VSIB480

New Product VSIB420 thru VSIB480 Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifier FEATURES • UL recognition file number E312394 (QQQX2) • Ideal for printed circuit boards • High surge current capability ~ ~ + Case Style GSIB-3S • High case dielectric strength of 1500 VRMS + ~ ~ - • Solder dip 260 °C, 40 s • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for monitor, TV, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. 4.0 A 200 V to 800 V 130 A 10 µA 0.95 V 150 °C MECHANICAL DATA Case: GSIB-3S Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100 °C TA = 25 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t TJ, TSTG VSIB420 200 140 200 VSIB440 400 280 400 4.0 (1) 2.3 (2) 130 70 - 55 to + 150 VSIB460 600 420 600 VSIB480 800 560 800 UNIT V V V A A A2 s °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Notes (1) (2) Unit case mounted on aluminum plate heatsink Units mounted on P.C.B. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length Document Number: 89119 Revision: 14-Jul-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product VSIB420 thru VSIB480 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode (1) Maximum reverse current per diode (2) Notes (1) (2) TEST CONDITIONS IF = 2.0 A TA = 25 °C TA = 25 °C TA = 125 °C SYMBOL VF VSIB420 VSIB440 0.95 10 250 VSIB460 VSIB480 UNIT V Rated VR IR µA Pulse test: 300 µs pulse width, 1 % duty cycle Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance Notes (1) (2) SYMBOL RθJA RθJC VSIB420 VSIB440 26 (2) 5 (1) VSIB460 VSIB480 UNIT °C/W Unit case mounted on aluminum plate heatsink Units mounted on P.C.B. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N VSIB460-E3/45 UNIT WEIGHT (g) 4.0 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Output Current (A) 4 150 Heatsink Mounting, TC 3 Peak Forward Surge Current (A) 125 100 75 50 25 0 2 P.C.B. Mounting, TA 1 1.0 Cycle 0 0 25 50 75 100 125 150 1 10 100 Case Temperature (°C) Figure 1. Derating Curve Output Rectified Current Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89119 Revision: 14-Jul-09 New Product VSIB420 thru VSIB480 Vishay General Semiconductor 100 1000 Instantaneous Forward Current (A) 10 TJ = 150 °C Junction Capacitance (pF) 100 1 TJ = 25 °C 10 0.1 TJ = 125 °C 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode TJ = 150 °C 100 TJ = 125 °C 10 Transient Thermal Impedance (°C/W) 90 Instantaneous Reverse Current (µA) 1000 100 10 1 1 0.1 TJ = 25 °C 0.01 20 30 40 50 60 70 80 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Per Diode t - Heating Time (s) Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GSIB-3S 0.996 (25.3) 0.972 (24.7) 0.189 (4.80) 0.173 (4.40) 0.150 (3.80) 0.134 (3.40) Ø 0.134 (3.40) Ø 0.122 (3.10) 0.382 (9.70) 0.366 (9.30) 0.114 (2.90) 0.098 (2.50) 0.602 (15.3) 0.579 (14.7) 0.157 (4.0) Ref. 0.057 (1.45) 0.041 (1.05) 0.075 (1.90) 0.059 (1.50) 0.083 (2.10) 0.067 (1.70) 0.043 (1.10) 0.035 (0.90) 0.146 (3.70) 0.130 (3.30) 0.709 (18.0) 0.669 (17.0) 0.031 (0.80) 0.024 (0.60) 0.303 (7.7) 0.287 (7.3) Document Number: 89119 Revision: 14-Jul-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1