VP2410L

VP2410L Vishay Siliconix P-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –240 rDS(on) Max (W) 10 @ VGS = –4.5 V VGS(th) (V) –0.8 to –2.5 ID (A) –0.18 FEATURES D D D D D High-Side Switching Secondary Breakdown Free: –255 V Low On-Resistance: 8 W Low-Power/Voltage Driven Excellent Thermal Stability BENEFITS D D D D D Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature “Run-Away” APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S 1 Device Marking Front View “S” VP 2410L xxyy “S” = Siliconix Logo xxyy = Date Code G 2 D 3 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70211 S-04279—Rev. D, 16-Jun-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limits –240 "20 –0.18 –0.11 –0.72 0.8 0.32 156 –55 to 150 Unit V A W _C/W _C 11-1 VP2410L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static VGS = 0 V, ID = –5 mA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –1 mA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –2.5 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS TJ = 125_C VDS = –180 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) TJ = 125_C VDS = –10 V, VGS = –4.5 V VGS = –10 V, ID = –0.1 A Drain-Source On-Resistanceb rDS(on) VGS = –4.5 V, ID = –0.1 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = –10 V, ID = –0.1 A VDS = –10 V, ID = –0.05 A 125 –150 –300 6 8 14.5 175 0.125 mS 10 20 W –0.8 –240 –255 –255 –2.1 –2.2 –2.5 "10 "50 –1 –100 mA mA nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =–25 V, VGS = 0 V f = 1 MHz 65 25 12 95 30 15 pF Switchingc Turn-On Time td(on) tr td(off) tf VDD = –25 V, RL = 250 W ID ^ –0.1 A, VGEN = –10 V RG = 25 W 7 18 45 45 15 30 ns 70 60 VPDV24 Turn-Off Time Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70211 S-04279—Rev. D, 16-Jun-01 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics –500 –5 V –400 ID – Drain Current (mA) VGS = –10 V –4.5 V –300 –4 V –200 ID – Drain Current (mA) –80 VGS = –4 V –3.6 V –3.4 V –100 Output Characteristics for Low Gate Drive –60 –40 –3.0 V –20 –3.2 V –100 –3 V –2.8 V –2.6 V 0 0 –1 –2 –3 –4 –5 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics –500 VDS = –15 V TJ = –55_C rDS(on) – On-Resistance ( Ω ) –400 ID – Drain Current (mA) 25_C 125_C –300 12 10 8 14 On-Resistance vs. Gate-to-Source Voltage ID = –0.20 A 6 ID = –0.1 A 4 2 –200 –100 0 0 –1 –2 –3 –4 –5 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 16 VGS = –4.5 V rDS(on) – Drain-Source On-Resistance ( Ω ) 14 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 –100 –200 –300 –400 –500 –50 Normalized On-Resistance vs. Junction Temperature VGS = –10 V ID = –0.2 A 12 10 VGS = –4.5 V ID = –0.1 A 8 6 –10 20 70 110 150 ID – Drain Current (mA) TJ – Junction Temperature (_C) Document Number: 70211 S-04279—Rev. D, 16-Jun-01 www.vishay.com 11-3 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region –10 150 Capacitance VGS = 0 V f = 1 MHz TJ = 150_C ID – Drain Current (mA) C – Capacitance (pF) –1 125_C 25_C 125 100 Ciss 75 Coss –0.1 –55_C 50 Crss 25 –0.01 0 –1.2 –1.6 –2.0 –2.4 –2.8 –3.2 –3.6 0 0 –10 –20 –30 –40 –50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge –12 ID = –100 mA –10 VGS – Gate-to-Source Voltage (V) 100 Load Condition Effects on Switching td(off) tf –8 VDS = –120 V –6 t – Switching Time (ns) tr 10 td(on) –4 –192 V –2 VDD = –25 V RG = 25 W VGS = 0 to –10 V 1 0 100 200 300 400 500 –10 –100 ID – Drain Current (mA) –1000 Qg – Total Gate Charge (pC) 1 Duty Cycle = 0.5 0.2 0.1 0.05 Notes: PDM 0 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Normalized Effective Transient Thermal Impedance 0.1 0.02 Single Pulse 0.01 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70211 S-04279—Rev. D, 16-Jun-01