VS-30PT100

VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A Base cathode 2 FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability TO-247AC modified 1 Cathode 3 Anode • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-247AC modified 30 A 100 V 0.64 V 15 mA at 125 °C 175 °C Single die 135 mJ • Designed and qualified according to JEDEC-JESD47 APPLICATIONS • High efficiency SMPS • Automotive • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 30 Apk, TJ = 125 °C (typical) Range CHARACTERISTICS VALUES 100 0.61 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-30PT100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 156 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse TJ = 25 °C, IAS = 3 A, L = 30 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 Following any rated load condition and with rated VRRM applied VALUES 30 2200 450 135 IAS at TJ max. mJ A A UNITS Revision: 10-Aug-11 Document Number: 94532 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors SYMBOL 30 A TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TYP. 1650 7.5 MAX. 0.77 0.9 0.64 0.76 200 15 10 000 μA mA pF nH V/μs V UNITS ELECTRICAL SPECIFICATIONS PARAMETER Forward voltage drop VFM (1) 60 A 30 A 60 A Reverse leakage current Junction capacitance Series inductance Maximum voltage rate of change IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified (JEDEC) SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 0.8 °C/W 0.25 6 0.21 6 (5) 12 (10) 30PT100 g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Marking device Revision: 10-Aug-11 Document Number: 94532 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors 100 175°C 150°C 125C 1 100°C 75°C 0.1 50°C 0.01 25°C 1000 Reverse Current - IR (mA) 10 Instantaneous Forward Current - IF (A) 100 Tj = 175°C 0.001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 Junction Capacitance - CT (pF) 10 Tj = 125°C 1000 Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 D = 0.75 0.1 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Aug-11 Document Number: 94532 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors 30 180 Allowable Case Temperature (°C) Average Power Loss - (Watts) 175 170 165 160 155 150 145 0 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Square wave (D=0.50) 80% rated Vr applied see note (1) 25 20 15 10 5 0 0 180° 120° 90° 60° 30° DC RMS Limit DC 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 10-Aug-11 Document Number: 94532 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors 1000 Avalanche Current (A) 100 Tj = 25°C Tj = 125°C 10 Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 1000 Avalanche Energy (mJ) 100 Tj = 25°C 10 Tj = 125°C Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 10-Aug-11 Document Number: 94532 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 1 2 3 4 5 - 30 2 P 3 T 4 100 5 Vishay Semiconductors product Current rating (30 A) Package: P = TO-247 (modified) T = Trench Voltage code (100 V) Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95253 www.vishay.com/doc?95255 www.vishay.com/doc?95232 Revision: 10-Aug-11 Document Number: 94532 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1