VSB3200-M3-73

VSB3200-M3-73

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VSB3200-M3-73 - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
VSB3200-M3-73 数据手册
New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 3.0 A 200 V 90 A 0.63 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range (1) SYMBOL VRRM IF(AV) IFSM dV/dt TJ, TSTG VSB3200 200 3.0 90 10 000 - 40 to + 150 UNIT V A A V/μs °C Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air Document Number: 89144 Revision: 27-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VSB3200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage (1) TEST CONDITIONS IR = 1.0 mA IF = 3.0 A TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR VF TYP. 200 (minimum) 0.86 0.63 1.6 IR CJ 1.2 175 MAX. 1.20 0.71 60 9 μA mA pF V UNIT Reverse current per diode (2) Typical juntion capacitance VR = 200 V 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) SYMBOL RθJA RθJL Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air VSB3200 62 °C/W 9 UNIT ORDERING INFORMATION (Example) PREFERRED P/N VSB3200-M3/54 VSB3200-M3/73 UNIT WEIGHT (g) 1.08 1.08 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.5 2.4 Resistive or Inductive Load D = 0.8 2.0 D = 0.3 D = 0.5 D = 0.2 1.6 D = 0.1 D = 1.0 Average Forward Rectified Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.375" (9.5 mm) Lead Length 0 0 25 50 75 100 125 150 175 Average Power Loss (W) 1.2 T 0.8 0.4 D = tp/T tp 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89144 Revision: 27-Sep-10 New Product VSB3200 Vishay General Semiconductor 10 1000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 1 TA = 125 °C Junction Capacitance (pF) TA = 100 °C 0.1 100 TA = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Lead TA = 150 °C 1 TA = 125 °C 0.1 TA = 100 °C 10 0.01 0.001 TA = 25 °C 20 30 40 50 60 70 80 90 100 0.0001 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 89144 Revision: 27-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
VSB3200-M3-73
### 物料型号 - 型号:VSB3200

### 器件简介 VSB3200是Vishay General Semiconductor生产的高压沟槽MOS隔离肖特基整流器,采用沟槽MOS肖特基技术,具有高效率操作和低正向电压降,低功耗损失的特点。

### 引脚分配 - Polarity: 色带表示阴极端。

### 参数特性 主要参数: - 最大重复峰值反向电压(VRRM):200V - 最大平均正向整流电流(IF(AV)):3.0A - 峰值正向浪涌电流(IFSM):90A - 电压变化率(dV/dt):10000 V/us - 工作结和存储温度范围(TJ,TSTG):-40至+150°C

电气特性(TA=25°C除非另有说明): - 击穿电压(VBR):V - 瞬时正向电压(VF):0.86V至1.20V - 每个二极管的反向电流(IR):1.6μA至60μA - 典型结电容(CJ):175pF

### 功能详解 VSB3200适用于高频整流开关电源、自由二极管、DC-DC转换器或极性保护应用。

### 应用信息 - 用于高频整流开关电源、自由轮二极管、DC-DC转换器或极性保护应用。

### 封装信息 - 封装:DO-201AD - 模塑化合物符合UL 94 V-0可燃性等级 - 基P/N-M3 - 无卤素和RoHS合规,商业级 - 端子:亚光锡镀层引线,可焊接,符合J-STD-002和JESD 22-B102 - M3后缀符合JESD 201 1A级须测试
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