VLMPG/YG30..
Vishay Semiconductors
Low current SMD LED PLCC-2
FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free device • Preconditioning: acc. to JEDEC Level 2a • ESD-withstand voltage: > 2 kV acc. to MIL STD 883 D, Method 3015.7 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Automotive qualified AEC-Q101
19225
DESCRIPTION This device has been designed to meet the increasing demand for InGaN technology. The package of the VLMPG/YG30.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA • Product group: SMD LED • Product series: Low current LED • Package: PLCC-2 • Angle of half intensity: ± 60°
APPLICATIONS • Automotive: Backlighting in dashboards and switches • Telecommunication: Indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use
Document Number 81648 Rev. 1.0, 23-Aug-07
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VLMPG/YG30..
Vishay Semiconductors
PARTS TABLE
PART VLMPG30E1F2-GS08 VLMPG30E1F2-GS18 VLMPG30F1G2-GS08 VLMPG30F1G2-GS18 VLMPG30E1G2-GS08 VLMPG30E1G2-GS18 VLMYG30G2J1-GS08 VLMYG30G2J1-GS18 VLMYG30H2K1-GS08 VLMYG30H2K1-GS18 VLMYG30G2K1-GS08 VLMYG30G2K1-GS18 COLOR, LUMINOUS INTENSITY Pure green, IV = (0.71 to 1.80) mcd Pure green, IV = (0.71 to 1.80) mcd Pure green, IV = (1.12 to 2.80) mcd Pure green, IV = (1.12 to 2.80) mcd Pure green, IV = (0.71 to 2.80) mcd Pure green, IV = (0.71 to 2.80) mcd Yellow green, IV = (2.24 to 5.60) mcd Yellow green, IV = (2.24 to 5.60) mcd Yellow green, IV = (3.55 to 9.00) mcd Yellow green, IV = (3.55 to 9.00) mcd Yellow green, IV = (2.24 to 9.00) mcd Yellow green, IV = (2.24 to 9.00) mcd TECHNOLOGY AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS AlInGaP/GaAS
ABSOLUTE MAXIMUM RATINGS1) VLMPG30.., VLMYG30..
PARAMETER Reverse voltage
2)
TEST CONDITION Tamb ≤ 80 °C tp ≤ 10 µs
SYMBOL VR IF IFSM PV Tj Tamb Tstg
VALUE 5 20 0.2 60 125 - 40 to + 100 - 40 to + 100 400
UNIT V mA A mW °C °C °C K/W
DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient
mounted on PC board (pad size > 16 mm2)
RthJA
Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMPG30.., PURE GREEN
PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) T amb = 25 °C, unless otherwise specified 2) In one Packing Unit IVmax/IVmin ≤ 1.6 TEST CONDITION IF = 2 m A IF = 2 m A IF = 2 m A IF = 2 m A IF = 2 m A IR = 10 µA IF = 20 mA IF = 20 mA SYMBOL IV λd λp ϕ VF VR TCV TCI 5 -4 - 0.4 MIN 0.71 555 560 565 ± 60 2.2 TYP MAX 2.8 565 UNIT mcd nm nm deg V V mV/K %/K
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Document Number 81648 Rev. 1.0, 23-Aug-07
VLMPG/YG30..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMYG30.., YELLOW GREEN
PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) Tamb = 25 °C, unless otherwise specified 2) In one Packing Unit I Vmax/IVmin ≤ 1.6 TEST CONDITION IF = 2 m A IF = 2 m A IF = 2 m A IF = 2 m A IF = 2 m A IR = 10 µA IF = 20 mA IF = 20 mA SYMBOL IV λd λp ϕ VF VR TCV TCI 5 -4 - 0.2 MIN 2.24 566 574 576 ± 60 2.2 TYP MAX 9.0 575 UNIT mcd nm nm deg V V mV/K %/K
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD E F G H J K 1 2 1 2 1 2 1 2 1 2 1 LIGHT INTENSITY (MCD) OPTIONAL MIN 0.71 0.90 1.12 1.40 1.80 2.24 2.80 3.55 4.50 5.60 7.10 MAX 0.90 1.12 1.40 1.80 2.24 2.80 3.55 4.50 5.60 7.10 9.00
COLOR CLASSIFICATION
PURE GREEN GROUP 0 1 2 3 DOM. WAVELENGTH (NM) MIN. 555 558 560 562 MAX. 559 561 563 565
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
COLOR CLASSIFICATION
YELLOW-GREEN GROUP 5 6 7 8 DOM. WAVELENGTH (NM) MIN. 566 568 570 572 MAX. 569 571 573 575
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
Document Number 81648 Rev. 1.0, 23-Aug-07
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VLMPG/YG30..
