VN2222L

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number VN0610L VN10KLS VN2222L 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 5 @ VGS = 10 V 7.5 @ VGS = 10 V VGS(th) (V) 0.8 to 2.5 0.8 to 2.5 0.6 to 2.5 ID (A) 0.27 0.31 0.23 FEATURES D D D D D Zener Diode Input Protected Low On-Resistance: 3 W Ultralow Threshold: 1.2 V Low Input Capacitance: 38 pF Low Input and Output Leakage BENEFITS D D D D D Extra ESD Protection Low Offset Voltage Low-Voltage Operation High-Speed, Easily Driven Low Error Voltage APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays D Inductive Load Drivers TO-226AA (TO-92) S 1 Device Marking Front View VN0610L “S” VN 0610L xxyy VN2222L “S” VN 2222L xxyy S TO-92S Device Marking Front View VN10KLS G 2 “S” VN 10KLS xxyy “S” = Siliconix Logo xxyy = Date Code 1 G 2 D 3 D 3 Top View VN0610L VN2222L “S” = Siliconix Logo xxyy = Date Code Top View VN10KLS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70213 S-04279—Rev. F, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN2222L VN0610L 60 15/–0.3 0.27 0.17 1 0.8 0.32 156 VN10KLS 60 15/–0.3 0.31 0.20 1.0 0.9 0.4 139 Unit V A W _C/W _C –55 to 150 11-1 VN0610L, VN10KLS, VN2222L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN0610L VN10KLS VN2222L Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = 15 V VDS = 48 V, VGS = 0 V TJ = 125_C VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.2 A 120 1.2 1 60 0.8 2.5 100 10 500 60 0.6 2.5 100 10 500 0.75 7.5 5 9 7.5 7.5 13.5 100 mS W mA A V nA 1 4 3 5.6 300 0.2 0.75 Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 10 V, ID = 0.5 A VDS = 7.5 V, ID = 0.05 A 100 Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 38 16 2 60 25 5 60 25 5 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V RG = 25 W 7 9 10 10 10 ns 10 VNDP06 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70213 S-04279—Rev. F, 16-Jul-01 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 50 VGS = 2.0 V 5V 40 ID – Drain Current (mA) 1.9 V 30 1.8 V 20 1.6 V 1.5 V 10 1.4 V 1.2 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 0.6 4V 0.4 3V 0.2 2V 0.8 VGS = 10 V 1.0 Output Characteristics for Low Gate Drive 6V Transfer Characteristics 0.5 VDS = 15 V 6 0.4 ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) TJ = –55_C 25_C 0.3 125_C 0.2 5 4 3 7 On-Resistance vs. Gate-to-Source Voltage 250 mA 500 mA ID = 50 mA 2 1 0.1 0 0 1 2 3 4 5 VGS – Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 5 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 ID = 0.5 A 0.1 A 4 VGS = 10 V 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 –50 –10 30 70 110 150 ID – Drain Current (A) TJ – Junction Temperature (_C) Document Number: 70213 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-3 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 100 VGS = 0 V f = 1 MHz 80 ID – Drain Current (mA) 1 TJ = 150_C 100_C 0.1 25_C 0_C C – Capacitance (pF) Capacitance 60 40 Coss 20 Ciss –55_C 0.01 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 0 0 Crss 10 20 30 40 50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge 15.0 ID = 0.5 A VGS – Gate-to-Source Voltage (V) 12.5 VDS = 30 V 10.0 t – Switching Time (ns) 100 Load Condition Effects on Switching VDD = 15 V RL = 25 W VGS = 0 to 10 V 7.5 10 td(off) tf td(on) tr 5.0 48 V 2.5 0 0 100 200 300 400 500 600 Qg – Total Gate Charge (pC) 1 0.1 0.5 ID – Drain Current (A) 1.0 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70213 S-04279—Rev. F, 16-Jul-01