VQ1001J

VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VQ1001J VQ1001P V(BR)DSS Min (V) 30 rDS(on) Max (W) 1 @ VGS = 12 V 1 @ VGS = 12 V VGS(th) (V) 0.8 to 2.5 0.8 to 2.5 ID (A) 0.83 0.53 FEATURES D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ1001P “S” fllxxyy N Device Marking Top View VQ1001J “S” fllxxyy Top View Plastic: VQ1001J Sidebraze: VQ1001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage VQ1001J VQ1001P Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation (Single) Thermal Resistance, Junction-to-Ambient (Single) Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70219 S-04279—Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C ID IDM PD RthJA TJ, Tstg Symbol VDS VGS Single 30 "30 "20 0.83 0.53 3 1.3 0.52 96 Total Quad Unit V A 2 0.8 62.5 –55 to 150 W _C/W _C 11-1 VQ1001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "16 V TJ = 125_C VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 10 V, VGS = 12 V VGS = 5 V, ID = 0.2 A Drain-Source On-Resistanceb rDS(on) VGS = 12 V, ID = 1 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 200 2 3.5 1.2 0.8 1.5 500 1.75 1 2 mS W 30 0.8 45 1.5 2.5 "100 "500 10 500 mA A nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 38 33 8 110 110 35 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 15 V, RL = 23 W, ID ^ 0.6 A VGEN = 10 V, RG = 25 W 9 14 30 ns 30 VNDQ03 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70219 S-04279—Rev. D, 16-Jul-01 VQ1001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 7V 6V Output Characteristics for Low Gate Drive 200 VGS = 10 V 160 ID – Drain Current (mA) 2.7 V 120 2.5 V 80 2.3 V 40 2.9 V 1.6 ID – Drain Current (A) 1.2 5V 0.8 4V 0.4 3V 2V 2.1 V 1.7 V 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 500 3 rDS(on) – On-Resistance ( Ω ) On-Resistance vs. Gate-to-Source Voltage 400 ID – Drain Current (mA) VDS = 15 V ID = 0.2 A 0.5 A 2 300 200 1 1.0 A 100 TJ = 125_C 25_C –55_C 0 3 4 5 0 4 8 12 16 20 0 0 1 2 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 2.00 1.75 Normalized On-Resistance vs. Junction Temperature 2.0 VGS = 4.5 V 1.5 6V VGS = 10 V ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 10 V 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.50 –50 –10 30 70 110 150 ID – Drain Current (A) TJ – Junction Temperature (_C) Document Number: 70219 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-3 VQ1001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 10 V TJ = 150_C ID – Drain Current (mA) 1 100_C 25_C 0.1 C – Capacitance (pF) 100 VGS = 0 V f = 1 MHz 120 Capacitance 80 60 40 Ciss Coss 20 –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Crss Gate Charge 6 ID = 1 A VGS – Gate-to-Source Voltage (V) 5 t – Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 4 VDS = 15 V 3 24 V 2 10 td(on) tr td(off) tf 1 0 0 80 160 240 320 400 Qg – Total Gate Charge (pC) 1 0.1 1 ID – Drain Current (A) 10 Drive Resistance Effects on Switching 100 VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A t – Switching Time (ns) 500 Transconductance TJ = –55_C 25_C gfs – Forward Transconductance (µS) 400 150_C 300 10 td(on) tf tr td(off) 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 1 10 50 RG – Gate Resistance ( W) 100 0 0 100 200 300 400 500 ID – Drain Current (mA) www.vishay.com 11-4 Document Number: 70219 S-04279—Rev. D, 16-Jul-01