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VLMY32ABBB-GS08

VLMY32ABBB-GS08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VLMY32ABBB-GS08 - Power SMD LED PLCC-4 - Vishay Siliconix

  • 数据手册
  • 价格&库存
VLMY32ABBB-GS08 数据手册
VLMK/Y32.. Vishay Semiconductors Power SMD LED PLCC-4 FEATURES • Available in 8 mm tape • High brightness SMD LED • Luminous intensity and color categorized e3 per packing unit • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Suitable for all soldering methods according to CECC 00802 and J-STD-020C • Preconditioning: acc. to JEDEC level 2a • Qualified according to JEDEC moisture sensitivity level 2a • Automotive qualified: AEC-Q101 • Lead (Pb)-free device • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Compatible with IR reflow solder processes according to CECC 00802 and J-STD-020C APPLICATIONS • Interior and exterior lighting • Indicator and backlighting purposes for audio, video, LCDs, switches, symbols, illuminated advertising etc. • Illumination purpose, alternative to incandescent lamps • General use 19210 DESCRIPTION The VLMK/Y32.. is an advanced development in terms of heat dissipation. The leadframe profile of this PLCC-4 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay’s high intensity SMD LED in PLCC-2 package. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: power • Angle of half intensity: ± 60° PARTS TABLE PART VLMK32ABBB-GS08 VLMY32ABBB-GS08 COLOR, LUMINOUS INTENSITY Amber, IV = (1400 to 2850) mcd Yellow, IV = (1400 to 2850) mcd TECHNOLOGY AlInGaP on Si AlInGaP on Si ABSOLUTE MAXIMUM RATINGS 1) VLMK/Y32.. PARAMETER Reverse voltage Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ambient mounted on PC board FR4 Note: 1) T amb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application Document Number 81819 Rev. 1.0, 25-Feb-08 www.vishay.com 1 2) TEST CONDITION SYMBOL VR IF Ptot Tj Tamb Tstg RthJA VALUE 5 70 200 125 - 40 to + 100 - 40 to + 100 290 UNIT V mA mW °C °C °C K/W VLMK/Y32.. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMK32., AMBER PARAMETER Luminous intensity 2) TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V PART VLMK32ABBB INCLUDED VLMK32AB VLMK32BA VLMK32BB SYMBOL IV IV IV λd Δλ ϕ VF IR MIN. 1400 1800 2240 610 TYP. MAX. 1800 2240 2850 621 UNIT mcd mcd mcd nm nm deg Dominant wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 18 ± 60 1.85 0.01 3.03 10 V µA Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltages are tested at a current pulse duration of 1 ms and a tolerance of ± 0.1 V OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMY32.., YELLOW PARAMETER Luminous intensity 2) TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V PART VLMY32ABBB INCLUDED VLMY32AB VLMY32BA VLMY32BB SYMBOL IV IV IV λd Δλ ϕ VF IR MIN. 1400 1800 2240 585 TYP. MAX. 1800 2240 2850 UNIT mcd mcd mcd nm nm deg Dominant wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 588 18 ± 60 594 1.85 0.01 3.03 10 V µA Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltages are tested at a current pulse duration of 1 ms and a tolerance of ± 0.1 V LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD AB BA BB LIGHT INTENSITY (MCD) MIN. 1400 1800 2240 MAX. 1800 2240 2850 COLOR CLASSIFICATION YELLOW GROUP MIN. X Y Z W X 585 588 591 MAX. 588 591 594 610 615 615 621 MIN. AMBER MAX. DOM. WAVELENGTH (NM) Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. CROSSING TABLE VISHAY VLMK32ABBB-GS08 VLMY32ABBB-GS08 OSRAM LAE6SF-AABB LYE6SF-AABB www.vishay.com 2 Document Number 81819 Rev. 1.0, 25-Feb-08 VLMK/Y32.. Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IV rel - Relative Luminous Intensity 100 90 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 50 60 70 80 90 100 21015 amber IF - Forward Current (mA) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 21013 Tamb - Ambient Temperature (°C) IF - Forward Current (mA) Figure 1. Forward Current vs. Ambient Temperature 0° 10° 20° 30° Figure 4. Relative Luminous Intensity vs. Forward Current ΔVF - Change of Forward Voltage (mV) 0.5 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 10 20 30 40 50 60 70 80 90 100 yellow IV rel - Relative Luminous Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 21016 IF - Forward Current (mA) Figure 2. Rel. Luminous Intensity vs. Angular Displacement Figure 5. Change of Forward Voltage vs. Forward Current 2.0 ΔVF - Change of Forward Voltage (mV) IV rel - Relative Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 yellow 0.5 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 10 20 30 40 50 60 70 80 90 100 amber 10 20 30 40 50 60 70 80 90 100 21014 IF - Forward Current (mA) 21017 Figure 3. Relative Luminous Intensity vs. Forward Current IF - Forward Current (mA) Figure 6. Change of Forward Voltage vs. Forward Current Document Number 81819 Rev. 1.0, 25-Feb-08 www.vishay.com 3 VLMK/Y32.. Vishay Semiconductors Δ VF - Change of Forward Voltage (mV) 2.5 250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 250 - 50 - 25 0 25 50 75 100 125 amber IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0 - 50 - 25 21018 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) 21021 Tamb - Ambient Temperature (°C) Figure 7. Relative Lum. Intensity vs. Ambient Temperature Figure 10. Change of Forward Voltage vs. Ambient Temperature 1.8 Δλd - Change of Dom. Wavelength (nm) 10 8 6 4 2 0 -2 -4 -6 -8 - 10 - 50 - 25 0 25 50 75 100 125 yellow IV rel - Relative Luminous Intensity 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 - 25 0 25 50 amber 75 100 125 21022 21019 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Figure 8. Relative Lum. Intensity vs. Ambient Temperature Figure 11. Change of Dominant Wavelength vs. Ambient Temperature Δ VF - Change of Forward Voltage (mV) Δλd - Change of Dom. Wavelength (nm) 250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 250 - 50 - 25 0 25 50 75 100 125 yellow 10 8 6 4 2 0 -2 -4 -6 -8 - 10 - 50 - 25 0 25 50 75 100 125 amber 21020 Tamb - Ambient Temperature (°C) 21023 Tamb - Ambient Temperature (°C) Figure 9. Change of Forward Voltage vs. Ambient Temperature Figure 12. Change of Dominant Wavelength vs. Ambient Temperature www.vishay.com 4 Document Number 81819 Rev. 1.0, 25-Feb-08 VLMK/Y32.. Vishay Semiconductors 1.2 1.2 yellow 1.0 0.8 0.6 0.4 0.2 0 500 525 550 575 600 625 650 675 700 21024 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity amber 1.0 0.8 0.6 0.4 0.2 0 500 525 550 575 600 625 650 675 700 λ - Wavelength (nm) 21025 λ - Wavelength (nm) Figure 13. Relative Intensity vs. Wavelength Figure 14. Relative Intensity vs. Wavelength REEL DIMENSIONS in millimeters GS08 = 2000 pcs 20983 Document Number 81819 Rev. 1.0, 25-Feb-08 www.vishay.com 5 VLMK/Y32.. Vishay Semiconductors TAPING DIMENSIONS in millimeters 21066 www.vishay.com 6 Document Number 81819 Rev. 1.0, 25-Feb-08 VLMK/Y32.. Vishay Semiconductors PACKAGE/SOLDERING PADS DIMENSIONS in millimeters 20982 Document Number 81819 Rev. 1.0, 25-Feb-08 www.vishay.com 7 VLMK/Y32.. Vishay Semiconductors SOLDERING PROFILE IR Reflow Soldering Profile for Lead (Pb)-free Soldering Preconditioning acc. to JEDEC Level 2a BAR CODE PRODUCT LABEL EXAMPLE: 300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 19885 106 255 °C 240 °C 217 °C max. 260 °C 245 °C E F max. 100 s 37 max. ramp up 3 °C/s max. ramp down 6 °C/s 21026 B 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed CA G D Figure 15. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 235 °C to 260 °C first wave ca. 200 K/s 100 °C to 130 °C 5s (acc. to CECC00802) 948626-1 lead temperature second wave ca. 2 K/s full line: typical dotted line: process limits A) Type of component B) PTC = manufacturing plant C) SEL - selection code (bin): e.g.: K2 = code for luminous intensity group 4 = code for color group D) Batch/date code E) Total quantity F) Company code G) Code for lead (Pb)-free classification (e3) 2 K/s forced cooling 100 Time (s) 150 ca. 5 K/s 200 250 Figure 16. Double Wave Soldering of Opto Devices (all Packages) www.vishay.com 8 Document Number 81819 Rev. 1.0, 25-Feb-08 VLMK/Y32.. Vishay Semiconductors DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. LEVEL This bag contains MOISTURE –SENSITIVE DEVICES CAUTION 2a 1. Shelf life in sealed bag 12 months at
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