMV3100, GREEN
PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage per diode Reverse current per diode Junction capacitance per diode Note: Tamb = 25 °C unless otherwise specified 2) in one Packing Unit IVmax/IVmin ≤ 0.5
1)
TEST CONDITION IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA VR = 6 V VR = 0, f = 1 MHz
SYMBOL IV λd λp ϕ VF IR Cj
MIN 2.8 562
TYP. 6
MAX 575
UNIT mcd nm nm deg
565 ± 60 2.4 15 3 10
V µA pF
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Document Number 81347 Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
COLOR CLASSIFICATION
GROUP MIN. 3 4 5 6 7 8 562 564 566 568 570 572 GREEN DOM. WAVELENGTH [NM] MAX. 565 567 569 571 573 575 L M Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above Type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. K
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD H J 1 2 1 2 1 2 1 2 1 2 LIGHT INTENSITY [MCD] OPTIONAL MIN 2.8 3.55 4.5 5.6 7.1 9.0 11.2 14.0 18.0 22.4 MAX 3.55 4.5 5.6 7.1 9.0 11.2 14.0 18.0 22.4 28.0
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
60
10000
t p /T = 0.005 Tamb < 60 °C 0.01 0.02 0.05
IF - Forward Current (mA)
I F - Forward Current (mA)
50 40 30 20 10 0 0 20 40 60 80 100
1000
100
0.2 0.5 DC
10
0.1
1 0.01
95 9985
0.1
1
10
100
95 10905
Tamb - Ambient Temperature (°C)
t p - Pulse Length (ms)
Figure 1. Forward Current vs. Ambient Temperature
Figure 2. Pulse Forward Current vs. Pulse Duration
Document Number 81347 Rev. 1.1, 13-Sep-07
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VLMV3100
Vishay Semiconductors
0°
10°
20° 30°
IV rel - Relative Luminous Intensity
100 red I F - Forward Current (mA)
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
10
1
0.1
0.6 95 10319 0.4 0.2 0 0.2 0.4 0.6
95 9989
0
1
2 3 4 V F - Forward Voltage (V)
5
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Forward Current vs. Forward Voltage
1.2 I V re l - Relative Luminous Intensity red I F - Forward Current (mA) 1.0 0.8 0.6 0.4 0.2 0 590
95 10040
100 green
10
1
610
630
650
670
690
0.1 0
95 9986
λ - Wavelength (nm)
1
2
3
4
5
V F - Forward Voltage (V)
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Forward Current vs. Forward Voltage
1.2
IVrel - Relative Luminous Intensity
green 1.0 0.8 0.6 0.4 0.2 0 520
I v rel - Relative Luminous Intensity
10 red
1
0.1
0.01
540 560 580 600 620
95 9995
1
10 I F - Forward Current (mA)
100
95 10038
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
Figure 8. Relative Luminous Intensity vs. Forward Current
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Document Number 81347 Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
I v rel - Relative Luminous Intensity
10
2.4 IV rel - Relative Luminous Intensity
green
red 2.0 1.6 1.2 0.8 0.4 0
1
0.1
0.01 1
95 9996
10
100
95 10321
I F - Forward Current (mA)
10 1
20 0.5
50 0.2
100 0.1
200 0.05
500 IF (mA) 0.02 tP/T
Figure 9. Relative Luminous Intensity vs. Forward Current
Figure 12. Rel. Luminous Intensity vs. Forw. Current/Duty Cycle
2.0 I v rel - Specific Luminous Intensity
I v rel - Relative Luminous Intensity
2.4
red 1.6
green 2.0 1.6 1.2 0.8 0.4 0
1.2
0.8 0.4 0 0
95 9993
40 60 80 Tamb - Ambient Temperature (°C)
20
100
95 10263
10 1
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF (mA)
t p /T
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 13. Specific Luminous Intensity vs. Forward Current
2.0
I v rel - Relative Luminous Intensity
green 1.6
1.2
0.8
0.4
0 0
95 10320
20
40
60
80
100
T amb - Ambient Temperature (°C)
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81347 Rev. 1.1, 13-Sep-07
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VLMV3100
Vishay Semiconductors
PACKAGE DIMENSIONS
Mounting Pad Layout
2.6 (2.8) 1.2 area covered with solder resist
4 1.6 (1.9) Dimensions: IR and Vaporphase (Wave Soldering)
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM.3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape.
TAPING OF VLM.3...
3.5 3.1 2.2 2.0
4
5.75 5.25 3.6 3.4
1.85 1.65
0.5
4.0 3.6 8.3 7.7
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
Adhesive Tape
94 8668
Figure 14. Tape Dimensions in mm for PLCC-2
Blister Tape
Component Cavity
94 8670
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Document Number 81347 Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
Temperature (°C)
120° 10.0 9.0
TTW Soldering 300 250 200 150 100 50 0 0 50 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
Identification Label: Vishay Type Group Tape Code Production Code Quantity
200
250
180 178
14.4 max.
94 8665
Figure 18. Double Wave Soldering of Opto Devices (all Packages)
Figure 15. Reel Dimensions - GS08
BAR CODE PRODUCT LABEL EXAMPLE:
106 A H VISHAY
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
120° 10.4 8.4
37
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
B
C
D
E
F
G
20164
Identification Label: Vishay Type Group Tape Code Production Code Quantity
321 329
14.4 max.
18857
Figure 16. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: H2 = code for luminous intensity group 3 = code for color group D) Date code year/week E) Day code (e.g. 4: Thursday) F) Batch no. G) Total quantity H) Company code DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
Aluminum bag
300
255 °C 255°C 240 °C 217 °C max. 260 °C 245 °C
250 Temperature (°C)
200
max. 30 s
150
max. 120 sec max. 100 sec
100
max. Ramp Up 3 °C/sec max. Ramp Down 6 °C/sec
50
Label
0 50 100 150 Time (s)
max. 2 cycles allowed
0 200 250 300
19470-2
Figure 17. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
Reel
15973
Document Number 81347 Rev. 1.1, 13-Sep-07
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VLMV3100
Vishay Semiconductors
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/ nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
CAUTION
2a
1. Shelf life in sealed bag 12 months at
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