VN88AFD

2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number 2N6661 VN88AFD V(BR)DSS Min (V) 90 80 rDS(on) Max (W) 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) (V) 0.8 to 2 0.8 to 2.5 ID (A) 0.9 1.29 FEATURES D D D D D Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-205AD (TO-39) TO-220SD (Tab-Drain) D S 1 Device Marking Side View 2N6661 “S” fllxxyy 2 3 D “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code G Device Marking Front View VN88AFD “S” xxyy “S” = Siliconix Logo xxyy = Date Code SGD Front View VN88AFD S N-Channel MOSFET G Top View 2N6661 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambientb Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Document Number: 70224 S-04279—Rev. C, 16-Jul-01 www.vishay.com TC = 25_C TC = 100_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg 2N6661 90 "20 0.9 0.7 "3 6.25 2.5 170 VN88AFD 80 "30 1.29 0.81 "3 15 6 Unit V A W 8.3 –55 to 150 _C/W _C 11-1 2N6661/VN88AFD Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N6661 VN88AFD Parameter Static Drain-Source Breakdown Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA 125 1.6 1.8 1.3 90 0.8 2 80 0.8 2.5 V Gate-Threshold Voltage VGS(th) TJ = –55_C TJ = 125_C VDS = 0 V, VGS = "15 V "100 "500 10 "100 "500 nA Gate-Body Leakage IGSS TJ = 125_C VDS = 90 V, VGS = 0 V VDS = 80 V, VGS = 0 V 10 1 500 1.8 1.8 3.8 3.6 6.7 350 0.9 170 5.3 4 9 170 1.5 1.5 5.6 4 8 mS V W A 500 mA Zero Gate Voltage Drain Current IDSS VDS = 0.8 x V(BR)DSS, VGS = 0 V TJ = 125_C On-State Drain Currentb VDS = 15 V, VGS = 10 V ID(on) VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.3 A Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 1 A TJ = 125_Cd Forward Transconductanceb Diode Forward Voltage gfs VSD VDS = 10 V, ID = 0.5 A IS = 0.86 A, VGS = 0 V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Ciss Coss Crss Cds VDS = 24 V, VGS = 0 V f = 1 MHz 35 15 2 30 50 40 10 40 50 40 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 6 8 10 10 15 ns 15 VNDQ09 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. www.vishay.com 11-2 Document Number: 70224 S-04279—Rev. C, 16-Jul-01 2N6661/VN88AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 VGS = 10 V 6V 0.8 5V 0.6 ID – Drain Current (mA) ID – Drain Current (A) 60 80 100 Output Characteristics for Low Gate Drive VGS = 3 V 2.8 V 2.6 V 4V 2.4 V 0.4 3V 0.2 2V 0 0 1.0 2.0 3.0 4.0 5.0 VDS – Drain-to-Source Voltage (V) 40 2.2 V 20 2.0 V 1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 0.5 125_C 6 25_C rDS(on) – On-Resistance ( Ω ) 0.4 ID – Drain Current (A) 5 4 3 2 1 0 0 2 4 6 8 10 VGS – Gate-Source Voltage (V) 0 0 7 On-Resistance vs. Gate-to-Source Voltage 0.3 0.5 A I D = 0.1 A 1.0 A 0.2 0.1 VDS = 15 V 4 8 12 16 20 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 10 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 0.5 1.0 1.5 2.0 2.5 –50 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 8 6 VGS = 10 V 4 2 0 –10 30 70 110 150 ID – Drain Current (A) TJ – Junction Temperature (_C) Document Number: 70224 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-3 2N6661/VN88AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VGS = 5 V 100 ID – Drain Current (mA) 1 TJ = 150_C C – Capacitance (pF) 125 VGS = 0 V f = 1 MHz Capacitance 75 50 C oss C rss 0 0.1 C iss 125_C 25_C –55_C 25 0.01 0.5 1.0 1.5 2.0 0 10 20 30 40 50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge 15.0 I D = 1.0 A VGS – Gate-to-Source Voltage (V) 12.5 t – Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RL = 23 W VGS = 0 to 10 V ID = 1.0 A 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr 2.5 td(on) tf 1 0 100 200 300 400 500 0.1 ID – Drain Current (A) 1 2 Qg – Total Gate Charge (pC) 0 Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661) 1.0 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJC = 20_C/W 3. TJM – TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70224 S-04279—Rev. C, 16-Jul-01