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
30
1.2
IV rel - Relative Luminous Intensity
pure green
1.0 0.8 0.6 0.4 0.2 0.0
IF - Forward Current (mA)
20
10
0 0
20831
20
40
60
80
100
120
18648
510
530
550
570
590
610
Tamb - Ambient Temperature (°C)
- Wavelength (nm)
Figure 1. Forward Current vs. Ambient Temperature
Figure 4. Relative Luminous Intensity vs. Wavelength
30
Δ VF - Change of Forward Voltage (mV)
600 500 30 mA 400 300 200 100 0 - 100 - 200 - 300 - 50 - 25 0 25 50 75 100 10 mA 20 mA
IF - Forward Current (mA)
25 20 15 10 5 0 1.8 1.85 1.9 1.95 2
2.05 2.1 2.15 2.2
20821
VF - Forward Voltage (V)
20667
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Change of Forward Voltage vs. Ambient Temperature
0°
10°
20°
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
30°
3.0 pure green 2.5 2.0 1.5 1.0 0.5 0.0 - 50
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
- 25
0
25
50
75
100
18616
Tamb - Ambient Temperature (°C)
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
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Document Number 81648 Rev. 1.0, 23-Aug-07
VLMPG/YG30..
Vishay Semiconductors
100
1.2
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
yellow green 1.0 0.8 0.6 0.4 0.2 0.0 520
10
1
0 1
20822
10
100
540
560
580
600
620
IF - Forward Current (mA)
18647
- Wavelength (nm)
Figure 7. Rel. Luminous Intensity vs. Forward Current
Figure 10. Rel. Luminous Intensity vs. Wavelength
Δλd - Change of Dom. Wavelength (nm)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30
VF - Change of Forward Voltage (mV)
2.0
0.5 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 60 - 40 - 20 0 20 40 60 80 100
20823
IF - Forward Current (mA)
20687
Tamb - Ambient Temperature (°C)
Figure 8. Change of Dominant Wavelength vs. Forward Current
Figure 11. Change of Forward Voltage vs. Ambient Temperature
Δ λ d - Change of Dom. Wavelength (nm)
8 pure green 6 4 2 0 -2 -4 -6 -8 - 50
18617
3.5
IV rel - Relative Luminous Intensity
3.0 2.5 2.0 1.5 1.0 0.5 0 - 60 - 40 - 20 0
- 25
0
25
50
75
100
20824
20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Figure 9. Change of Dominant Wavelength vs. Ambient Temperature
Figure 12. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81648 Rev. 1.0, 23-Aug-07
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VLMPG/YG30..
Vishay Semiconductors
Δλd - Change of Dom. Wavelength (nm)
IV rel - Relative Luminous Intensity
10 yellow green
12 10 8 6 4 2 0 -2 -4 -6 -8 - 60 - 40 - 20 0 20 40 60 80 100 120
1
0.1
0.01 1
18646
10
100
IF - Forward Current (mA)
20825
Tamb - Ambient Temperature (°C)
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 15. Change of Dominant Wavelength vs. Ambient Temperature
Δλd- Change of Dom. Wavelength (nm)
3
yellow green
2 1 0 -1 -2 -3 10 20 30 40 50 60 70 80 90 100
18649
IF - Forward Current (mA)
Figure 14. Change of Dominant Wavelength vs. Forward Current
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout 1.2 area covered with solder resist
2.6 (2.8)
4 1.6 (1.9)
20541
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4
Document Number 81648 Rev. 1.0, 23-Aug-07
VLMPG/YG30..
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
10.0 9.0
120°
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
Adhesive Tape
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Blister Tape
180 178
14.4 max.
94 8665
Figure 17. Reel dimensions - GS08
Component Cavity
94 8670
TAPING OF VLM.3..
3.5 3.1 2.2 2.0
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERED
10.4 8.4
120°
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7 Identification Label: Vishay Type Group Tape Code Production Code Quantity
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
321 329
14.4 max.
18857
Figure 16. Tape dimensions in mm for PLCC-2 Figure 18. Reel dimensions - GS18
Document Number 81648 Rev. 1.0, 23-Aug-07
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VLMPG/YG30..
Vishay Semiconductors
SOLDERING PROFILE BARCODE-PRODUCT-LABEL EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0
19885
106
255 °C 240 °C 217 °C max. 260 °C 245 °C
A
H VISHAY 37
max. 100 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
B
C
D
E
F
G
19988
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 19. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B)
TTW Soldering 300 250 Temperature (°C) 200 150 100 50 0 0 50 235 °C...260 °C first wave ca. 200 K/s 100 °C...130 °C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: L2 = code for luminous intensity group 0 = code for color group D) Date code year/week E) Day code (e.g. 1: Monday) F) Batch no. G) Total quantity H) Company code
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
200
250
Figure 20. Double Wave Soldering of Opto Devices (all packages)
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Document Number 81648 Rev. 1.0, 23-Aug-07
VLMPG/YG30..
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at
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