VSB3200S

New Product VSB3200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. 3.0 A 200 V 50 A 0.64 V 150 °C • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Note (1) (1) SYMBOL VRRM IF(AV) IFSM dV/dt TJ, TSTG VSB3200S 200 3.0 50 10 000 - 40 to + 150 UNIT V A A V/µs °C Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length Document Number: 89143 Revision: 29-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VSB3200S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage (1) Reverse current per diode (2) Typical juntion capacitance Notes (1) (2) TEST CONDITIONS IR = 1.0 mA IF = 3.0 A VR = 200 V 4.0 V, 1 MHz TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR VF IR CJ TYP. 200 (minimum) 0.98 0.64 1.3 0.98 170 MAX. 1.40 0.72 50 7 - UNIT V µA mA pF Pulse test: 300 µs pulse width, 1 % duty cycle Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note (1) SYMBOL RθJA RθJL VSB3200S 64 18 UNIT °C/W Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N VSB3200S-M3/54 VSB3200S-M3/73 UNIT WEIGHT (g) 0.399 0.399 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 4000 2000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.5 2.4 Resistive or Inductive Load 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 175 14 mm x 14 mm Copper Pads 0.375" (9.5 mm) Lead Length 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 2.0 D = 0.3 D = 0.2 D = 0.1 D = 1.0 D = 0.5 Average Forward Rectified Current (A) D = 0.8 Average Power Loss (W) 1.6 1.2 T 0.8 0.4 D = tp/T tp Ambient Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89143 Revision: 29-Sep-10 New Product VSB3200S Vishay General Semiconductor 10 1000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) TA = 125 °C 1 Junction Capacitance (pF) 100 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 TA = 150 °C TA = 125 °C 0.1 100 1 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 0.01 0.001 TA = 25 °C 10 20 30 40 50 60 70 80 90 100 Junction to Ambient 1 0.01 0.1 1 10 100 0.0001 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 89143 Revision: 29-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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