VP0300LS

VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VP0300L VP0300LS VQ2001J VQ2001P –30 V(BR)DSS Min (V) rDS(on) Max (W) 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2 @ VGS = –12 V 2 @ VGS = –12 V VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 ID (A) –0.32 –0.5 –0.6 –0.6 FEATURES D D D D D High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: –3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF TO-226AA (TO-92) 1 BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control Dual-In-Line D1 P S1 G1 1 2 3 4 5 6 7 14 D4 13 S4 12 G4 11 NC 10 G3 9 8 Top View Plastic: VQ2001J Sidebraze: VQ2001P S3 D3 P P TO-92S (Copper Lead Frame) S 1 S G 2 G 2 NC G2 D 3 D 3 P S2 D2 Top View VP0300L Top View VP0300LS For device marking, see the last page of this data sheet. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ2001J/P Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VP0300L –30 "20 –0.32 –0.2 –2.4 0.8 0.32 156 VP0300LS –30 "20 –0.5 –0.32 –3 0.9 0.4 139 –55 to 150 Single –30 "20 –0.6 –0.37 –2 1.3 0.52 96 Total Quad –30 "20 –0.6 –0.37 –2 2 0.8 62.5 Unit V A W _C/W _C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70217 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 VP0300L/LS, VQ2001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0300L/LS VQ2001J/P Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = –10 mA VDS = VGS, ID = –1 mA VDS = 0 V, VGS = "16 V –55 –3.1 –30 –2 –4.5 –30 –2 –4.5 "100 "500 "100 –10 –500 –500 –10 mA nA V Gate-Body Leakage IGSS TJ = 125_C VDS = 0 V, VGS = "20 V VDS = –24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 125_C VDS = –30 V, VGS = 0 V On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb ID(on) rDS(on) gfs gos VDS = –10 V, VGS = –12 V VGS = –12 V, ID = –1 A TJ = 125_C VDS = –10 V, ID = –0.5 A VDS = –7.5 V, ID = –0.05 A –2.8 1.5 2.6 370 0.25 –1.5 2.5 3.6 –1.5 2 3.6 A W 200 200 mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = –15 V, VGS = 0 V f = 1 MHz 60 40 10 150 100 60 150 100 60 pF Switchingc Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = –25 V, RL = 23 W ID ^ –1 A, VGEN = –10 V RG = 25 W VDD =–15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V RG = 25 W 19 17 19 16 30 30 ns 30 30 VPEA03 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70217 S-04279—Rev. E, 16-Jul-01 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –2.0 VGS = –10 V –1.6 ID – Drain Current (A) –9 V –1000 Transfer Characteristics 125_C –8 V ID – Drain Current (mA) –800 TJ = –55_C 25_C –1.2 –7 V –600 –0.8 –6 V –400 –0.4 –5 V –4 V –200 0 0 –1 –2 –3 –4 –5 VDS – Drain-to-Source Voltage (V) 0 0 –2 –4 –6 –8 –10 VGS – Gate-to-Source Voltage (V) Capacitance 175 150 125 100 75 50 25 0 0 –5 –10 –15 –20 –25 –30 VDS – Drain-to-Source Voltage (V) Crss Coss VGS = 0 V f = 1 MHz VGS – Gate-to-Source Voltage (V) –18 Gate Charge –15 VDS = –15 V ID = –1 A VDS = –24 V ID = –1 A C – Capacitance (pF) –12 –9 Ciss –6 –3 0 0 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) On-Resistance vs. Junction Temperature 1.65 –10 K Source-Drain Diode Forward Voltage TJ = 150_C –1 K TJ = 25_C IS – Source Current (A) 150 1.50 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS = –4.5 V ID = –0.5 A 1.35 1.20 VGS = –10 V ID = –0.1 A –100 1.05 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 125 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) www.vishay.com Document Number: 70217 S-04279—Rev. E, 16-Jul-01 11-3 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Gate-to-Source Voltage 3.0 ID = –0.5 A rDS(on) – On-Resistance ( Ω ) 2.5 ID – Drain Current (µA) –1 K –10 K VDS = –10 V TJ = 150_C Threshold Region 2.0 –100 100_C 25_C 1.5 ID = –0.2 A –10 1.0 –55_C 0 0 –4 –8 –12 –16 –20 VGS – Gate-to-Source Voltage (V) –1 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) THERMAL RATINGS Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 t1 – Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 1K 10 K DEVICE MARKINGS Front View: VP0300L “S” VP 0300L xxyy Top View: VQ2001J VQ2001J “S”f//xxyy “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VP0300LS “S” VP 0300LS xxyy VP0300LS VQ2001P “S”f//xxyy www.vishay.com 11-4 Document Number: 70217 S-04279—Rev. E, 16-Jul-01